room temperature stability 中文意思是什麼

room temperature stability 解釋
室溫穩定性
  • room : n 1 室，房間。2 場所，席位，位置，地位，空間。3 餘地，餘裕；機會。4 〈pl 〉一套房間；寄宿舍；出租...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • stability : n. 1. 穩定，穩定性，穩度。2. （船等的）復原力。3. 鞏固；堅定，持久不變。
  1. Because of its high theoretical capacity ( 170 mah ? g ~ ( - 1 ) ), and feasible voltage ( about 3. 5v versus li ~ + / li ), good stability both at room temperature and high temperature, and being environmental benign and inexpensive, lifepo4 is very hopeful material as positive electrode materials for the future lithium - ion batteries material

    磷酸鐵鋰（ lifepo _ 4 ）因其具有高的理論比容量（ 170mah ? g ~ （ - 1 ） ） ，約為3 . 5v的電壓，較好的常溫和高溫穩定性，低廉的成本和優良的環保性能，成為下一代鋰離子電池最有前途的正極材料。
  2. The smaller the ratio of nh3 / teos is more helpful for the synthesis of samples. the contraction from calcination of samples obtained in eda medium is proporational to the ratio of eda / teos at room temperature. the samples obtained in mixed basic media ( naoh / tea ) have thicker wall and more thermal stability than in naoh medium, but pore size is smaller correspondingly

    氨水介質中， nh _ 2 teos值在（ 8 ， 25 ）之間越小，越有利於mcm - 41的室溫合成；室溫條件下eda介質中得到樣品的燒成收縮量與eda teos的值成正比;與naoh介質相比，混合介質（ na0h三乙醇胺）中水熱合成的樣品具有較厚的孔壁，有著更好的水熱穩定性，但同時孔徑相應較小。
  3. The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2. we studied different surface progress. comparable with conventional method, the surface with nh4f cleaning step have superior thermal stability with hfo2, nh4f cleaning step is introduced can reduces leakage current and eot ; 3

    柵泄漏電流的減小可歸于氧空位缺陷的減小，即高的濺射氧氣氛和氧氣氛退火有助於減小hfo _ 2柵介質中的氧空位缺陷； 4 ）研究了反應濺射制備的hfo _ 2柵介質漏電流機制及其silc效應。
  4. Standard test method for assessing the current - voltage cycling stability at room temperature of absorptive electrochromic coatings on sealed insulating glass units

    密封絕緣玻璃裝置有吸收力的電致變色覆層在室溫下的電流-電壓循環穩定性評估的標準試驗方法
  5. Ohmic contacts on h2 - thermally - treated 6h - sic surface by evaporating aluminum without annealing have contact resistances of 8 10 - 3 - cm2 on room temperature and keep fairly good thermal stability under the temperature of 400. its ohmic properties do n ' t depend on the doping concentrations of the substrate, which enables us to form ohmic contacts on low dropped substrate especially on epitaxial layer

    通過氫氣處理6h - sic表面並鍍鋁后直接形成的歐姆接觸室溫比電阻率達到8 10 ~ （ - 3 ） ? cm ~ 2 ，溫度不超過400時該接觸具有較好的穩定性，其歐姆特性不依賴于襯底的摻雜濃度，是一種適宜在低摻雜襯底特別是sic外延片上制備歐姆接觸的有效方法。
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