single-transistor 中文意思是什麼

single-transistor 解釋
單晶體管
  • single : adj 1 僅只一個的，單獨的；單式的；【植物；植物學】（花等）單瓣的；【無線電】單工的，單次的。2 獨...
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. Thirdly, the paper researchs the application of single electron transistor and the synthesis theory of cicuit based on quantum dot cellular automata by synthesis example of quantum cellular neural network based on build schr ? dinger equation of coupling quantum dot. at last, the paper researchs digital integrated circuit design based on quantum dot cellular automata and design a 8 - bit quantum dot cellular adder by qcadsign based on a method of majority logic reducetion for quantum cellular automata, it prove this designer of 8 - bit quantum dot cellular adder is correctly

    Dinger ）方程為基礎的量子點細胞自動機電路綜合理論，本文以量子細胞神經網路為綜合實例，建立耦合量子點的薛定鄂（ schr ? dinger ）方程組，通過化簡得到類似細胞神經網路的非線性電路方程。最後研究了基於量子點細胞自動機數字集成電路設計，通過建立邏輯方程，簡化邏輯方程，並設計基於精簡qca擇多邏輯門8位加法器，並用qcadesign進行了模擬，實驗證明設計正確性。
  2. A modern power electron power component igbt ( insulate - gate bipolar transistor ) is used as the main power switch component of power converter. it takes 80c196mc single - chip as core processor

    電源變換器的功率開關器件採用現代電力電子功率器件igbt （ insulategatebipolartransistor ，絕緣柵雙極型晶體管） ，控制系統以80c196mc單片機作為控制核心。
  3. The paper are investigating several alternatives for example quantum dot cellular automata and single electron transistor to substitute conventional field effect transistors ( fet ’ s ) for ultra large scale integrated circuit ; and i take research on the modeling of single electron transistor and single electron cicuit

    基於以上考慮，本文研究一些新的基於量子力學原理的器件如量子點細胞自動機（ qca ） 、單電子晶體管（ set ）取代以fet器件為基礎超大規模集成電路，主要在單電子晶體管建模和單電子電路綜合做了一些研究工作。
  4. In fact, the transistor consists of only a single piece of germanium or silicon with wires connected to it

    事實上，晶體管只是由一個鍺片或矽片構成的，導線都接在其上面。
  5. First, the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor, and simulate characteristic of single electon transistor with matlab tool. secondly, the paper combine spice simulation program with master equation of single electron transistor, put forward novel spice simulation method of single electron transistor based on master equation, by choose master state of single electron transistor and build master equation of single electron transistor, afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program, it ’ s result prove the method is availability precision comparing with master equation method

    然後在此基礎上提出了基於主方程法單電子晶體管spice模擬新方法，本論文結合當前電路模擬軟體spice程序和單電子晶體管主方程模擬演算法，通過選擇單電子島電子數的主要狀態，建立單電子晶體管主方程，然後求解主方程，求得單電子晶體管spice等效模型的受控源的非線性函數，然後利用集成電路輔助分析軟體spice的abm （模擬行為建模）建立單電子晶體管（ set ） spice等效模型，利用set的等效模型對單電子晶體管v - i特性進行模擬，實驗證明此方法與直接解主方程法相比具有一定的精度。
  6. The fabrication of the nano - structures and the study of nanoelectronic devices ( single electron transistor - set, single electron memory, etc. ) are one of the most important projects of the nanoelectronics and nanotechnology, of a study field with most vitality, progressive future, and it may bring magnitude effect to new technology revolution and industry in future

    納米結構的制備和納米電子器件（單電子晶體管、單電子存儲器等單電子器件）的研究是納米電子技術中最重要的研究內容之一，是最具有生命力、最具有發展前途，對未來新技術革命和產業可能帶來革命性作用的研究領域之一。
  7. This paper presents a novel single phase aeronautical static inverter. a novel combining two - transistor forward converter is presented and applied in the front of three - level hysteresis current controlled inverter, and a single - phase 6kva aeronautical static inverter is developed

    本文介紹了一種新型的單相航空靜止變流器，電路通過一新穎雙管正激組合式變換器作為三態滯環控制電流型逆變器的直流輸入前級，成功研製出6kva單相航空靜止變流器。
  8. I - v testing of a single transistor has been carried out. the p - si film is prepared by ela, and electron mobility is calculated about 30cm2 / v

    對用激光晶化法制備的多晶硅薄膜所制備的p - si - tft單管進行了-測試，計算電子遷移率為約30cm ~ 2 v
  9. Single walled carbon nanotube ; chemical vapor deposition ; schottky barriers ; field - effect transistor

    單壁碳納米管化學氣相沉積肖特基勢壘場效應晶體管
  10. It is pointed out that there are some questions determining configuration of single transistor amplifier, the general method and common circuit are given

    摘要指出確定晶體管單管放大電路組態時存在的問題並進行了討論，給出確定的一般方法及單管放大電路的通用電路。
  11. According to the following design theory : the dsp calculates in real time and produces three phases spwm waves to control the on or off of the 6 igbts in ipm respectively. ipm then inverts the commutated single phase direct current ( insulated gate bipolar transistor ) into three phases alternating current. when modulated signals of spwm are changed, the on - off time of switches also changes, so as to the voltage and frequency of output signals

    本文提出了一種基於dsp （數字信號處理器tms320f240 ）的通用的三相間接變頻電源系統，利用分段同步調製法和混合查表法，實時計算不同頻率下的采樣周期、電壓幅值、輸出脈寬，產生雙極性spwm波形，經驅動放大後用于ipm （ intelligentpowermodule ）中的絕緣柵雙極型晶體管柵級驅動，以控制電源的輸出電壓和頻率，實現變頻電源的智能數字控制。
  12. Introduced the method of multi - transistor modular design, for the output ability are limited in single high - frequency power transistor

    介紹了因單個高頻大功率晶體管輸出能力有限而採用多管並聯運用（積木式）的方法。
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