rf sputtering 中文意思是什麼

rf sputtering 解釋
射頻濺射
  • rf : 1 radio frequency 射頻，無線電頻率。2 range finder 【攝，軍】（測定目標距離的）測距計，光學測距儀...
  • sputtering : 飛濺
  1. The 3d electrons increased with the content of mn doping increasing, and the electrical property increased accordingly as the electron transport path improved. it is confirmed that all the orthorhombic perovskite phase which is formed initially at the heat treatment temperature of about 600c and thoroughly above 850c are observed in the lcmto thin film deposited on si ( 100 ) substrate by rf magneto - controlled sputtering

    確認了採用射頻磁控濺射法于si （ 100 ）基板上生長的薄膜至多在600熱處理已開始形成晶相，形成的晶相全部是正交晶系鈣欽礦相，提高熱處理溫度，薄膜中晶相含量相對增大，高於850后晶相基本形成完畢。
  2. We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem

    論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。
  3. Ge - sio2thin films were prepared by an rf co - sputtering technique on p - si substrates from a ge - sio2 composite target. the as - deposited films were annealed in the temperature range of 300 - 1000 under nitrogen ambience. the structure of films was evaluated by x - ray diffraction ( xrd ), x - ray photoernission spectroscopy ( xps )

    當溫度較低時（沉積時的基片溫度ts 450 ，后處理退火溫度ta 800時，制備的樣品均為非晶結構，當溫度較高時（ ts 450 ， ta 800 ）薄膜樣品中才出現si的結晶顆粒。
  4. All my samples with good orientation are prepared by rf sputtering. then we invest surface morphology and crystal structure, optical and electrical properties of zno films by afm, xrd, hall testing, ultraviolet - visible spectrum photometer and xps et al. zno films are fabricated on gaas substrate

    本文用射頻反應磁控濺射制備了高度c軸擇優取向的zno薄膜，採用原子力顯微鏡（ afm ） 、 x射線（ xrd ） 、 hall測試儀、紫外?可見分光光度計和x光電子能譜等分析測試手段，研究了樣品的表面形貌、晶體結構、光學和電學性能等。
  5. Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system, with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )

    使用射頻濺射（ rf ）系統，靶材為燒結的六角氮化硼（ hbn ） ，工作氣體為氬氣（或氬氣和氮氣的混合氣） ，在硅襯底上沉積氮化硼薄膜。
  6. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  7. Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process. the films were characterized by fourier transform infrared ( ftir ) spectroscopy. the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step. the absorption coefficient was calculated from te ( ) and re ( ). the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg

    本文還研究了立方相含量與光學帶隙的關系，在n型si （ 111 ）片和熔融石英片上沉積出不同體積分數的立方氮化硼薄膜，薄膜的成分由傅立葉紅外吸收譜標識；用紫外-可見分光光度計測量了沉積在石英片上的bn薄膜的透射光譜te （ ）和反射光譜re （ ） ，薄膜的厚度用臺階儀測得。
  8. 2 for the first time, rf sputtering method and vapor doping method have been combined to prepare n type bn films. bn films doped with s are n type conductivity

    摻s后的氮化硼薄膜表現出n型導電，未摻雜的氮化硼薄膜的電阻率1 . 8 1011 cm ，摻雜后的氮化硼薄膜的電阻率為7 . 3 107 cm 。
  9. In this article, by rf sputtering the licoo _ 2 film was produced. by hot pressing and cold pressing ( and sintering ), the licoo _ 2 targets used in the rf sputtering were produced differently. both technics of the preparation of the licoo _ 2 film and the licoo _ 2 target were studied

    本文使用熱壓燒結方法和冷壓后燒結方法制備了磁控濺射用的licoo _ 2靶材，並使用磁控濺射方法制備了licoo _ 2薄膜，對兩者的制備工藝進行了研究。
  10. While adding 1 % binder the preferable target was produced, and the density was 4. 89g. cm - 3, which was 88 % of the theoretic density of the licoo _ 2 with ar as the sputtering gas, the technics of rf sputtering to produce the licoo _ 2 film were studied systematically

    在冷壓燒結方法制備licoo _ 2靶材的過程中，燒結前添加了不同量粘結劑，就綜合純度和粘結性能兩方面考慮，加入1 %的粘結劑較為理想。所制備的licoo _ 2靶材密度為4 . 89g / cm3 ，達到licoo _ 2理論密度的88 % 。
  11. Sic film was coated on the surface of 316l stainless steel by substrate bias - assisted radio frequency ( rf ) sputtering as tritium permeation barrier ( tpb ) of first wall and blanket in fusion reactor

    採用分步偏壓輔助射頻（ rf ）濺射法在316l不銹鋼表面制備了sic薄膜。掃描電鏡（ sem ）觀察表明膜緻密、均勻、與基體結合牢固。
  12. Cdte films deposited by close space sublimation have better appearance and larger grain than the films deposited by rf - sputtering and vacuum thermal evaporation

    近距離升華法制備的cdte薄膜與射頻濺射和真空蒸發相比，具有其獨有的特性。
  13. The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter

    使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。
  14. The static recording by sil system is performed on phase - change medium, and the recorded line width is thinner by the factor of 1. 44 than the recording width without sil system. the properties of sb layer super resolution near - field structure is also studied. the sin / sb / sin film structure is deposited on substrate of k9 glass by rf sputtering technology

    Sil飛行頭系統與光數據存儲光學頭實驗系統相結合，在相變記錄介質上得到了0 . 45 m的靜態記錄線寬，該結果與非sil存儲系統的記錄線寬（ 0 . 65 m ）相比壓縮了1 . 44倍。
  15. Through comparing above results with those of thin films fabricated by rf - sputtering technology, it is indicated that h has almost no influence on the pl properties of films, but different preparation methods of thin films will result in quite different pl properties

    通過與濺射法制備薄膜的結果對比表明：熒光特性不受薄膜中氫含量的影響，但不同方法制備薄膜的熒光特性具有較大差別。
  16. In the films prepared by rf - sputtering, two new green pl bands, which strengthened with the increase of n content in the thin film, were observed except those pl bands corresponding to the result of pecvd. moreover, the intensity of every pl band is strongly affected by the ts

    在濺射法制備的薄膜中，除汕頭大學碩士學位論文相應的熒光發射帶外，在綠光部分出現了兩個較強的新帶，其強度隨薄膜氮含量增加而升高，而且各帶的熒光強度嚴重地受沉積時基片溫度的影響。
  17. Meanwhile, there are some changes in the experimental process compared with rf sputtering without magnetic field

    與此同時，沉積薄膜的過程中發生了明顯變化。
  18. The study on ce02 - ti02 films can supply a theory and experiment guidance for making ce02 - ti02 coating on glasses by rf sputtering

    本論文的研究為磁控濺射法制備ceo _ 2 - tio _ 2薄膜提供了一定的理論和實踐依據。
  19. The influence of thickness, kinds of rf sputtering gas, flux of gas, and gas pressure to the produced licoo _ 2 film was studied, which affected the preferable orientation of the crystal

    研究了厚度、濺射氣氛、氣體流量、氣壓值等對制備licoo _ 2薄膜中晶體生長擇優取向的影響。
  20. By comparing the xrd charts of licoo _ 2 films produced with different ratio of ar / o2, the preferable ratio was determined, which was 3 / 1. with ar / o _ 2 ( 3 / 1 ) as the sputtering gas, the technics of rf sputtering to produce the licoo _ 2 film were studied systematically. the best conditions to produce the licoo _ 2 film were that the power of rf sputtering was 75w, the flux of ar / o2 was 28sccm, and the pressure was 15mtorr

    通過對不同ar 、 o2混合氣的比率濺射得到的樣品xrd譜圖比較，確定了濺射licoo _ 2薄膜時的最佳ar / o2配比，並通過正交實驗確定了濺射氣氛為ar / o2混合氣且配比為3 / 1時濺射licoo _ 2薄膜的最佳工藝條件:濺射功率為75w 、氣體流量為28sccm 、氣壓值為15mtorr 。
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