pzt 中文意思是什麼

pzt 解釋
陶瓷片
  1. Properties of pzt piezoelectric ceramics modified by barium tong sten - cuprum

    3的壓電陶瓷的性能研究
  2. Advances of sol - gel derivation of pzt ferroelectric thin films

    鐵電薄膜新進展
  3. Effect of interface on properties of pzt ferroelectric thin films

    鐵電薄膜性能的影響
  4. The maximum of the piezoelectric constant d33 is 68pc / n when the volume fraction of pzt, pvdf, pan is 0. 55, 0. 45, and 0. 05 respectively. finally, when the n, a, p are 6, 0. 6, 0. 3 respectively, the calculation value can agree well with the experimental data

    而且經過理論計算與比較，當以下三個參量取下列值時，即陶瓷顆粒形狀因子n = 5 、極化率= 0 . 6 、結構因子q = 0 . 3時，實驗數據與理論計算吻合較好。
  5. So it can be used as both sensor component and driving component. pzt have better electromechanical coupling coefficient, piezoelectric constant, mechanical quality factor, curie temperature and stability, etc. so, pzt can be used widely in smart materials and structure

    與其它壓電陶瓷相比，鋯鈦酸壓電陶瓷（ pzt ）有較好的機電耦合系數、壓電常數、機械品質因數、居里溫度和穩定性等，因此， pzt能廣泛應用於智能材料結構中。
  6. But there is a main question that pvdf does not be in p phase with higher piezoelectric property, but be in other phases with lower or without piezoelectric property, thus, which can not improve distinctly piezoelectric constant d33, reduce notably dielectric spoilage ( tg5 ) and raise remarkably mechanical coupling factor ( kp ) of 0 - 3 pzt / pvdf piezoelectric composite, so these will restrict its development and application. in this paper, 0 - 3 pzt / pvdf piezoelectric composite will be prepared by room pressing - solidity, high - temperature - pressing and room - pressing techniques respectively

    由於這個壓電復合材料體系存在一個主要問題? pvdf在0 ? 3型pzt / pvdf壓電復合材料中通常不是以具有較強壓電性的相晶態形式呈現，多是以其它的相態存在，不能有效地提高0 ? 3型pzt / pvdf壓電復合材料的壓電常數d _ （ 33 ） 、降低介電損耗tg和增大機電耦合系數kp等壓電和介電性能，從而嚴重地制約它的發展和應用。
  7. 0xl0 - 2 c / cm2k respectively. and the sbn thin film can avoid plumbum pollution of pzt ferroelectric material

    而且， sbn在制備過程中能夠避免pzt等鐵電材料的鉛污染的問題。
  8. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  9. The disperse degree of the ceramic can greatly affect uniformity of the composite, which limit the poling voltage and affect the piezoelectricity. in this paper, the relationships among constitutes, microstructures, dielectric and piezoelectric properties were calculated by employing the banno unit cell mode ; pzt ceramic were synthesized by the hydrothermal method and the appropriate solution was selected according the adsorption of pvdf on the ceramic particle surface ; then, relationships between the disperse degree and the fabrication process were studied. base on these, the pzt / pvdf composites intermingled some pan were prepared and the microstructures were investigated

    論文首先利用bannounitcell模型，計算了pzt pvdf壓電復合材料的組成、結構、與其壓電和介電等性能之間的關系；針對壓電復合材料存在的均勻分散性差的缺點，選用水熱法制備的粒度均勻的pzt陶瓷粉末，並採用溶液混和法與聚合物pvdf進行分散復合，重點研究了不同工藝條件下陶瓷的均勻分散性及其與材料微觀結構之間的關系。
  10. In this paper, at the cut - in spot of beam active vibration control and use the pzt material as the drive component, the main research works can be summarized as follows : 1 ) using the finite element theory, a general finite element formulation of piezoelectric media is derived, the direct and converse piezoelectric effects are considered in the formulation

    本文從梁的振動主動控制研究為切入點，利用了pzt材料作為驅動元件，作了如下幾個方面的研究： 1 ）利用有限元理論，考慮壓電材料的正、逆壓電效應的影響，導出了機電耦合壓電元件的有限元方程。
  11. Using pro / e ansys fem software, based on results of analyzing fem model, the article discuss the influence to the eigenfrequency of the stator in different dimension parameters of the stator loop, different pzt thickness, the influence of tooth height along circumferential direction on eigenfrequency is analyzed. it offers a foundation for optimum design the structure of the stator. fem equivalent circuit model of the ultrasonic motor has been built

    利用pro / e 、 ansys等軟體建立了圓盤定子的有限元模型，通過有限元分析的方法，討論了定子圓盤各個徑向尺寸參數對特徵頻率的影響，不同壓電陶瓷厚度對定子特徵頻率的影響，以及定子齒的齒高的變化對特徵頻率的影響，為馬達結構參數的優化設計提供了依據。
  12. The pzt ferroelectric films " fatigue characteristics were studied, and here the electrical load was produced by rt6000s ; it was known that with the voltage increasing or frequency reducing, the degree of ferroelectric fatigue decay would increase

    然後用rt6000s測試儀加載電載荷，總結得出pzt薄膜的鐵電疲勞規律，即加載電壓增加或加載頻率降低時，鐵電極化衰減程度變大。
  13. The preparation of pzt ferroelectric thin films and its application in pyroelectric ir sensor

    鋯鈦酸鉛鐵電薄膜的制備及在紅外探測器中的應用
  14. To achieve accurate detection of surface potential, the measurement of the contact potential difference of the zno / si step was also carried out. polarization - related surface properties of ferroelectric thin films were investigated by kelvin probe force microscopy ( kpfm ), leading to the discovery of asymmetric charge writing on the surface of pb ( zr _ ( 0. 55 ) ti _ ( 0. 45 ) ) o _ 3 ( pzt ) thin film

    為了優化儀器的檢測靈敏度和穩定性，選用氧化鋅薄膜上的zno / si臺階作為測試對象，檢測了zno / si的接觸電勢差;通過改變儀器系統參數，發現針尖-樣品距離和掃描速度對接觸電勢差的檢測結果影響顯著。
  15. Study on the piezoelectric properties of pzt pvdf piezoelectric composite

    壓電復合材料壓電性能研究
  16. Study on electric properties of modified pzt ceramics

    陶瓷的電學性能研究
  17. 3 in experiment the common electrical - resistance strain gages is used as receiver to replace the pzt or velocity and acceleration transducer which is frequently used in pipeline not

    3 、實驗採用動態電阻應變電測法，採用普通的電阻應變片作為接收傳感器，代替了通常用於管道檢測的壓電探頭或樁基完整性檢測的反射波法中使用的速度傳感器或加速度傳感器。
  18. We build a close vibration compensation system which can successfully achieve the measurement of interference fringes movement and - vibration compensation. it puts forward pre - setting fill - in pulses method to implement phase shifting with the same pzt. with this new method, the interference fringe can be stabilized at any pre - setting phase position

    提出了填充脈沖數預設定的方法，可以將干涉條紋鎖定在任意設定的位相位置，實現了用pzt同時實現振動補償和移相測量；深入分析討論了pzt的延遲問題，創造性地提出了用多次逼近補償的辦法，給出了反饋補償的演算法，解決了補償過程中存在的系統不穩定和過補償的問題。
  19. After the characteristic of piczoelectric ceramic ( pzt ) was analyzed, pzt micro - positioning system was modeling and logical controller rule were used in this control system

    摘要在分析壓電陶瓷特性基礎上，建立了壓電陶瓷微定位系統的模型，並將邏輯規則控制器應用於其控制系統中。
  20. In our experiment, the structure of the pzt thin film sample is pt / pzt / ybco / lao. lao is the substrate

    本文基於前人的實驗理論，率先研究了鋯鈦比為94 6的鋯鈦酸鉛薄膜的性能。
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