semiconductor type 中文意思是什麼

semiconductor type 解釋
半導體類型
  • semiconductor : n. 【物理學】半導體。
  • type : n 1 型，類型，（工業產品的）品種；風格，型式。2 典型，榜樣，樣本，樣板，模範，範本；典型人物；具...
  1. Bcd detail specification for electronic component. semiconductor integrated circuit. type ch2019 4 - line to 10 - line decoder with bcd - in

    電子元器件詳細規范.半導體集成電路ch2019型4線- 10線譯碼器
  2. In lab the most often used is electron multiplier and semiconductor type

    實驗室常用的是電子倍增器和半導體型光二極體。
  3. Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes

    半導體分立器件gp gt和gct級3cg110型pnp硅小功率晶體管.詳細規范
  4. Semiconductor discrete device. detail specification for semiconductor opto - couplers for type gh21, gh22 and gh23 of gp, gt and gct classes

    半導體分立器件. gp gt和gct級gh21 gh22和gh23型半導體光耦合器詳細規范
  5. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  6. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范
  7. Semiconductor optoelectronic devices detail specification for type gd101 pin photodiode

    半導體光電子器件gd101型pin光電二極體詳細規范
  8. Semiconductor optoelectronic devices detail specification for type gd3550y pin photodiode

    半導體光電子器件gd3550y型pin光電二極體詳細規范
  9. Semiconductor optoelectronic devices. delail specification for type gt16 si. npn phototransistor

    半導體光電子器件gti6型硅npn光電晶體管詳細規范
  10. Detail specification for electronic component. semiconductor integrated circuit - type cd3220cp dual preamplifier with alc

    電子元器件詳細規范.半導體集成電路cd3220cp型帶alc雙前置放大器
  11. Detail specification for electronic components. semiconductor integrated circuit - cf3080 type transconductance operational amplifier

    電子元器件詳細規范.半導體集成電路cf 3080型跨導運算放大器
  12. Semiconductor discrete device. detail specification for silicon tuning varactor diode for type 2cc51e

    半導體分立器件. 2cc51e型硅電調變容二極體詳細規范
  13. Semiconductor photoelectric assembly detail specification for miniature duplex photoelectric localizer for type cbgs 2301

    半導體光電組件. cbgs2301微型雙向光電定位器.詳細規范
  14. Semiconductor integrated circuits. detail specification for type jf3140 and jf3140a bimos operational amplifiers with high input impedence

    半導體集成電路. jf3140 jf3140a型bimos高輸入阻抗運算放大器詳細規范
  15. The housing device of this generic type for accommodating at least one circuit arrangement, in particular a power semiconductor module or the like, has housing areas which are designed for the arrangement of, in particular, live contact elements and which each provide a number of arrangement positions for this purpose

    這種通用普通類型的外殼器件至少用於裝填一個電路裝置，特別是電源半導體模塊或類似物，在該外殼器件中設計有外殼區域，該外殼區域尤其是用來放置帶電的接觸單元，並且其每個都提供有多個此類放置位置。
  16. A trend of photo - induced electron transition from p - type pc to n - type organic semiconductor was strongly supported by the data of sps and fisps measurements, the wire - like configuration of the tio2 tubule nanostructure benefited the electron - transport thereby improved the efficiency of the disassociation of the photogenerated carriers

    表面光電壓測試結果表明，復合材料中存在著強烈的從p -型酞菁材料到n -型氧化物半導體材料的光致電荷轉移。而且tio _ 2的納米管和線狀結構提高了電子的傳輸效率最為明顯，使光生電荷的分離得到顯著改善。
  17. Detail specification for electronic component. semiconductor integrated circuit. type ch2021 4 - bit up down synchronous binary counter dual clock

    電子元器件詳細規范.半導體集成電路ch2021型4位二進制同步加減計數器
  18. It is well known that wo3 is a conductance - type semiconductor gas sensing material, but the research on fish freshness detector with wo3 - based gas sensor to trimethylamine is still at a beginning stage. in this project, the wo3 - based gas sensors to trimethylamine are made, and their gas sensing performance are researched, especially at low temperature, the results are as follows : 1. the nano - sized wo3 powder is prepared by sol - gel method of sodium tungstate and hydrochloric acid, and its microstructure is analyzed by using xrd, sem and tem, for material ’ s microstructure is closely related to gas sensing performance

    本課題制備了wo3材料，並以它為基材，製作了三甲胺氣敏傳感器，研究了其對三甲胺的氣敏性能，尤其是低工作溫度下的氣敏性能，得到結果如下: 1 、本課題以鎢酸鈉和濃鹽酸為反應物，用溶膠凝膠法制備了納米wo3材料，並採用x射線衍射分析儀（ xrd ） ，掃描電鏡（ sem ） ，透射電鏡（ tem ）對該材料進行結構分析和形貌觀察，研究發現材料的微觀結構與氣敏性能緊密相關。
  19. When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal.

    使一塊金屬與n型半導體接觸時，電子將從半導體流到金屬。
  20. It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x

    晶體的電學性能，發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大，載流於的濃度np減小，遷移率p 。
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