semiconductor experiments 中文意思是什麼
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Firstly, i provide a brief review of the previous achievements and investigations on the low - dimensional quantum devices and semiconductor superlattice, in which some principal theories such as bloch oscillations, wannier - stark ladder, zener tunneling and related progress in experiments are introduced
首先綜述了過去三十年低維量子器件與半導體超晶格的發展與相關研究，介紹了bloch振蕩、 wannier - stark臺階、 zener隧穿等關鍵理論以及相關實驗方面的進展，並引入簡化模型：緊束縛模型與單帶模型。 -
In the experiment, we use the he - ne laser and the semiconductor laser as the source, record the bessel beam patterns behind the axicon by using a digital camera and a microscope, measure the radius of the bessel beam central spot by film - scanning and measure the effect of both the radius of the aperture and the open angle of the axicon on the maximum non - diffraction distance. the experiments show that a specific propagating range has constant power and the beam has a bessel - like distribution in this range. the results agree with the beam corresponding to a diffraction free beam
同時我們還採用膠片掃描的方法測量了無衍射光束的中心光斑尺寸，測量了不同光闌孔徑和不同稜角情況下的最大無衍射距離和傳播軸附近橫截面內微小光孔中的光強，實驗結果顯示當激光光束經過軸棱錐轉換後有一段距離功率變化很小，且分佈近似貝塞爾分佈，符合無衍射光束的特性;經過聚焦后，呈現三維分佈中空的光束bottlebeam ，實驗結果與理論分析基本吻合。 -
Enterprise pessess of advanced electing cooker of frequency conversion semiconductor superior checking electric cooker etc. complete heat treatment equipment, equipments, precious physical and chemical experiments and quality guarantee system lay the reliable foundation for casting the products of high quality
公司現擁有先進的固體變頻電爐、半導體變頻電爐、消失模鑄造生產線、拋丸清理設備及完整的熱處理設備，超前的檢測設施、精確的理化實驗、完備的管理檢測手段及質量保證體系為鑄造高品質的產品奠定了堅實的基礎。 -
Topics covered include : design of experiments, response surface modeling, and process optimization ; defect and parametric yield modeling ; process / device / circuit yield optimization ; monitoring, diagnosis, and feedback control of equipment and processes ; and analysis and scheduling of semiconductor manufacturing operations
主題包括：實驗設計、反應曲面模型建構、流程最優化；缺點與參數良率的模型建構；製程/元件/電路良率最優化；設備與製程的監測，診斷及回饋控制；以及半導體製造作業的分析與排程。 -
In this paper, we analyze the doping experiments of several representational semiconductors and conclude the theoretical formula from different aspects. optimum doping contents in various materials of semiconductor materials are calculated. the quantitative calculation values are in accordance with the experimental results
本論文工作是在對電子薄膜材料摻雜的研究基礎之上，主要是對幾種有代表性的半導體發光材料的摻雜進行分析，從不同角度對最佳摻雜含量的理論進行探索，並應用理論公式對發光材料最佳摻雜含量進行理論計算，使理論計算出的最佳摻雜含量與實驗數據相符合。 -
Some previous experiments have showed that cavities had more efficient gettering than p - diffusion, mechanical damage and ion implantation. most of studies about cavities gettering are concentrated on the peculiarity of cavities gettering metal impurities intentionally into silicon wafer from the viewpoint of basic study. this technique especially applied to low - contamination process, how ever, has not been carefully studied, which should be important to the semiconductor manufacturing
而過去的工作多集中在從基礎研究的角度研究氦微孔對有意摻入金屬雜質的矽片的吸除特性，對無意引入的低濃度金屬雜質的器件吸雜效果的研究卻非常少，這方面的研究是氦微孔技術走向實際應用的必經之路。 -
Undoped gaas semiconductor as photoconductor detector materiel is used and gaas photoconductor detector with double microstrip structure is developed. a set of techniques of making gaas detector is found during experiments. in order to improve property of the detector, the detector is irradiated by electron
我們採用不摻雜的高純度的砷化鎵作為我們光電導探測器的材料，研製出了具有微帶結構的gaas光電導探測器，並經過深入仔細的研究，摸索出了一套製作gaas光電導探測器的有效工藝方法。 -
In order to satisfy the requirement of knowledge economy epoch and reform of current common physics experiment teaching in university, we can introduce some experiments about the new material zno : al studied in this paper into the electromagnetic researching experiments, such as hall measurements of semiconductor material in room and different temperature
為適應經濟時代發展的要求，適應大學普通物理實驗改革的需要，可將本文所研究的新材料zno ： al薄膜的部分研究內容引入電磁學研究性實驗，如半導體材料的常溫及變溫hall測量等。
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