silicon compound 中文意思是什麼
silicon compound
解釋
硅化合物-
Organic silicon : silicon oil ( silicon grease, silicon suckling liquid, silicon surfactants ), silane coupling agent ( organic silicon chemistry reagent ), high temperature sulfur rubber, liquid silicon rubber, organic silicon polymer, silicon resin, organic silicon singles, compound etc., organic silicon produce and the related raw material, aid chemical preparation, technique
有機硅：硅油（硅脂、硅乳液、硅表面活性劑） ，硅烷偶聯劑（有機硅化學試劑）高溫硫化橡膠、液體硅橡膠、有機硅聚合物、硅樹脂、有機硅單體、復合物等，有機硅生產相關原料、助劑、技術。 -
Study on material determination of silicon steel sheet cool punching concave die and compound intensifying processing
硅鋼片冷沖凹模的選材與復合強化處理研究 -
The company is the only large business enterprise to produce compound silicon silicate materials and foam asbestos production. in the year of 2004, the company had passed the iso9001 quantiyt system attestation. at the same time, it was appraised “ 2004 - 2006 do not need to be checked corporation ”. and distributed the certificate
並且是目前江蘇省唯一一家生產復合硅酸鹽製品和泡沫石棉製品的大型企業，在2004年獲得iso9001質量體系認證，並被當地工商管理部門評為「 2004 - 2005年度免檢企業」並頒發證書。 -
It is the only one compound semiconductor whose native oxide is sio2. therefore, the sic devices can be manufactured using the technology of the silicon processing, for example mos devices
Sic是唯一可以氧化生長成sio _ 2的化合物半導體材料，這使得它可以運用si平面工藝條件進行sic器件的製造，特別製作mos器件方面。 -
Honda said its solar cells would be composed of non - silicon compound materials, consuming half as much energy and generating 50 percent less carbon dioxide during production when compared with conventional solar cells made from silicon. the company aims to sell the solar cells for both residential and industrial use. it will initially target the japanese market
本田汽車公司還表示，他們即將投入生產的太陽能電池所用的材料是不含有硅的化合物，與以硅為原料製成的傳統太陽能電池相比，其在生產過程中所消耗的能量僅為後者的一半，而排放的二氧化碳也會相應減少50 。 -
The properties of crystalline carbon nitride films ( cn ) on silicon substrate have been explored experimentally by the pe - pld and pe - cvd method. the relation between different deposition parameter and the structure properties of cn compound films is analyzed ; the deposition mechanism of the cn films is studied. cn thin films with up to 21at % nitrogen content have been prepared by pld method
本論文採用pe - pld技術和pe - cvd技術，以si基片為襯底對晶態cn薄膜制備進行了實驗探索，主要探討不同工藝條件和cn化合物薄膜的結構特性之間的關系，研究晶態si基cn薄膜的生長機理。 -
Test results showed 1 % silicon dioxide, ptfe3 % and calcium carbonate complex prescriptions ( calcium carbonate and rare earth compound particles are both 1 % ) have good effect on reducing the friction and wear, and has prominent role in industrial applications of high value
試驗結果表明:二氧化硅1 % 、 ptfe3 %配方和復合碳酸鈣（碳酸鈣和稀土元素各1 % ）配方具有突出的減摩抗磨作用，具有很高的工業應用價值。 -
In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。 -
Besides the element semiconductors, such as si ( called the first generation semiconductor ), and the compound semiconductors, such as gaas, inp ( called the second generation semiconductor ), silicon carbide ( sic ) is one of the wide band - gap semiconductor materials ( called the third generation semiconductor )
碳化硅（ sic ）材料是繼第一代元素半導體（ si ）和第二代化合物半導體（ gaas 、 inp 、 gap等）材料之後的第三代寬帶隙半導體材料。 -
Experiments have shown that the nano silicon dioxide particles, nano teflon particles and calcium carbonate / rare earth compound particles have good performance on reducing the friction and resisting the wear
實驗表明，添加的納米二氧化硅微粒、納米聚四氟乙烯微粒和碳酸鈣、稀土復合微粒具有很好的減摩抗磨作用。
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