quantum emission 中文意思是什麼

quantum emission 解釋
量子發射
  • quantum : n. （pl. -ta ）1. 量，額；定量，定額；份；總量。2. 【物理學】量子。
  • emission : n. 1. （光、熱、氣體等的）發出，發射，射出，放射；傳播。2. （紙幣等的）發行；發行額。3. 發出物，放射物。4. 【醫學】排出；遺精。
  1. Emission spectrum of two two - level atoms driven by a quantum field

    由量子場驅動的雙原子發射譜
  2. Influence of quantum interference on profile of atomic sodium emission spectrum

    量子干涉效應對鈉原子光譜線型的影響
  3. The activation effect of zn2 + modification, including enhancement of emission intensity, slowing of luminescence decay and increasing of quantum yields, results from the formation of zns shell outside the nanoparticles, which is passivating the surface of nanoparticles, eliminating the surface quenching centers, so as to block the nonradiative transition pathways through these kind of quenching centers

    Zn ~ （ 2 + ）表面修飾在納米顆粒表面形成了zns殼層，鈍化了納米顆粒的表面，消除了表面猝滅中心，阻塞了通過表面猝滅中心進行無輻射躍遷的通道，從而使得發光強度增加，衰減變慢，量子效率提高。
  4. Atomic emission spectrum and phase properties of the field in some atom - field coupling systems are investigated. effects of quantum interference between two different transition pathways on atomic emission spectrum and phase properties of the field are discussed

    本文研究了光場與原子相互作用系統中原子的發射譜和光場的相位性質，討論了原子不同躍遷通道間的量子干涉對原子發射譜和光場相位性質的影響。
  5. Abstract : we have studied the spontaneous emission from a three - level atom with an external - driving field in a photonic crystal. as a result of quantum interference and photon localization, the population in the two upper levels displays quasi - oscillatory oroscillatory behavior. this depends on the initial atomic state and the relative positions of the two upper levels from the forbidden gap. the intensity and the phase of the external field can affect spontaneous emission from the atom. the properties are different from a three - level atom either in vacuum or in aphotonic crystal without an external driving field

    文摘:討論了在雙光子驅動場作用下，三能級原子在光子晶體中的自發發射問題.由於量子干涉和光的局域化作用，兩個上能級中的占據數將具有周期振蕩或準周期振蕩的性質，這不僅依賴于兩個上能級與禁帶的相對位置，同時也依賴于原子的初始狀態，而且還與驅動場的強度、驅動場的入射位相有關.這些性質既與真空中帶有驅動場的原子的自發發射性質不同，也有別于無驅動場作用下光子晶體中三能級原子的自發發射性質
  6. Then some cavity quantum electro - dynamic ( cqed ) effects are studied by experiment. the photoluminescence ( pl ) intensity enhancement at resonance wavelength and suppression at off - resonance wavelength, emission spectrum narrowing as well as emission intensity redistribution in space are observed in the microcavity device fabricated with distributed bragg reflector ( dbr ) and silver mirror as well as that done with two silver mirrors

    分別在帶有dbr結構的平面微腔及全金屬鏡構成的平面微腔中觀察到了諧振模式處的輻射增強及非諧振模式處的輻射抑制，發射譜線窄化以及輻射強度空間分佈重組等腔量子電動力學現象。
  7. Laser diodes : feedback and stimulated emission. cavity design ; double heterostructure concept. quantum well, wire, dot active regions. strained layers ; pseudomorphic active regions

    回饋與受激放射。共振腔設計，雙異質結構之概念，量子井、量子線與量子點之主動層。應變層，假晶材料之主動層。
  8. By calculating the feynman diagram in rtf, we find that when taking into account both the thermal photon emission, absorption and the virtual photon exchange processes, the infrared divergences at zero and finite temperature can be cancelled at the same time. the full quantum calculation results for soft photon radiation coincide completely with the poisson distribution obtained in the semiclassical approximation ( the coupling of the classical current and quantized field )

    通過實時溫度場論下的費曼圖計算，我們得到：將實光子的發射、吸收，虛光子的交換過程同時考慮時，零溫場論中出現的和由溫度效應引起的紅外發散都能得到消除；並且完全量子場論下的軟光子輻射幾率與半經典近似下（經典的電流和量子化的電磁場之間的耦合）得到的泊松分佈結果完全一致。
  9. The size of the zno nanocrystal grain was so little that the quantum confinement effect should be considered. that makes the band gap wide. atom transfer rate is affected by the substrate temperature, and the average size of the zno nano crystal grain increases with the increasing substrate temperature resulting in the red shift of pl emission position and the narrowness of pl fwhm

    低溫生長的氧化鋅晶粒小，考慮到量子限制效應，禁帶寬較大；襯底溫度影響吸附原子遷移能力，隨著溫度升高，晶粒的尺寸增大，分佈變的均勻，因而發光峰位隨著襯底溫度的升高而紅移，發光的半高寬變小。
  10. Abstract : based on the enhanced effect of spontaneous emission in cavity quantum electrodynamics, the microcavity effect of vertical cavity surface emitting lasers ( vcsels ) is analyzed, and the results obtained in ordinary open cavities and in three - dimensional closed cavities are compared

    文摘:依據腔量子電動力學中自發輻射增強效應，分析了垂直腔面發射半導體激光器的微腔效應，比較了普通開腔和三維封閉腔中的結果。
  11. Low dimensional ii - vi semiconductor structure is one of ideal material for exciton nonlinear optical devices at room - temperature and greem - blue emission devices due to it ' s large exciton binding energy and strong room - temperature exciton effect. thus the excitonic effects in ii - vi semiconductor quantum wells and asymmetric double quantum wells have been studied deeply and widely

    特別是-族半導體低維結構由於較大的激子束縛能和強的室溫激子效應，使它有希望成為制備室溫激子非線性器件和藍綠光器件的理想候選材料之一，為此-族半導體量子阱和非對稱雙量子阱的激子效應已被很深入地研究。
  12. Many novel physical phenomena such as coherent population trapping, lasing without inversion, electromagnetically induced transparency as well as spontaneous emission cancellation and enhancement based on quantum interference have been discovered

    基於量子干涉效應，產生了許多新的物理現象和效應，如相干布居捕獲、無反轉激光、電磁感應透明和自發輻射相消等。
  13. In 1987, a remarkable step was made by yablonovitch, who pointed out the possibility of the realization of photonic bandgaps, localized defect modes, and their applications to various optoelectronic devices, and by john who dicussed the strong localization of electromagnetic waves in disordered photonic crystals and also predicted many interesting quantum optical phenomena that can be realized in photonic crystals such as the bound state of photons and non - exponential decay of spontaneous emission

    1987年yablonovitch和john開創性地提出光子晶體這一新概念， yablonovitch指出了有可能實現光子頻率帶隙和局域缺陷模以及許多光電技術方面的應用， john則討論了在無序光子晶體中電磁波的強烈局域現象，並預言在光子晶體中存在許多有趣的量子光學現象，諸如光子局域態、自發輻射的非指數衰減。
  14. For being with many advantages, it has been an active subject in recent years and much progress has been made. on the basic of analysis of many kinds of led structures, a new kind of strained layer structure has been introduced into our designed hb - led which has been manufactured in our laboratory to demonstrate a even higher efficient light emission. through calculation of led external quantum efficiency, a method for design hb - led top layer was evaluated

    本論文分析了當前國內外各種led的結構及其製作工藝，在技術上較為成熟的雙異質結構基礎上，我們在器件的有源區引入應變多量子阱結構，並根據實際需求增加補償應變技術以保證發光層結構的穩定性；通過對器件外量子效率的計算，使得在器件設計有了定量的理論分析依據；並採用先進的渦輪lp - mocvd成功制備出galnp gaalinp應變多量子阱高亮度發光二極體器件。
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