semiconductor diode 中文意思是什麼

semiconductor diode 解釋
半導體二極體
  1. The electron multiplier detector is appropriate to do ordinary detect works for its high sensitive and semiconductor photodiode ( such as silicon diode ) is appropriate to act as transfer standard detect for its high stability

    倍增器的靈敏度非常高,適合日常的測量工作;半導體型光電二極體(如si二極體)的穩定性好,適合作傳遞標準探測器。
  2. This paper analyses the numerical simulation problems of the semiconductor devices deeply. a one dimensional pn junction diode is worked out satisfyingly by the recursive method with the matlab5. 3 software

    論文深入的分析了半導體器件的數值模擬問題,利用matlab5 . 3等計算機工具,用解三對角矩陣方程的遞歸演算法,實現了pn結二極體的一維求解,取得了比較滿意的結果。
  3. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件,與普通的pn結二極體相比,它具有正向導通電壓低,響應速度快等優良特性。
  4. With the stringent requirement of low output voltage and high output current, semiconductor diode is necessarily replaced by synchronous rectifier to minimum voltage drop. because the existed driving schemes can not drive srs properly, two novel driving schemes for synchronous rectifiers in magnetic amplifier post regulating circuit are proposed in this paper

    已有的同步整流管驅動電路主要面對多路輸出的主輸出電路,而應用磁放大器調節的輔助輸出電路同步整流管的驅動,現有的方法存在磁放大器調節與同步整流管驅動的失配,降低了開關電源的效率。
  5. Semiconductor discrete device. detail specification for silicon tuning varactor diode for type 2cc51e

    半導體分立器件. 2cc51e型硅電調變容二極體詳細規范
  6. As the extensive application of the semiconductor laser diode ( ld ), it become more and more important to evaluate the quantity of laser beam. far - field divergence angle of laser beams is an important parameter about value of laser quality. not only the laser divergence peculiarity in the distance is reflected, but also quality of the correlative laser apparatus and the laser transmission is exactly known

    隨著半導體激光器日益廣泛的應用,對激光光束質量的評價越來越重要,而激光光束遠場發散角是評價激光質量的一個重要參數,它不但能反映遠距離傳輸時的激光發散特性,而且能準確評估出半導體激光器的品質及激光的傳輸質量。
  7. In order to increase the output power, reliability and stabilization, microchannel heatsink which is one of active heatsinks is used to cool high power semiconductor diode laser arrays in the paper

    為了提高激光器的輸出功率、可靠性和穩定性,本論文選取有源熱沉? ?微通道熱沉來冷卻大功率半導體激光器列陣。
  8. Mainly for capacitance, semiconductor, jingzhen, resistance, ic chips, jiechajian procedures, connecting pieces, switching devices, silicon, triode, diode, piezoelectric ceramic base films, tubes, electron tubes, electronic stamping, precision metal parts, production processes between cleansing processes

    晶元接插件連接件轉接器矽片三極體二極體壓電陶瓷基片顯象管電真空器件等內精密電子沖壓五金零件,生產加工過程工序間的清洗。
  9. One of the key problems is lasers cooling in researching high power semiconductor diode laser arrays

    大功率半導體激光器列陣研製的關鍵問題之一就是散熱技術。
  10. Semiconductor discrete device. detail specification for type 2dv8cp silicon microwave detector diode

    半導體分立器件. 2dv8cp型硅微波檢波二極體詳細規范
  11. Semiconductor discrete device. detail specification for type 2ck82 silicon switching diode

    半導體分立器件. 2ck82型硅開關二極體詳細規范
  12. Semiconductor discrete device. detail specification for type 2ck85 silicon switching diode

    半導體分立器件. 2ck85型硅開關二極體詳細規范
  13. Semiconductor discrete device. detail specification for silicon switching diode for type 2ck76

    半導體分立器件. 2ck76型硅開關二極體詳細規范
  14. Semiconductor discrete device. detail specification for silicon switching diode for type 2ck105

    半導體分立器件. 2ck105型硅開關二極體詳細規范
  15. Semiconductor discrete device. detail specification for silicon switching diode for type 2ck4148

    半導體分立器件. 2ck4148型硅開關二極體詳細規范
  16. Semiconductor discrete device. detail specification for silicon rectifier diode for type 2cz101

    半導體分立器件. 2cz101型硅開關整流二極體詳細規范
  17. Semiconductor discrete device. detail specification for silicon swicth - rectifier diode for type 2cz73

    半導體分立器件. 2cz73型硅開關整流二極體詳細規范
  18. Semiconductor discrete devices. detail specification for type 2cz10 silicon switching rectifier diode

    半導體分立器件. 2cz10型硅開關整流二極體詳細規范
  19. By testing, the total thermal of the microchannel heatsink for cooling high power semiconductor diode laser arrays is 0. 645 / w, which is consistent with the result of theory counting

    通過測試,所制得的無氧銅微通道熱沉冷卻半導體激光器的總熱阻為0 . 645 ~ 0c w ,與理論分析基本吻合,滿足散熱要求。
  20. A semiconductor diode array that is programmed by fusing or burning out diode junctions

    一種半導體二極體陣列,通過熔斷或燒斷二極體的結來實現編程過程。
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