secondary emission electron 中文意思是什麼
secondary emission electron
解釋
二次發射電子-
This project which is based on the demand of increasing the electron tube ’ s qualities totally and reducing the manufacture cost has done a large amount of investigative work as follows to improve and perfect the technologies for the important part of electron tube manufacture ? the grid surface processing : on the surface processing of the molybdenum grid, the primary purpose is to reduce thermionic emission and secondary electronic emission of the grid. by the constantly experiment and grabbling the different technology routes, we have successfully developed these new technologies on the tac and zrc electrophoresis and electroplating platinum black of the grid, and made its surface cladding quality very stable and reliable
本課題是基於整體提高電子管的質量和降低生產成本的要求，對電子管生產中的重要部分? ?柵極的表面處理技術進行改進和完善，主要在以下方面進行了深入研究:在鉬柵極表面處理方面，主要為實現降低柵極的熱電子發射和二次電子發射，通過不同工藝路線的不斷試驗和摸索，成功開發出柵極電泳tac 、 zrc和電鍍鉑黑的新工藝，使柵極的塗覆質量穩定可靠。 -
In this paper based on the theory of the low energy electrons, the movement of the irons in the counter is analyzed. the theories of sputtering and secondary electron emission are discussed respectively. the irons " action and effect on the counter are putted forward
本文從低能電子發射機理入手，分析了計數管內部離子運動情況，討論了離子濺射和二次電子發射，提出了離子與計數管內壁相互作用及其對計數管的影響，給出了計數管內壁表面處理模擬圖。 -
The numerical computing methods of the equations involving the static electric - magnetic field, electronic motion in the static electric - magnetic field, and so on are detailed. the methods of the boundary disposal are introduced. the phenomenon of secondary electron emission has also been studied
介紹了數值計算方法，包括靜電磁場的數值計算、在靜電靜磁場中電子運動軌跡的數值計算、空間電荷密度的數值計算和空間電位分佈的數值計算;介紹了邊界處理方法。 -
Multiplication effect of the secondary emission microwave electron gun
二次發射微波電子槍的倍增特性 -
An electrode used in certain electron tubes to provide secondary emission
中間極，二次發射電極一種用於一定電子管作第二次發射電極 -
The dust charging associated with the electron beams including the secondary emission of dust can dominate the dust surface potential in the close cathode region. in this case, dust of the same size can levitate at two different positions in the cathode
另外還發現：在考慮極板有強電子束發射和塵埃粒子本身的二次電子發射時，同一大小的塵埃粒子能夠懸浮在鞘層中兩個不同的位置。 -
A new model for the growth stage of surface flashover has been developed according to the experimental results, which is based on the solid band theory. it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization, the other is the micro - discharge caused by the trap centers of insulator. the trap cente
電子倍增的過程與材料的表面態直接相關，材料微觀結構的變化和材料的表面處理都能夠導致材料表面態的變化，引起材料的表面二次電子發射系數以及材料中陷階密度和分佈的改變，從而影響了電子倍增的過程，並進一步改變或影響了沿面閃絡的發展過程。 -
The factors which influenced the process include the insulator ' s material, structure, the distribution of space electrical field, the way to deal with the surface, the characteristic of voltage waveform, pulse width etc. there are two kinds of theory for the vacuum surface flashover : secondary electron emission avalanche ( seea ) and electron triggered polarization relaxation ( etpr )
影響該過程的因素包括絕緣材料結構、空間電場分佈、表面處理方法、所加電壓特徵，脈沖寬度等。研究真空表面閃絡過程有兩類理論：二次電子發射崩潰（ seea ）和電子引發極化鬆弛（ etpr ） 。 -
Based on the comparison and analysis of the secondary electron emission coefficient of two kinds of emitter gaas in theory, it is concluded that when primary electron energy is lower the deviation of secondary electron emission coefficient of two kinds of emitter gaas will become smaller, while when primary electron energy is higher the deviation will increase
通過對兩種負電子親和勢二次電子發射材料的二次電子發射系數的理論值進行比較和分析，得出：當原電子入射能量較低時，兩種材料的二次電子發射系數差值較小；當原電子入射能量較高時，兩種材料的二次電子發射系數差值較大，而且隨著原電子入射能量的升高，兩種材料的二次電子發射系數差值也在增大。 -
According to secondary electron emission avalanche ( seea ) theory, the effects of insulating materials, shapes, electrode structures of vacuum insulator on surface flashover and its mechanism, design optimization methods for vacuum insulator to improve surface flashover voltage by selecting insulating material, shape and electrode structure are reviewed
摘要根據二次電子發射崩（ seea ）理論，綜述了真空絕緣子的絕緣介質材料、幾何形狀和電極結構對絕緣子沿面閃絡的影響和機理過程，以及從這三方面優化設計真空絕緣子以提高其沿面閃絡電壓的方法。
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