radio frequency sputtering 中文意思是什麼

radio frequency sputtering 解釋
射頻濺射
  • radio : n. 1. 無線電訊[電報，電話]；無線電，射電。2. 無線電廣播；無線電（廣播）臺。3. 收音機。vt. ,vi. 用無線電傳送[廣播]；（向…）作無線電廣播[傳送]；用X射線拍照；用鐳醫治。
  • frequency : n. 1. 屢次，頻仍，頻繁。2. （脈搏等的）次數，出現率；頻度；【物理學】頻率，周率。
  • sputtering : 飛濺
  1. Zno thin films were deposited on silicon ( si ) and glass substrate by reactive radio frequency sputtering ( rf ) technique with zinc target in the mixed gas of ar ando2, and used zno buffer improving the quality of zno thin film. the effects of parameters on the thickness, composition, texture, morphology, optical properties and electrical properties of zno thin films had been systematically investigated by means of xrd, xps, sem, afm, pl and hall test system

    採用x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、掃描電子顯微鏡（ sem ） 、原子力顯微鏡（ afm ） ，光致發光譜（ pl ）和霍爾效應測試技術系統研究了濺射工藝和退火工藝對zno薄膜的厚度、成分、織構、表面形貌、光學性能和電學性能的影響規律。
  2. Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system, with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )

    使用射頻濺射（ rf ）系統，靶材為燒結的六角氮化硼（ hbn ） ，工作氣體為氬氣（或氬氣和氮氣的混合氣） ，在硅襯底上沉積氮化硼薄膜。
  3. Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process. the films were characterized by fourier transform infrared ( ftir ) spectroscopy. the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step. the absorption coefficient was calculated from te ( ) and re ( ). the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg

    本文還研究了立方相含量與光學帶隙的關系，在n型si （ 111 ）片和熔融石英片上沉積出不同體積分數的立方氮化硼薄膜，薄膜的成分由傅立葉紅外吸收譜標識；用紫外-可見分光光度計測量了沉積在石英片上的bn薄膜的透射光譜te （ ）和反射光譜re （ ） ，薄膜的厚度用臺階儀測得。
  4. In this paper, fluorocarbon films are deposited on polyetylene terephalate ( pet ) substrate by radio frequency magnetron sputtering polytetrefluoroethylene ( ptfe ) targets to examine the effect of discharge condition on the properties and mechanism of deposited films. the effect of the power, pressure and treating time on morphology is observed by means of scanning electron microscopy ( sem ) and atom force microscopy ( afm ). it is found that the fluorocarbon film particles distribute more uniform and join tightly with increasing power, the surfaces of films become closer and denser as pressure increases

    利用掃描電鏡（ sem ）和原子力顯微鏡（ afm ）研究了成膜機理以及cf膜的表面形貌，觀察了不同功率、壓力和時間下對氟碳膜表面形貌的影響，系統研究了氟碳膜表面結構隨功率和壓力的變化規律，發現功率提高使得氟碳膜顆粒分佈均勻，結合更加緊密，而提高壓力，氟碳膜的顆粒更加密集，並且濺射條件不同，粒子的形態、粒子間構成的介觀結構也不相同。
  5. The application of radio frequency magneto - controlled sputtering was introduced briefly. in this research, multiferroelectric magnetoelectric lcmto with excellect crystal and electric properties which keeps substitution each other between la and ca as well as mn and ti were prepared by traditional ceramic process, and the film was prepared by radiofrequency magneto - controlled sputtering

    本研究中採用傳統的陶瓷燒結方法及射頻磁控濺射技術成功制備了具有優良結晶性能和電性能的la 、 ca和mn 、 ti離子共摻的lcmto復鐵電性的磁電子材料及薄膜。
  6. In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased

    Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。
  7. The designed films of sio2 and sio2 / si are prepared on sample and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering method

    利用射頻磁控反應濺射法，在藍寶石試片和半球形頭罩上制備出所設計的sio _ 2和sio _ 2 si增透膜系。
  8. Sic film was coated on the surface of 316l stainless steel by substrate bias - assisted radio frequency ( rf ) sputtering as tritium permeation barrier ( tpb ) of first wall and blanket in fusion reactor

    採用分步偏壓輔助射頻（ rf ）濺射法在316l不銹鋼表面制備了sic薄膜。掃描電鏡（ sem ）觀察表明膜緻密、均勻、與基體結合牢固。
  9. The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter

    使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。
  10. Preparation of high quality cubic boron nitride film by radio frequency magnetron sputtering and its characterization

    高質量立方氮化硼薄膜的射頻磁控濺射制備及其性能表徵
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