resist mask 中文意思是什麼

resist mask 解釋
抗蝕劑掩模
  • resist : vt 1 抵抗,反抗,抗拒,敵對,抵禦,阻止,擊退(敵人、侵略等);妨礙,阻礙。2 忍耐(艱苦等);抵制...
  • mask : n 1 假面具,偽裝,掩蔽物;面罩;防毒面具(= gas mask);【物理學】掩模;(劈劍,棒球等用)護面;...
  1. Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool, reticule, resist exposure, development and etching, they are beneficial to develop a yield - driven layout design tool, the engineers could use it to automate the tasks of advanced mask design, verification and inspection in deep sub - micron semiconductor manufacturing

    建立準確描述由於掩模製造工藝、光刻膠曝光、顯影、蝕刻所引起的光學鄰近效應和畸變所導致的關鍵尺寸變化的光刻工藝模型,有助於開發由成品率驅動的版圖設計工具,自動地實現深亞微米下半導體製造中先進的掩模設計、驗證和檢查等任務。
  2. An image of the patterns on the mask is projected onto the resist-coated wafer, which is many centimeters away.

    掩膜板上圖形的像被投影到許多厘米以外的塗有抗蝕劑的片子上。
  3. The principle, theory, realizing methods for holographic lithography as well as the pattern transfer mechanism among the traditional photomask - hologram mask - resist have been deeply investigated. an experimental system with total inner reflection wavefront conjugation holographic lithography using right angle prism and refractive index matching liquid is designed and built, and the experimental research is carried out

    對全息光刻的原理、理論、實現方法及傳統光掩模?全息掩模?抗蝕劑圖形傳遞機理進行了深入的研究,設計和建立了採用直角棱鏡和折射率匹配液的全內反射波前共軛全息光刻實驗系統,進行了實驗研究。
  4. The impact of the effective resist diffusion length to the exposure latitude and mef ( mask error factor ) for the 0. 13 m photolithography and beyond is presented

    展示了在0 . 13 m及以下工藝中等效擴散對能量裕度和掩模版誤差因子的影響的研究結果。
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