source bias 中文意思是什麼
source bias
解釋
震源偏斜-
As a mix - mode chip, the application - specific controller including analog signal and digital signal processing block can be applied to receiving, amplifying, processing, controlling signals of pir, and offer a wide application in some fields. in analog circuits, by sub - threshold mosfet, a self - bias current source is presented, which has a high power supply restrain ratio and a complementary to absolute temperature characters
這款晶元是一款數模混合晶元，包括模擬信號處理（含模數介面模塊）和數字信號處理兩大模塊，完整實現對紅外信號的接收、放大、處理、控制，產生有效數字電平驅動繼電器、可控硅等負載，應用於自動燈等多種場合。 -
Source of electron gun grid bias
電子槍柵偏壓電源 -
Probably the best source for random numbers in common use is measuring radioactive decay. it s not at all easy to bias, and comes with relatively little natural bias
最後，我們將解釋如何在您自己的應用程序中建立防盜自動警報，以及侵入探測的現代方法可能對您有何幫助。 -
Comparing winners and also - rans from within the same countries, to avoid yet another source of bias, dr rablen and dr oswald found that the winners lived, on average, two years longer than those who had merely been nominated
通過比較來自同一個國家的獲獎者與落選者來避免另一種偏差，拉伯倫與奧斯瓦爾德博士發現獲獎者平均要比那些僅僅是得到提名的人的壽命長兩年。 -
In order to obtain similar deposition condition, very different bias must be applied to the substrate when the grounding of the arc source is different. at last, carbon films were deposited and their properties were measured
分析了這種現象產生的原因以及不同接地方式對沉積薄膜的影響，即當弧源接地狀態不同時，要獲得相似的沉積條件，給基片臺施加的負偏壓應有所不同。 -
Then a thorough analysis to the bias - magnetic of ppfc is made. the retraining effects of the main parameters ( include clamping capacitance c, output filter inductor lf, load r, the leakage inductor ls and source winding resistance r ) are studied under the conditions of different von, different ton and different winding parameters. then a conclusion can be drew, that the smaller lf and the bigger r are, the better the bias - magnetic is restrained and c has a best value to retrain the bias - magnetic
分別對管壓降不同，導通時間不同以及兩原邊繞組參數不一致（包括漏感、電阻、激磁電感三種情況）的情況下，主要參數（包括箝位電容c 、輸出濾波電感lf 、負載r 、原邊繞組漏感ls 、原邊繞組電阻r ）對偏磁的抑制作用進行了模擬分析研究，得出lf越小， r越大時激磁磁勢偏移量ni越小， c在其他參數確定時對抑制偏磁有最優值等結論，為參數的優化設計提供了依據。 -
The thesis has done the widespread investigation and study to the domestic and foreign ’ s technologies of analogy low voltage and low power, and analyzes the principles of work, merts and shortcomings of these technologies, based on the absorption of these technologies, it designs a 1. 5v low power rail - to - rail cmos operational amplifier. when designing input stage, in order to enable the input common mode voltage range to achieve rail - to - rail, it does not use the traditional differential input pair, but use the nmos tube and the pmos tube parallel supplementary differential input pair to the structure, and uses the proportional current mirror technology to realize the constant transconductance of input stage. in the middle gain stage design, the current mirror load does not use the traditional standard cascode structure, but uses the low voltage, wide - swing casecode structure which is suitable to work in low voltage. when designing output stage, in order to enhance the efficiency, it uses the push - pull common source stage amplifier as the output stage, the output voltage swing basically reached rail - to - rail. the thesis changes the design of the traditional normal source based on the operational amplifier, uses the differential amplifier with current mirror load to design a normal current source. the normal current source provides the stable bias current and the bias voltage to the operational amplifier, so the stability of operational amplifier is guaranteed. the thesis uses the miller compensate technology with a adjusting zero resistance to compensate the operational amplifier
本論文對國內外的模擬低電壓低功耗技術做了廣泛的調查研究，分析了這些技術的工作原理和優缺點，在吸收這些技術成果基礎上設計了一個1 . 5v低功耗軌至軌cmos運算放大器。在設計輸入級時，為了使輸入共模電壓范圍達到軌至軌，不是採用傳統的差動輸入結構，而是採用了nmos管和pmos管並聯的互補差動輸入對結構，並採用成比例的電流鏡技術實現了輸入級跨導的恆定;在中間增益級設計中，電流鏡負載並不是採用傳統的標準共源共柵結構，而是採用了適合在低壓工作的低壓寬擺幅共源共柵結構;在輸出級設計時，為了提高效率，採用了推挽共源級放大器作為輸出級，輸出電壓擺幅基本上達到了軌至軌;本論文改變傳統基準源基於運放的設計，採用了帶電流鏡負載的差分放大器設計了一個基準電流源，給運放提供穩定的偏置電流和偏置電壓，保證了運放的穩定性;並採用了帶調零電阻的密勒補償技術對運放進行頻率補償。 -
Second, since input bias currents are not always small and can exhibit different polarities, source impedance levels should be carefully matched to minimize additional input bias current - induced offset voltages and increased distortion
其次，因為輸入偏置電流不一定都小，且可能體現不同的極性，而且源阻抗水平應該仔細地進行匹配，以將輸入偏置電流引起額外失調電壓和增加的畸變減到最小。 -
Subcircuit models are designed and simulated, which includes bias current source, voltage reference, error amplifier, pwm comparator, driver circuit, protection circuits for over - temperature, over - current. at last, combined with periphery component, the circuit is simulated, and the result meets the anticipant requirement
並對集成電路內的各個模塊包括電流偏置電路、基準電壓電路、誤差放大電路、三角波振蕩發生電路、 pwm比較電路、驅動電路、過熱保護電路和過流保護等進行了具體的設計和模擬，並對整體應用電路進行了模擬，結果均達到了預先設定的指標。 -
Specifically analysed and presented the common - mode differential input stage, linear transconductance control circuit of input stage, current sum circuit, floating ab - class control output stage, the bias circuit of op amps and the bandgap reference current source circuit
具體對運放的共模差分輸入級、輸入級線性跨導控制電路、電流和電路、浮動ab類輸出級電路、運放的偏置電路和帶隙參考電流源電路進行分析設計。 -
This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition. we use the raman spectrum, ft - ir, afm and so on to study the dlc film. the result indicates : different bias voltage, frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films, we find high bias voltage, low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd
研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。 -
This machine adopts japanese pro - face touch screen and mitsubishi plc control technology. in addition, it is set with automatic gear - shifting vacuum gauge, a three - flow controller, side - installed heating tube, computer pid automatic temperature control, and two sets of flat magnetic controlled target, contra - variant magnetic - controlled power source, and contra - variant bias power with easy operation and top grade film layer. they are widely used in decorative film layer, and compound film layer in plating
該設備採用日本pro - face觸摸屏和三菱plc集中控制裝有電腦自動換檔真空計，三路流量控制器，邊裝式加熱管，電腦pid自動控溫，配備兩套邊裝式平面磁控靶，逆變式磁控電源和逆變式偏壓電源，操作簡單，膜層細膩，廣泛適用於鍍制各種裝飾膜層和復合膜層。
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