source ion 中文意思是什麼

source ion 解釋
離子源
  • source : n 1 源頭，水源，源泉。2 根源，本源；來源。3 原因；出處；原始資料。4 提供消息的人。5 血統。vt 〈美...
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  1. Investigation on coloration of metal - doped sapphire by mevva ion source

    離子源金屬摻雜藍寶石著色的研究
  2. Characteristics of rf ion source electromagnetic field

    型放電離子源的場特性
  3. Implantation homogeneity study on type - 100 mevva source ion implantor

    源注入機注入均勻性研究
  4. Study of nd silicides synthesis by mevva source ion implantation

    源離子注入合成釹硅化物的研究
  5. During ion source operating, alternating axial magnetic field and azimuthal electric field in discharge tube ionize hydrogen gas purified by hot palladium pipe, and form plasma, hi fifties year, research reports studied on rf ion source are numerous however most of them are concerned about application, and research reports relevant to discharge theory or experiment model are unfrequent

    離子源工作時，放電空間交變的軸向磁場和渦漩電場激發放電管中經鈀管純化后通入的氫氣電離，形成等離子體。 50多年來，關于高頻離子源的研究報告很多，但是，這些研究主要都集中在應用研究方面，有關高頻無極環形放電離子源的理論與實驗模型研究不是很多。
  6. Duoplasmatron ion source

    雙等離子體離子源
  7. Three typical ion source, radio - frequency ion source, duoplasmatron ion source and penning ion source, are usually used in neutron generator

    在通過d - t反應產生中子的低能倍壓加速器中，一般採用三種類型的離子源：高頻離子源（ rf ） 、潘寧離子源（ pig ）和雙等離子體離子源（ dp ） 。
  8. A vacuum interface used for atmospheric pressure ionization ion source was designed to couple with an orthogonal - injection electrospray ionization time - of - flight mass spectrometer ( tofms )

    摘要研製了一種大氣壓離子源真空介面，並已將其用於自製高解析度垂直引入式電噴霧電離飛行時間質譜儀。
  9. Construction of electrostatic accelerator rf ion source

    用於靜電加速器的高頻離子源的設計和調試
  10. ( 4 ) chapter vi. the theory of ion curren extraction of rf ion source is investigated, the reason of emission surface formation and its effect on ion curren extraction are reasearched emphatically

    （ 4 ）對高頻離子源的束流引出原理作了理論推導和分析，著重研究了發射面的形成及其對引出束流特性的影響。
  11. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  12. After 40 hour irradiation time, about 7 ci of radioactive isotope 64cu was produced via 63cu ( n, y ) 64cu reaction. after simple disposal, the irradiated copper sample was installed in the high - intesity ion sputter source on the hi - 13 tandem accelerator. then 64cu ions extracted from the high - intesity ion sputter source and injected into the tandem accelerator, 64cu ions can be accelerated to an energy of 80 mev and formed the off - line rnb since natural

    S ）的熱中於通量下，經過34個半衰期輻照，通過『 u … ， y ）生成放射性l司位素『 cll ，然後將放射性銅靶錐注入串列加速器強流濺射離于源中，引出mcll負離于，經刁串列加速器加速而得到能量為80mcv的離線放射性核束「 cll叭。
  13. Diamond - like carbon gradient film on ti6a14v alloy substrate have been prepared by means of plasma source ion implanted - ion beam enhanced deposition ( psii - ibed ). for potential applications as artificial joint materials and artificial cardiac valve materials, its trobological performance and hemocompatibility has also been evaluated in the present ph. d. thesis

    本研究採用等離子源離子注入?離子束增強沉積技術（ psii - ibed ）制備了鈦合金基類金剛石梯度薄膜材料，對類金剛石梯度薄膜這一新型人工關節材料和人工心臟瓣膜材料的生物摩擦學性能和血液相容性進行了研究和評價，研究了摩擦磨損對材料血液相容性的影響。
  14. The main conclusions are as follows : the hco3 - ion content of zhujiang river changes notably in one hydrological year, especially in wet season and dry season. as for the content of inorganic carbon, that of the xijiang river is the highest, then the beijiang river, and then the dongjiang river. the xijiang river ' s inorganic carbon source was major from karst process in the drainage basin

    得出如下的結論：珠江水體hco _ 3 ~ -離子含量在一個水文年中發生顯著變化，特別是豐水期與枯水期之間波動幅度較大；無機碳含量西江含量最高，其次是北江，東江最低；西江無機碳主要來源於巖溶作用，由於受河流沖刷效應影響，豐水期hco _ 3 ~ -離子含量升高；東江流域無機碳主要來源於硅酸鹽巖的碳酸鹽風化過程，豐水期hco _ 3 ~ -離子含量無顯著變化；北江無機碳來源於巖溶作用和硅酸鹽巖的碳酸鹽風化過程，受稀釋效應影響，無機碳含量隨水量增加而降低。
  15. Distribution of electromagnet field in the space of h - type rf ion source is worked out derivation from maxwell equations, and three - dimensional vector graphs of e and b in the space of rf ion source are calculated and plotted by mafia software

    並採用mafia軟體進行了三維實體建模，計算了高頻離子源放電擊穿前和穩定工作后的電磁場分佈，得到了高頻離子源放電空間電磁場分佈的直觀圖像。
  16. On - line measurement of microwave power in ecr ion source

    離子源中的微波功率在線測量
  17. ( ii ) charging effects on temporal and spatial evolution of dusty plasma sheath in plasma source ion implantation. the temporal and spatial evolution of a dusty plasma sheath in plasma source ion implantation has been investigated with a fluid theory and a self - consistent dust - charging model. a negative potential pulse is introduced to form the plasma sheath

    （ ）塵埃粒子的充電效應對等離子體源離子注入（ ps ）鞘層時空演化的影響採用流體模型及自洽的塵埃粒子充電模型，我們研究了等離子體源離子注入時的塵埃等離子體鞘層的時空演化。
  18. The results were summarized as follows : ( 1 ) diamond - like carbon films could be fabricated by plasma source ion implantation ; it was found that different parameters such as the negative voltage, frequency, gas flux influenced sp3 bond ratio of dlcs, the paper described the effect in details and showed that diamond - like carbon films with increasing negative voltage, reducing frequency, appropriate gas flux got high proportion of sp3 bond ; dlcs prepared by psii contained a good deal of sic, the composition affected its properties ( such as the films hardness ) ; psii method could offer good adhesion to dlcs, but it caused the surface morphology to become asperity

    研究結果表明： （ 1 ）用全方位離子注入技術能夠制備出類金剛石膜。在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓增加、頻率降低和適中的氣體流量可以制備出含sp ~ 3鍵較多的類金剛石膜；同時發現用全方位離子注入技術制備的類金剛石膜含有大量的sic成份，這對薄膜的性能（例如硬度）影響很大；用全方位離子注入制備的薄膜其結合力得到增強，但薄膜的表面形貌差。
  19. Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation

    附加電極半徑對空心圓管端點附近離子注入劑量的影響
  20. This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition. we use the raman spectrum, ft - ir, afm and so on to study the dlc film. the result indicates : different bias voltage, frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films, we find high bias voltage, low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd

    研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。
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