silicide 中文意思是什麼

silicide 解釋
n. 名詞 【化學】硅化物。

  1. Investigation of the oxidation of mo3si - mo5si3 eutectic silicide

    3共晶硅化物的氧化
  2. Tribological properties of a laser - clad cr2ni3si cr3si metal silicide composite coating

    金屬硅化物復合材料塗層耐磨性研究
  3. Standard specification for refractory silicide sputtering targets for microelectronic applications

    微電子設備用耐熔硅化物濺射電極
  4. Test method for quantifying tungsten silicide semiconductor process films for composition and thickness

    定量分析硅化鎢半導體加工膜組分和厚度的標準試驗方法
  5. Increase of oxidation temperature transforms more silicide, which was formed during deposition of hf, to silicate

    ，成為介於hfo 。薄膜和出襯底之間的界面層。
  6. These high - k materials degraded to silicide island at temperatures of higher than 950. these results are consistent with rta samples

    在950加熱后， high - k物質將熱降解為hfsi 。各樣品在加熱過程中的變化與其在rta處理后的結果是一致的。
  7. With the decrease of silicide content in interfacial layer, leakage property of hfo2 mos architecture was greatly improved

    界面層里殘余的硅化物的含量越低，薄膜的漏電性能就越好。
  8. So next work should be to study the crystallization mechanisnu nickel contents and mobility after the nickel - silicide on the surface is removed

    對此方法的晶化機理和對鎳的含量及去除表面層的鎳化合物后遷移率的大小測試分析將在下一步工作中展開。
  9. The cracks extend along the matrix / strengthening - phases interfaces and form the cleavage steps and tear ridges. there appear some very small dimples on the fracture surfaces of the directionally solidified samples, which come from the nb - based solid solution particles in the big plates of the strengthening phases, but no dimples on the fracture surfaces of the as - cast sample. it can be concluded from above results that niobium - niobium silicide based in - situ composites ( rmics ) with a uniformly orientated microstructure can be produced by the ebfzm with high temperature gradient, and their mechanical properties can be increased

    隨著抽拉速率的提高和硅化鈮強化相間距與尺度的減小，材料的室溫拉伸強度和斷裂韌性均有提高， _ b最高可達778 . 4mpa ， k _ （ ic ）達到了46 . 3mpa ? m ~ （ 1 / 2 ） ；試樣的拉伸斷口基本表現為脆性解理斷裂的花樣，裂紋沿基體強化相界面繞過強化相進行擴展，在裂紋擴展方向存在解理臺階，並形成撕裂棱。
  10. Bidirectional diffusion between silicon and tini thin film has been exhibited in eds linescan curves, along with mapping distribution micrographs. moreover, a ternary titanium nickel silicide - nisti2si, is formed during sputtering deposition, which is determined by xrd analysis

    大量試驗表明：配比為35nil ： 27inl ： 118rnl的hfgyo3a12o腐蝕系統對twi薄膜具有較快的腐蝕速率，而且對8的腐蝕不明顯，因而適合於硅基tini形狀記憶薄膜的濕法腐蝕。
  11. It is the first time to study the mechanism of interfacial reaction in sic / ti composites by quantum chemistry computation methods. a suitable method to calculate titanium carbide and silicide was found and the thermodynamic and dynamic data involved in interfacial reaction of sic / ti composites have been obtained

    首次將量子化學計算理論運用於金屬基復合材料界面反應的研究中，運用gaussian98量子化學計算程序，找到了適合於研究過渡族金屬ti的碳化物和硅化物的計算方法，獲得了sic ti基復合材料界面反應的熱力學和動力學數據。
  12. Meanwhile, the er 4f spectrum measured upon annealing exhibits well - resolved fine structure, implying that only mono - species of er silicide may exist on the surface

    同時觀察到了清晰的鉺4f價帶譜，這暗示著只有一種鉺硅化物在表面形成。
  13. Our company is a joint - stock company operated under the modern corporation system. we have a production line of organic chloride, silicide, nitride compounds and etc

    本公司是一家集醫藥中間體研發、生產、銷售為一體的、按現代企業制度運作的股份企業。目前產品以有機鹵化物、有機硅化物、氮化物系列產品為主。
  14. In this paper, an ingot of niobium - niobium silicide based in - situ composites ( rmics ) was prepared by arc melting process, and nb - nb3si / nb5si3 in - situ composites with a uniformly orientated microstructure were produced in a high temperature gradient directional solidification apparatus named electron beam floating zone melting ( ebfzm ). the relationships between the processing parameters and the characteristics of the solidified microstructure have been investigated. the influence of the microstructure on the mechanical properties has been revealed and the rupture mechanism at room temperature has been discussed

    本文採用真空電弧自耗熔煉法制備了鈮?硅基rmics材料的母合金錠，並採用電子束區熔（ ebfzm ）高溫度梯度定向凝固裝置制備了定向效果良好的nb - nb _ 3si nb _ 5si _ 3共晶自生復合材料，並對其定向凝固工藝參數和組織之間的對應規律、組織特性進行了研究，探討了凝固組織對室溫力學性能的影響及其斷裂機制。
  15. The annealing also changes the grain morphology. the p grains from the amorphous layer are finer than in the other cases. silicide grains grow towards the substrate at high annealing temperature and finally shrink into isolated islands, thus deteriorating the silicide / si interface smoothness

    由於非晶的形成，使得退火后晶粒要經重新形核和長大的過程，所以在同樣的退火條件下，與未形成非晶的樣品比，硅化物顆粒要小。
  16. In order to suppress the formation of silicide interfacial layer, a zro2 thin film was deposited as a barrier layer between hfo2 and si. the samples with barrier layer exhibited better leakage and c - v character than the directly deposited ones

    作為阻擋層抑制hf和a的互擴散反應，減小了界面層厚度，並提高了界面層的氧化效率，與無阻檔層的樣品相比電學性能得到了顯著的提高。
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