silicon carbide paper 中文意思是什麼
silicon carbide paper
解釋
火叉-
Sic whisker is incorporated in the raw material of reaction bonded silicon carbide ( rbsc ) to prepare sicw / sic composites. the effect of fabrication process on the microstructure and the properties of the sintered body are investigated in this paper. based on the research results on the sinter process, it is concluded that the sic whisker solve rapidly even at 1450
本課題將sicw引入反應燒結碳化硅（ rbsc ）體系，提出了一種制備高sicw含量sicw / sic復合材料的思路，研究了材料制備工藝對sicw / sic復合材料顯微結構的影響，討論了sicw / c坯體的反應燒結機理，對材料顯微結構與力學性能的相關性作了研究。 -
This paper is concentrated on preparing si3n4 / sic, si2n2o / sic and o ' - sialon / sic by reactive sintering techniques. the components of raw materials and microstructure of these three ceramics were studied. at the same time, molten al, cu, zn, mg and cryolite corrosion resistance of silicon nitride bonded silicon carbide were tested too
本論文通過成份及微結構設計，採用反應燒結工藝制備了力學和抗氧化性能優異的o ' - sialon sic 、 si _ 2n _ 2o sic和si _ 3n _ 4 sic陶瓷材料，並研究了它們的抗鋁、銅、鋅、鎂有色金屬熔體及冰晶石熔鹽侵蝕性能。 -
Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation
研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。 -
In this paper, finite element software ansys is used to simulate the thermal conductivity and pressureless infiltration technique is used to produce aluminum infiltrated silicon carbide composite with high volume fraction of sic. the influence of interfacial thickness and temperature on thermal conductivity and cte have been investigated and analysed
本文採用有限元軟體ansys對鋁滲碳化硅復合材料的有效熱導率進行了數值模擬，用無壓浸滲法制備了高體積分數的鋁滲碳化硅復合材料，研究了界面層厚度和溫度等對鋁滲碳化硅復合材料的熱導率和熱膨脹系數的影響，並進行了分析。 -
Using genetic algorithm, established brdf models of the silicon carbide paper and granite material and optimized parameters retrieval models
採用遺傳演算法建立了金剛砂和大理石材料的雙向反射分佈函數的參數模型，對模型進行參數反演時，通過遺傳演算法進行優化。 -
In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
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