silicon reduction 中文意思是什麼
silicon reduction
解釋
硅熱還原-
2 projects on rare earth thermometallurgy, including rare earth metal electrolysis, reduction and the production of rare earth silicon, iron and magnesium alloy, etc
稀土火法冶金項目，包括金屬電解、還原和稀土硅鐵及鎂合金的生產等方面； -
Projects on rare earth thermometallurgy, including rare earth metal electrolysis, reduction and the production of rare earth silicon, iron and magnesium alloy, etc
稀土火法冶金項目，包括金屬電解、還原和稀土硅鐵及鎂合金的生產等方面； -
Abstract : it analyses reduction machanism of silicon in femn blast furnace ， basic conditions, ways and technological measures to smelt low silicon blast furnace femn, points out the technical and economical advantages of smelting low silicon femn in blast furnace
文摘:分析了錳鐵高爐內硅還原機理、冶煉低硅高爐錳鐵的基本條件、途徑和工藝措施，指出了高爐冶煉低硅錳鐵的技術經濟優勢。 -
Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )
隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。 -
Research on technology for iron - increasing and silicon - reduction
用潘洛鐵礦精礦生產超級鐵精礦粉的研究 -
Application of derrick high frequency fine screen in iron increase and silicon reduction
德瑞克高頻細篩在降硅提鐵中的應用 -
Standard test method for trace metallic impurities in electronic grade aluminum - copper, aluminum - silicon, and aluminum - copper - silicon alloys by high - mass - reduction glow discharge mass spectrometer
用高質量減少輝光放電質譜儀測量電子級鋁銅鋁硅和鋁銅硅中微量金屬雜質的標準試驗方法 -
A final tweak is new shift cables that have silicon grease coating the full length of the outer, for a 10 percent claimed reduction in shifting effort
最後一個改進是新的變速線：用硅油脂做表面處理的表面，據稱可以減少10 %的變速摩擦負荷。 -
We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation
在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。 -
Study on the reduction of thermocapillary convection of the single - crystal growth of silicon under microgravity
微重力下單晶硅生長中熱毛細對流的控制研究 -
Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
矽片氧沉澱特性的測定-間隙氧含量減少法 -
Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
通過測量間隙氧含量的減少表徵矽片氧沉澱特性的方法
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