reverse blocking 中文意思是什麼

reverse blocking 解釋
反向阻斷
  • reverse : vt 1 使顛倒，使倒轉，使反轉；使翻轉；翻（案）。2 掉換，交換。3 使成正相反的東西，完全改變。4 【機...
  • blocking : 閉塞
  1. Detail specifications for reverse blocking triode thyristors

    反向鎖閉可控硅三極體詳細規范
  2. Semiconductor devices ; discrete devices ; part 6 : thyristors : section 3 : blank detail specification for reverse blocking triode thyristors, ambient and case - rated, for currents greater than 100 a

    半導體器件.分立器件.第6部分:晶體閘流管.第3節:電流在100a以下的額定環境和外殼的反向阻擋三極閘流晶體管的空白詳細規范
  3. Semiconductor devices. discrete devices. part 6 : thyristors. section one - blank detail specification for reverse blocking triode thyristors, ambient or case - rated, up to 100a

    半導體器件分立器件第6部分:閘流晶體管第一篇100a以下環境或管殼額定反向阻斷三極閘流晶體管空白詳細規范
  4. Semiconductor devices ; discrete devices ; part 6 : thyristors ; section one : blank detail specification for reverse blocking triode thyristors, ambient and case - rated, up to 100 a

    半導體器件.分立器件.第6部分:晶閘管.第1節:電流在100a以下的額定環境和外殼的反向阻斷三極閘流晶體管的空白詳細規范
  5. Semiconductor devices - discrete devices - part 6 : thyristors - section three - blank detail specification for reverse blocking triode thyristors, ambient and case - rated, for currents greater than 100a

    半導體器件分立器件第6部分：晶閘管第三篇電流大於100a環境和管殼額定的反向阻斷三極晶閘管空白詳細規范
  6. Specification for harmonized system of quality assessment for electronic components - blank detail specification : reverse blocking triode thyristors, ambient and case - rated, for currents greater than 100 a

    電子元器件質量評估協調體系規范.空白詳細規范:電流大於100a的環境溫度額定和外殼溫度限定反向閉鎖三級半導體閘流晶體管
  7. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - reverse blocking triode thyristors, ambient and case - rated, up to 100 a

    電子元器件質量評估的協調體系.半導體分立器件.空白詳細規范.環境溫度額定和外殼溫度額定電流達100a的反向閉塞三極半導體閘流管
  8. In view of the very small leakage currents in the blocking state ( reverse bias ) and the small voltage in the conducting state ( forward bias ) as compared to the operating voltage and currents of the circuit in which the diode is used, the i - v characteristics for the diode can be idealized

    與二極體的工作電流和電壓相比，在阻斷（截止）狀態下漏電流很小，在導通狀態下電壓比較小，因此二極體的電流-電壓（伏安）特性可以理想化。
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