series resistance 中文意思是什麼

series resistance 解釋
串聯電阻
  • series : n 〈sing pl 〉1 連續；系列。2 套；輯；叢刊；叢書。3 【生物學】區；族。4 【植物；植物學】輪；列；...
  • resistance : n. 1. 抵抗，反抗，抗拒，抵禦；敵對，抵抗力，反抗力，阻力，【生物學】抗病性。2. 【電學】電阻；阻抗；電阻器。
  1. Lp series chain crusher apply to fertilizer production in the block of broken, but also widely used in chemical industry, building materials, mining and other industries, aircraft used in the process of crushing the synchronous speed high - intensity resistance mo carbide chain plate, i expected out of rational design, materials uniform broken, it is not easy nien wall to facilitate cleaning

    Lp系列鏈式破碎機適用於復合肥生產中塊狀物的破碎，同時也廣泛用於化工、建材、礦山等行業，該機在粉碎過程中採用同步轉速的高強度耐?硬質合金鏈板，進出料口設計合理，破碎物料均勻，不易粘壁，便於清理。
  2. 1. main products : high resistance forum chromium aluminum, nickel chromium, nickel chromium alloy with iron resistance electro thermal, high - temperature heat - resisting stainless steel series, precision alloy, cuprum nickel alloy and manufactured goods

    1 .主要產品：高電阻鐵鉻鋁鎳鉻鎳鉻鐵電熱合金材料高溫耐熱不銹鋼系列合金材料精密合金銅鎳合金材料等。
  3. Ym series is an epoxy - bond, two - part liquid thermal cure marking ink. it has such perfimance characters as good printing adaptability, fast curing rate excellent adhesion and insulation resistance. it is better to be used in making double surface and the multipke layers circuit boards

    Ym為雙組液型熱固化標記油墨，具有良好的印刷性，固化速度快，塗膜硬化后具有優異的附著力、耐化學性，特別適合用於雙面及多層印刷電路板。
  4. To further reduce equivalent series resistance and improve long term reliability, the leads are then soldered with lead free silver solder

    為了進一步的減少等效串聯阻抗和改善，長期的信賴度，引線是以無鉛銀焊錫來接焊
  5. The products is of high water hydrophobe device usedin suitable and has the characteristics of aging resistance, resistance, tracking resistance, and corrosive resistance. it can withstand high bent load, strong impact force fn12 - 12 series indoor use high voltage load switch fn12 - 12 and fn12 - 12r is of three phases indoor use ac high voltage load switch for breaking and making the circuit of 50hz, 12kv system under rated loading

    Fn12 - 12和fn12 - 12r組合電器是額定電壓12kv額定頻率50hz的三相高壓開關設備用於分合負荷電流閉環電流空載變壓器和電纜充電電流關合短路電流配裝接地開關的負荷開關，可以承受短路電流
  6. Film lamination ceiling series is a best selling product series of our company in the 21st century. it is made of the substrates of aluminum plate or colorful graphic board covered with imported pvc film and composite color coatings. it has the advantages of colorful surface detail, luxuriance, novelty, anti - corrosiveness, soiling resistance ease of cleaning and durable coloring

    品以鋁板或彩圖板為基材，選用進口pvc膜與復塗彩色塗料復合而成，表面花紋色彩豐富豪華新穎耐腐蝕抗污漬方便擦洗具有三十年不變色等優點。
  7. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  8. Because of the limitation of thin silicon film epitaxial technology, it is difficult to grow thin silicon film epitaxial of thickness less than 2 m for a long time, which makes the series resistance large

    但長期以來，由於薄硅外延生長技術的限制，無法生長出優質的厚度小於2 m的薄硅外延層，使硅肖特基二極體的串聯電阻無法降的更低，限制了其截止頻率的提高。
  9. Methods of calculating the inductor ' s quality factor and inductance are studied. experimental results are analyzed in detail and some results are obtained : quality factor q decreasing with the increase of turns n ; inductance l proportional to turns n2 ; series resistance rs increasing - iv - _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ as g - _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ with frequency due to skin effect

    得出了一些有用的結論如平面螺旋電感的q值隨著圈數n的增加而減小；電感量與圈數n的平方成正比；高頻時，圈數越多，串聯電阻的趨膚效應越厲害，阻值越大等。
  10. Ceramic capacitors at high frequencies, method of test for effective series resistance and capacitance for multilayer

    高頻多層陶瓷電容器有效串聯電阻和電容的試驗方法
  11. The system can generate sweep frequency signal with frequency range from 100khz to 150mhz and power range from - 40dbm to + 18dbm, and measure the gain and phase of the crystal. according to the gain and phase information and the iec - 444 standard, crystal parameters can be calculated, such as nominal frequency, series resistance, shunt capacitance, motion capacitance, motion inductance, q factor and so on

    該系統能產生頻率范圍達100khz 150mhz ，功率范圍為? 40dbm + 18dbm的掃頻信號，並能對晶振的增益和相位差進行測量，其測量結果按照iec - 444晶振測量標準進行實時處理和計算，從而得到晶振的串聯諧振頻率、並聯諧振頻率、等效電阻、靜態電容、動態電容、動態電感和品質因數等主要電參數。
  12. Improving the electroless plating process based on the work of the past decreases the series resistance from 0. 5 to 0. 1, increases the parallel resistance from 45 to 1119. 7, improves the filling factors from 49. 8 % to 66. 3 %, therefore the conversion efficiency comes to 8. 2 %

    機械刻槽電池電池結構的設計是依據bp公司的刻槽電池設計的，在以前工作的基礎上，進一步改變化學鍍工藝條件，是串聯電阻由原來的0 so降低到了0 iq ，並聯電阻由原來45q增加到了1119
  13. However, ingaas strained - layer single quantum well lasers, optimized for low threshold current and low series resistance, have a highly elliptical beam structure emanating from the laser facet

    但是報道的技術中多是針對圓對稱光束或近圓對稱光束。
  14. Series resistance lamp

    串聯電阻燈
  15. Series resistance is an important factor confining the response speed of schottky barrier diode

    串連電阻是制約肖特基二極體響應速度的一個關鍵因素。
  16. Specific capacitance of edlcs based on activated cnts were obviously improved and the equivalent series resistance decreased, but the effects were influenced by duration of activation process

    由活化后的碳納米管製成的雙電層電容器的比電容明顯提高，等效串聯電阻下降，性能得以改進。
  17. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  18. Key technologies and its mechanism for improving crystalline silicon solar cells in the scale manufacture have been researched in this thesis. after sioa surface passivation and forming gas treatment utilization in the scale manufacture, the surface recombination and series resistance of solar cells have been reduced while their open - circuit voltage, fill factor and efficiency improved

    本論文研究了提高晶體硅太陽電池效率規模化生產工藝技術的主要環節和相關機理，將sio _ 2表面鈍化、 forminggas處理用於規模化生產，降低了太陽電池的表面復合速度和串聯電阻，提高了開路電壓、填充因子和轉換效率。
  19. The paper explains the method of the petersen coil parameter selection and expatiates the working principle of micro - computer controller. new methods of on - line measuring of the capacitive current and the control of the series resistance are put forward ? which lead to the integration of the automatic resonance and the faulted line selection in a compensating network

    文中說明了消弧線圈參數的選擇方法，闡述了微機控制器的工作原理，提出了在線測量補償電網對地電容電流以及控制串聯電阻的新方法，實現了補償電網自動調諧與單相接地選線的一體化。
  20. Different from fabricating sbd with bulk semiconductor, thin semiconductor films were utilized as the active layer in order to minimize the series resistance. si epilayer with sub - micro thickness was deposited by ultra high vauum chemical vapor deposition ( uhv - cvd ). the sbd with rectifying performance was developed, using si epilayer as the active layer

    利用我們自行研製的超高真空化學氣相沉積（ uhv - cvd ）技術外延了亞微米級的si薄膜，成功的製作了具有整流特性的高頻薄硅肖特基二極體的原型器件。
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