step annealing 中文意思是什麼
step annealing
解釋
階段退火-
Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation
結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。 -
The paper investigats modeling and optimizing problems of parallel machine scheduling with resource - constrained and multi - step working procedure, acting bell - type annealing of shanghai baosteel yichang sheet lt. co. as practical background, designs and develops scheduling production system which is optimized according to practical demand of annealing workshop
本文以上海寶鋼益昌薄板有限公司罩式爐退火過程為背景，研究了資源受限多步工序并行機器調度問題的建模和優化問題，結合退火爐車間生產調度的實際需要，進行了退火爐優化排產系統的設計和開發。 -
Quantum confinement effects of semiconductor nanocrystals cdsaiseo9 in glass abstract a series of cds0. iseo. 9 semiconductor nanocrystals embedded in silicate glass with different sizes have been fabricated by one - step and two - step annealing methods. the electronic state and optical properties of these nanocrystals also have been studied through room - temperature absorption spectra and electroabsorption spectra
本文用一步退火和兩步退火方法在玻璃基體中生長了一系列不同尺寸的cds _ （ 0 . 1 ） se _ （ 0 . 9 ）半導體納米晶體。對制備的納晶樣品作了室溫吸收光譜和電調制吸收光譜的測量，以此研究了納晶的電子結構及光學性質。 -
In this dissertation, nanometer zno thin films on si ( 100 ) substrates were prepared by using thermal evaporation technique following by two - step annealing process : high quality zno thin films and mgxzn1 - xo alloy films have been grown on si ( 100 ) substrates with mgo buffer layers by using thermal evaporation technique following by two - step annealing process
本文介紹了採用電子束蒸發方法在si補底上制備出了高純度的金屬鋅膜，然後通過二次退火得到了具有六角結構的高質量氧化鋅多晶薄膜材料，另外，還採用電子束蒸發mgo薄膜作為緩沖層二次退火金屬鋅膜的方法制備出了高質量氧化鋅多晶薄膜材料和mgzno合金薄膜材料。 -
The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried
採用等溫退火法（或稱「一步法」 ）沉積ceo _ 2 ，即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜，再在與沉積溫度相同的溫度下對薄膜進行退火處理，系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。 -
In the first step, effect of the target ' s components on properties of thin films was investigated. influences of tl2o partial pressure and thallination temperature on the component phases and properties of tl2ba2cacu2o8 hts thin films were studied in the second step of ex situ post annealing treatments
在濺射沉積前驅物薄膜的過程中，研究了靶材成分對薄膜性能的影響；鉈化后處理過程中，研究了tl2o分壓和鉈化溫度對tl2ba2cacu2o8高溫超導薄膜相組成及其性能的影響。 -
Thirdly, integrating bell - type scheduling investigation of domestic and overseas documents, the paper defines optimized scheduling production of bell - type annealing process as the problem of parallel machine scheduling with resource - constrained and multi - step working procedure, whose optimized function of objective function is given also. furthermore, the author constructs bell - type optimized scheduling model by means of the way combing discrete event simulation with algorithm of intelligent optimization
本文在綜合國內外對于罩式爐調度研究的基礎上，將罩式爐退火過程優化排產定義為資源受限多步工序并行機器調度問題，並定義了優化目標評價函數；將面向對象的離散事件建模模擬方法和智能優化方法相結合建立了退火爐優化排產模型。 -
The effect of high temperature in rapid thermal process ( rtp ) on the dissolution of oxygen precipitate generated by two - step ( low - high ) annealing is investigated
摘要通過對已經過兩步（低高）退火的大直徑直拉矽單晶片進行高溫快速熱處理，研究矽中氧沈澱被高溫快速熱處理消融的情況。 -
The main work includes four contents as follow : 1 ) the electrodes annealed in various temperatures were studied. with x - ray diffraction spectroscopy ( xrd ) and sims, the interfacial reaction is analyzed and a new two - step annealing method is suggested
研究了al單層電極及ti al雙層電極與藍寶石基gan在不同退火條件下的歐姆接觸情況，並用x射線衍射譜（ xrd ） ，二次離子質譜（ sims ）對界面固相反應進行了分析。 -
The experimental results show that the quality of zno films prepared by electron beam evaporation can be greatly improved by means of two - step annealing of metallic zn films in oxygen ambient, and it is feasible to fabricate high quality mgxzn1 - xo alloy films with mgo buffer layers by using thermal evaporation technique following by two - step annealing process. this method gives a new path to prepare mgxzn1 - xo alloy films
實驗結果表明利用電子束蒸發技術制備的zno薄膜材料，在經過氧氣氣氛下的二次退火處理后，能夠表現出較好的發光和結構特性；以mgo薄膜作為緩沖層制備出了高質量的mgzno合金薄膜材料，這為開展mgzno合金薄膜材料的研究開辟了新的途徑。 -
The results indicates that superconducting mgb2 thin films can be prepared by hfcvd in a single - step with the maximum critical transition temperature tc of 36k ; the best critical transition temperature tc of thin films grown by hpcvd in a single - step is 34k. the optimal zero resistance temperature tco of thin films fabricated ex situ is 37 k by post - annealing of precursor b film at 800 for 1 h under high mg vapor pressure
實驗結果表明，用hfcvd法在400原位制備了臨界溫度為36k的mgb2超導薄膜；用hpcvd法在700原位制備了臨界溫度為34k的mgb2超導薄膜；將300制備的前驅物b膜在mg蒸氣中800保溫1h非原位退火，制備了臨界溫度為37k的mgb2超導薄膜。
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