semiconductor element 中文意思是什麼

semiconductor element 解釋
半導體元件
  • semiconductor : n. 【物理學】半導體。
  • element : n 1 要素；成分；（構成）部分；分子。2 【化學】元素；【數學】元，素；【機械工程】單元；單體；【無...
  1. Gmc systems are a core element in the machinery used to produce semiconductor components

    通用運功控制系統是應用於生產半導體組件的機器的關鍵部分。
  2. Applying two perpendicular polarized light states and a no - light state to express information, this new theoretical system covers : a ) whole architecture constructed from light processing, light transmission, electric control and photoelectric input and output ; b ) various computing units mainly consist of liquid crystal element and polarimeter ; c ) light bus mainly consists of interlinkage optic valves ; d ) ternary memory formed from semiconductor memory ; e ) register formed from optic fiber ring ; and i ) huge - numeral management based on the new concept of calculating path and calculating channel

    這個理論包括：光處理、光傳送、電控制、綜合輸入輸出的總體結構；以液晶元件和偏振器為主的各類運算器結構；以互連光閥為主的光空間總線；以半導體存儲器為主的三值數據存儲器結構；以光纖環為主的寄存器結構；以算位、算道新概念為基礎的巨位數管理方案等。
  3. With the rapid development of the semiconductor technology, large of the vacuum electronic device has replaced by the semiconductor element from the middle period of the last century. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and wide frequency band and high power field, especially in the exceed - high power field. the complexion won ’ t be changed for a long period

    自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被半導體器件取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。
  4. From the middle - later period of the last century, with the rapid development of the semiconductor technology, large of the vacuum electronic device was replaced by the semiconductor element. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and high power field. this complexion won ’ t be changed for a long period

    自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被其取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。
  5. Cadmium zinc telluride ( cd1 - xznxte or czt ) single crystal is one of the three element compound semiconductor materials with great performances used for the detection of x - ray and gamma - ray at room temperature

    碲鋅鎘（ cd _ （ 1 - x ） zn _ xte ，簡寫czt ）單晶體是一種性能優異的三元化合物半導體室溫核輻射探測器材料，具有閃鋅礦型的面心立方結構。
  6. Bio - engineering : the main components of this research field include oral bio mechanism, finite element analysis, bio - semiconductor process and bio - physics

    生醫材料工程類，主要如吸收性材料、高分子聚合物、薄膜工程、奈米生醫材料等。
  7. Nanoparticles are attracting a great deal of attention due to their interesting morphologies and particular properties. selenium is an important semiconductor material and a necessary trace element for human body

    硒是重要的半導體材料，具有優良的光電性能，可用於太陽能電池、整流器、硒鼓等光電子學領域。
  8. Triggering element is a semiconductor temperature sensor, whose temperature - dependent altered signals bring about changes in the switching state with the help of amplifiers and or electronics

    觸發元件是一個半導體溫度傳感器，隨溫度變化發出信號，並通過放大器或者和電子信號改變開關狀態。
  9. Bourdon springs, diaphragms, capsule springs and magnetic pistons are used as the mechanical pressure sensing element ; electronic pressure gauges and switches are based on thin - film technique, ceramic - or piezoresistive semiconductor sensors

    機械壓力傳感器元件有波登彈簧，橫膈膜，圓柱體彈簧和磁感活塞。電子壓力儀表和開關則是基於薄膜技術，陶瓷或壓阻半導體傳感器。
  10. And after the structure simulated by the aid of the finite element method ( fem ) software ansys, the optimal parameters are approached. a mems micro force sensor suitable for the microgripper is achieved which is based on piezoresistance effect of semiconductor. the operating principle of micro force sensor is presented, and modeling, analyzing the structure, achieving the best parameters

    為滿足微夾持器的需要，設計了半導體壓阻式mems微力傳感器，分析了微力傳感器的工作原理，對其結構形式進行了建模、分析，求取了結構的最優參數;給出了壓阻式傳感器的基本設計原則，選擇了合理的材料，以力學分析為根據，確定了力敏電阻條的位置，並對電阻條進行了設計，介紹了微機械製作技術，給出了傳感器晶元制備流程。
  11. In the manufacture of semiconductor devices, a photographically reduced representation of a circuit or element as used to establish an etching pattern

    在半導體器件製造中，以縮小的照相方式表示的電路或元件，用於建立刻蝕圖案。
  12. Quadratic finite volume element method for the transient behavior of a semiconductor device

    三維熱傳導型半導體問題的特徵有限元方法和分析
  13. Moving grid finite element method along characteristics for semiconductor device of heat conduction

    熱傳導型半導體瞬態問題特徵變網格有限元法及其分析
  14. Implicit - explicit multistep finite element methods for a semiconductor device with heat conduction

    顯式多步有限元法
  15. With doped ni element, the material converted into n - type semiconductor, what ' s more it has very low seebeck coefficient which shows ni is + 4 in this material

    摻入一定量的ni后，轉變為n型半導體材料，它的seebeck系數非常小，表明ni在這個化合物中的表觀化學價的+ 4價。
  16. Transistor based technology, high power mosfet is used for the vibration element mosfet : metal - oxide semiconductor field effect transistor

    三，主要功能特點：全部採用晶體管，振蕩元件採用大功率mosfet場效應管。
  17. A circuit consisting of two or more semiconductor wafers, each containing a single element

    一種由兩個或多個半導體晶圓片組成的電路，每個晶片包含一個單獨的元件。
  18. Besides the element semiconductors, such as si ( called the first generation semiconductor ), and the compound semiconductors, such as gaas, inp ( called the second generation semiconductor ), silicon carbide ( sic ) is one of the wide band - gap semiconductor materials ( called the third generation semiconductor )

    碳化硅（ sic ）材料是繼第一代元素半導體（ si ）和第二代化合物半導體（ gaas 、 inp 、 gap等）材料之後的第三代寬帶隙半導體材料。
  19. A kind of upwind finite volume element method for the transient behavior of a semiconductor device with heat conduction

    熱傳導型半導體瞬態問題的迎風有限體積元方法
  20. Finite volume element method along characteristics for the transient behavior of a semiconductor device of heat conduction

    半導體瞬態問題的二次有限體積元方法及分析
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