semiconductor-metal-semiconductor 中文意思是什麼

semiconductor-metal-semiconductor 解釋
半導體
  • semiconductor : n. 【物理學】半導體。
  • metal : n 1 金屬；金屬製品；金屬合金。2 【化學】金屬元素；（opp alloy）；金屬性。3 【徽章】金色；銀色。4 ...
  1. High purity gallium metal is the basic ingredient for semiconductor compound material, and it is also highly utilized in the manufacture of super conductor material, alloy, alnico etc

    高純度金屬鎵是生產化合物半導體材料的基礎材料，同時它還可以用於生產超導材料、合金材料、永磁材料等。
  2. Electronic and magnetic properties of 3d transition - metal - doped - - 2 chalcopyrite semiconductor

    2黃銅礦半導體的電磁性質
  3. Metal semiconductor field effect transistor mesfet

    金屬半導體場效應管
  4. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件，與普通的pn結二極體相比，它具有正向導通電壓低，響應速度快等優良特性。
  5. Simulation for metal - semiconductor - metal - photodetector msm - pd circuit based - on pspice

    的肖特基勢壘光電探測器的模擬
  6. The progress in sensitizer of photosensitized photoisomerization of norbornadiene, including triplet energy transfer photosensitizer, transition metal compounds photosensitizer, electron transfer photosensitizer and semiconductor photosensitizer, is reviewed

    論述了光敏化降冰片二烯異構化反應敏化劑的研究進展，包括三重態能量傳遞光敏劑，過渡金屬化合物光敏劑，電子轉移光敏劑，半導體光敏劑等幾種類型。
  7. Detail specification of metal rhomb package for semiconductor integrated circuits

    半導體集成電路金屬菱形外殼詳細規范
  8. Electrons from the metal will have to surmount the potential barrier to enter the semiconductor.

    金屬中的電子必須克服這個勢壘層才能進入半導體。
  9. China ' s domestic companies included 86 ic design companies : china integrated circuit design co., ltd., datang microelectronics, c * core, spreadtrum communication, lhwt, shenzhen state microelectronics, shenzhen zte ic design, hisense hiview tech., etc. ; 25 manufacturers : smic, huahong nec, hejian, china resources microelectronics, grace semiconductor manufacturing, csmc tech., asmc, etc ; 10 engaged in packaging and testing, such as nantong fujitsu, jiangsu changjiang electronics, tianshui huatian, 10 semiconductor equipment manufacturers : cetc no. 2 institute, cetc no. 48 institute, beijing sevenstar huachuang, institute of microelectronics of the chinese academy of sciences, institute of optics and electronics of the chinese academy of sciences etc. ; 37 semiconductor materials providers, including grinm semiconductor materials, heraeus zhaoyuan precious metal materials, etc

    國內參展商包括中國華大、大唐微電子、蘇州國芯、展訊通信、六合萬通、深圳國微、深圳中興集成電路、海信信芯科技等86家集成電路設計公司；中芯國際、華虹nec 、和艦科技、華潤微電子、宏力半導體、華潤上華、上海新進等25家主要集成電路製造企業；南通富士通、江蘇長電、天水華天等10家封裝測試企業；中電科技集團第2研究所、第48研究所、七星華創、中科院微電子所、中科院光電所等10家半導體設備企業；有研矽谷、賀利氏招遠等37家半導體材料企業。
  10. We cover a wide range of broadcasting products including the semiconductor camera light, lithium ion camera battery, nickel metal hydride camera battery, intelligent battery charger, camera accessories, tft lcd color monitor, hd - sdi interface, etc

    公司目前產品包括新聞采訪用半導體光源燈具、攝像機鋰離子電池和鎳氫電池、充電器、電源適配器、 tft彩色高清晰液晶監視器、 hd - sdi高清數字串列介面等。
  11. Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work. in addition, we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic

    本文討論了n型6h - sic歐姆接觸的制備工藝及其基本電學及熱學特性，並在此基礎上採用金屬au及ni在n型6h - sic硅面（ 0001晶向）上制備了具有一定特性的肖特基勢壘二極體。
  12. But the magic of a conformal mapping is that the device is guaranteed to operate in identical fashion to the circular version, just with the geometry of all the critical elements ( semiconductor, metal, field lines and current flows ) transformed by the mapping

    不過保角映射的神奇之處在於，它能確保這個裝置會以和其圓形版本完全相同的方式運作，所有的關鍵元素（半導體、金屬、場線與電流）都會隨著保角映射被轉換過去。
  13. Results show that the increase of semiconductor - metal phase transition temperature and the decrease extent of resistance is linear to zr ~ ( 4 + ) doping content, while the hysteresis width of vo _ 2 thin film fluctuates with zr ~ ( 4 + ) doping content

    實驗結果表明:隨zr含量的增加， vo _ 2薄膜的半導體-金屬轉變溫度和電阻突變數量級呈線性下降，同時，隨摻雜量的增加， vo _ 2薄膜的熱滯寬度的變化規律是先減小后增大。
  14. A model of i - v characteristics under illumination in gan - based metal - semiconductor - metal photodetectors has been built, using steady - state continuity equations and including the effect of surface states

    通過求解一維電流連續性方程和傳輸方程，同時考慮表面態陷阱的作用，建立了gan基msm結構紫外探測器在穩態光照下i - v關系的解析模型。
  15. Schottky barrier diode ( sbd ) is based on the rectification characteristics of metal - semiconductor contact

    肖特基勢壘二極體是利用金屬半導體的整流接觸特性而製成的二極體。
  16. Nanoscale semiconductor metal selenides and tellurides have attracted substantial research interests during the past years. it has been demonstrated that the optical, electrical and magnetic properties of them could be tailored in a controllable way by altering their structure, morphology, dimension, or composition

    如何在合成過程中實現對它們的晶體結構、維度、形貌、表面結構和能帶結構的調控，將為實現材料性能的人工剪裁，深入系統研究材料結構與性能的關系具有重要的意義。
  17. As one of the semiconductor - metal eutectic material ( sem ), the rod - like eutectic in - situ composite of si & tasi2 has lower work function, excellent electrical transport and the schottky junctions, which was grown - in during the crystal growth step

    Si - tasi _ 2共晶自生復合材料作為半導體金屬共晶材料（ sem ）之一，具有較低的功函數、良好的電傳輸特性和自生肖特基結等特點。
  18. The photoconductive uv detectors based on zno : al thin films, having a metal - semiconductor - metal ( msm ) structure with interdigital ( idt ) configuration, were fabricated by using au as a contact metal. the characteristics of dark and photocurrent of the uv detector and the uv photoresponse of the detector were investigated

    同時， au和zno : al薄膜間已形成歐姆接觸，無光照時，暗電流很小，當用= 350nm的光照射器件時，在6伏偏壓時，光生電流為58 . 05 a 。
  19. It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects

    Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，並在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。
  20. Gan - based meta1 - semiconductor - metal ( msm ) structure ultraviolet photodetector has been one of the focuses of interest in recent years for its plane structure, fabrication simplicity, and easy integration. however, the mechanisms of the i - v characteristics under illumination, the photocurrent gain and the strong persistent photoconductivity ( ppc ) are still unexplained to this day

    當前， gan基msm結構紫外探測器在穩態光照下的電流和響應度隨偏壓變化的關系、實驗中觀測到的光增益現象以及持續光電導效應（ ppc ） ，都沒有明確的理論解釋，因此器件設計中難以保證gan基msm結構紫外探測器的性能。
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