single nucleation 中文意思是什麼

single nucleation 解釋
單核形成
  • single : adj 1 僅只一個的,單獨的;單式的;【植物;植物學】(花等)單瓣的;【無線電】單工的,單次的。2 獨...
  • nucleation : n. 【物、化】成核(現象);晶核過程,核子作用;集結;人工降雨作用。
  1. Accordingly, a new framework, which provides a common scheme for the numerical simulation on the macroscopic behavior of ferroelectrics though multi - scale analysis on the coupled thermo - electrics - mechanical behavior of multiphase in heterogeneous material, is induced to construct the effective constitutive equation of multiphase. in chapter four, based on the law of domain nucleation and domain wall motion of 1800 domain switching, a new scheme of domain switching and numerical simulation approach is put forward on the foundation of thermodynamics. driving traction, nucleation criterion, velocity of domain wall motion, kinetic relation and rate of domain switching in a single grain are given

    第四章以鐵電體1800疇變的過程中形核規律和疇界運動規律的實驗觀察結果為基礎,根據熱力學理論建立鐵電體疇變的理論框架和數值模擬方法;給出了單疇內疇變驅動力、新疇形核準則、疇界運動速度公式、疇變動力學的表達式,單晶的疇變速率公式;用細觀力學的觀點給出了對多晶鐵電體多場耦合的有效性質進行包含疇變速率影響的多尺度分析方法。
  2. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制,以控制沉積過程,減少金剛石膜生長過程中的缺陷,並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程;利用微波對材料的選擇加熱特性,通過構造等效方程,並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中,建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型,為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備,並對基片加熱材料進行了設計和優選,以獲取大面積均勻的溫度場區,甚至獲得大於基片臺尺寸的均勻溫度區;作為研究重點之一,開展了微波等離體化學氣相沉積金剛石的成核與生長研究,系統地研究了在( 100 )單晶硅基片上mpcvd沉積金剛石膜的實驗過程中,基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響,分別用raman光譜、 x射線衍射( xrd ) 、掃描電鏡( sem ) 、紅外透射光譜( ir ) 、原子力顯微鏡( afm )對薄膜進行了表徵,確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  3. The study on the structure and micromorphology of two znse monocrystal indicated that the growth mechanism of znse monocrystal via vapor is two - dimension nucleation and growth, and ( 111 ) face is the mainly appearing face. the results provide an important experimental evidence for the growth theory of singular face. ultrafast nonlinear optical properties of as - grown znse single crystals were investigated by femtosecond pulses

    兩種方法生長znse體單晶的結構和形貌研究表明,在輸運劑zn伽場) 3c15的存在和本文實驗條件下, cvt氣相生長znse的機理主要為二維成核與生長機理, ( 111 )面為主要生長晶面,該結果為立方晶體的奇異面生長理論提供了重要的實驗證據。
  4. Heat treatment can eliminate stress of crystal and facilitate crystal growth. pbo as mineralizer accelerates nucleation and crystal growth rates. the results of xrd demonstrate that the single perovskite phase plzst is stable under the high temperature

    不同工藝條件下形成plzst晶體的情況也不同,合適的工藝條件為: 750保溫2小時就可以生成plzst晶體;在一定的成型壓力下可以促進plzst晶體的長大;利用退火來消除晶體的內應力也有利plzst晶體的長大;加入過量pbo有利plzst晶體的生成。
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