simox 中文意思是什麼

Simox soi wafers produced by ion implant processes were used in this experiment. the results for simox soi samples we got here revealed that all the three structures are valuable for soi electrical characterization and sis structure has irrefragable advantage over the other two structures. the soi transistors have been the key devices for achieving the low voltage operation and low power consumption, because of the small junction capacitance, the small s - factor, and the small substrate bias effect

這三種模型分別是：第一，將傳統的mos電容結構應用到soi材料上來進行c - v ， i - v測試，分析計算soi材料的重要電學性能參數；第二種，針對soi材料的特殊結構，為了適應生產線上對無損soi園片進行電學性能測試的要求，應用mosos結構來對soi材料進行電學性能表徵。

We propose a novel and simple y - branch configuration with simox soi wafers in order to achieve an asymmetric branching ration and low excess loss. the proposed structure only deviate the center axes of input taper wave - guides

我們用soi晶片設計了一種新型的y分支型功率分配器，此結構通過改變中心軸線的位移值即可實現不同的功率分配的功能。

The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。

In the current experimental parameter range, thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained. compared to the conventional simox - soi, the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers

本論文一個重要發現是以水等離子體離子注入方式所形成埋層sio _ 2厚度得到了大幅度的展寬，相比傳統simox法，其展寬幅度高達50 ，這一重要發現為降低注入時間和soi制備成本提供了有效的途徑。

We studied the resurf, trench - gate, 3d - resurf ldmos. we designed the power switch ic based on epitaxial simox substrate, satisfying the requirements of the user. this ic can sustain 60 ~ 80v shutdown voltage overshot

在此基礎上，本文設計了性能滿足用戶要求的，基於esoi襯底結構的功率開關集成電路，該集成電路可承受60 ~ 80v的反向過沖電壓，並具有過流，過壓等保護電路。

Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige

The paper is to propose a novel soi high - voltage structure and to design a soi power switch ic based on epitaxial simox substrate for an institute, which will be used on firing controlling system

本文目的是為某軍工電路研究所設計，應用於某軍工系統研究所的火炮控制系統的soi高壓器件及功率開關集成電路。

Nowadays, separation by implantation of oxygen ( simox ) and smart - cut are two major methods to commercially supply soi wafers, but these soi wafers are much expensive than si wafers due to the long time ion implantation required for the high dosage ( 1017 - 10l8cm - 2 ) by conventional beam - line ion implanters, which, to some extent, embarrasses its widespread adoption in mainstream microelectronic products

目前制約soi技術商業應用的重要因素之一是soi圓片過低的產量和過高的價格，主要原因是使用傳統線掃描式離子注入機需要很長時間才能達到所需的注入劑量（ 10 ~ （ 17 ） 10 ~ （ 18 ） cm ~ （ - 2 ） ） 。

Up to present we have prepared the epitaxial simox substrate ( i layer 0. 37um, silicon layer 2. 8um ), and done the circuit design, process integration, device simulation and some layout design )

本項目目前已完成了simox外延襯底的制備（ i層0 . 37um ，外延硅層2 . 8um ） ，以及功率開關集成電路的電路設計，工藝設計和部分版圖設計。

After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。

Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness

獨特設計的氮氣氛退火及分步退火實驗證明了原注入樣品的缺陷層中氫及氫致缺陷的存在使得在退火過程中加速外界氣氛中的氧擴散進來，並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長，加速了高溫退火中的內部熱氧化過程，從而形成了比傳統相同劑量simoxsoi厚得多的氧化埋層。

We have done the following work in this paper : 1. proposal of a novel high - voltage soi lateral structure ( tsoi ), and establishment of its blocking theory ; 2. proposal of devices based on epitaxial simox soi ( esoi ) substrate ; 3

本文主要進行了三個方面的工作： 1 、提出了降場電極u形漂移區的橫向高壓器件結構tsoi （ trenchsoi ） ，並建立了該結構的解析理論[ 1 ] ； 2 、提出基於simox外延襯底esoi （ epitaxialsimoxsoi ）的器件結構； 3 、設計了基於simox處延襯底結構的功率開關集成電路。

Effects of si ion implantation on the total - dose radiation properties of simox soi materials

材料抗總劑量輻照性能的影響

On the research of soi power switch ic, we proposal the devices based on epitaxial simox substrate

本文同時對基於該結構和屏蔽槽結構的soi高壓復合結構進行了研究[ 2 - 4 ] 。

2. in the first, the successfully fabricated si - based sets on p - type simox substrate are based on the process in china. the technology process is also offered for the controlled fabrication of single sets

利用這些納米結構的制備技術，在p型simox矽片上成功地製造了硅量子點單電子晶體管，形成了一套制備硅單電子晶體管的工藝方法。

Sige simox ; 3. sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen. sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ), gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies

Sige薄膜生長方面：在熟悉各種薄膜外延技術的基礎上，採用了近年來發展較為成熟的固態源分子束外延（ ssmbe ） 、氣-固態源分子束外延（ gsmbe ） 、超高真空化學氣相淀積（ uhvcvd ）三種sige薄膜外延技術，在硅（ 100 ）襯底上外延生長了sige薄膜。