second-induced breakdown 中文意思是什麼
second-induced breakdown
解釋
(半導體器件)二次擊穿-
The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping
首先注入的熱電子在超薄柵氧化層中產生陷阱中心,然後空穴陷入陷阱導致超薄柵氧擊穿。
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