secondary ion mass spectrometry 中文意思是什麼

secondary ion mass spectrometry 解釋
次級離子質譜法
  • secondary : adj 1 第二（位）的，第二次的；中級的 （opp primary）。2 副（的）；從屬的；附屬的；輔助的；補充的...
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  • mass : n 彌撒；彌撒的儀式[禱告、音樂]；彌撒曲。 a high [solemn] Mass （有燒香、奏樂等的）大彌撒。 a low ...
  • spectrometry : 度譜術
  1. The fabrication parameters were preliminarily optimized. the morphology and composition of the samples of the diamond film for different b / c ratios was investigated by scanning electron micrograph ( sem ) and raman scattering spectroscopy ( raman ). the content of different levels of b dopant in the diamond film was tested by secondary ion mass spectrometry ( sims )

    闡述了摻硼金剛石膜的制備工藝，研究了摻硼金剛石膜成核和生長的影響因素，初步優化了沉積摻硼金剛石膜工藝參數，同時對摻硼金剛石膜進行了掃描分析、拉曼分析、二次離子質譜分析和電阻率測試。
  2. In the paper the structure and principle of the secondary ion mass spectrometry ( sims ) are reported, and its typical applications in the hgcdte material and devices processing, especially in the measurement of the junction depth and the quantity analysis of trace impurity are introduced

    摘要文章介紹了二次離子質譜儀的結構及其基本工作原理，並通過對典型應用的分析，介紹了二次離子質譜分析技術在高靈敏度碲鎘汞紅外焦平面探測器材料和器件制備工藝中的作用，特別是在結探監測和微量雜質監控方面所發揮的重要作用。
  3. Surface chemical analysis - secondary - ion mass spectrometry - determination of relative sensitivity factors from ion - implanted reference materials

    表面化學分析.次級離子質譜法.測定離子注入標樣的相對靈敏系數
  4. Surface chemical analysis - secondary - ion mass spectrometry - method for depth profiling of boron in silicon

    表面化學分析.再生離子質量光譜測定.硅中硼的深仿形分析法
  5. Secondary ion mass spectrometry

    二次離子質譜法
  6. Surface chemical analysis - information format for static secondary - ion mass spectrometry

    表面化學分析.靜態次生離子質譜法的信息格式
  7. Surface chemical analysis - secondary ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質譜法.利用均勻摻雜材料測定硅中硼原子濃度
  8. Surface chemical analysis - secondary - ion mass spectrometry - method for estimating depth resolution parameters with multiple delta - layer reference materials

    表面化學分析.次級離子質譜法.多層標準材料深度溶解參數的估算方法
  9. Surface chemical analysis - secondary - ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質光譜測定法.採用均勻塗料的硅中硼原子濃度測定
  10. The conductivity, components and profile of the n - type diamond were characterized by hall effect, secondary ion mass spectrometry ( sims ) and the scanning electron microscopy ( sem )

    通過hall效應，二次離子質譜（ sims ）及掃描電子顯微鏡（ sem ）等多種技術手段，對n -型金剛石薄膜的導電特性、成分和薄膜的形貌等方面進行了表徵。
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