strained structure 中文意思是什麼
strained structure
解釋
金屬應變組織-
In this paper, the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation, thus the carrier effective mass and scattering rate can be obtained. furthermore, taking account for the carrier density in each subband, we establish carrier mobility model in strained - si mosfet
本文通過求解自洽薛定諤方程，確定了應變硅mosfet反型層的子能帶結構，在此基礎上經進一步計算得到子能帶內載流子的有效質量和散射幾率，綜合考慮各子能帶上的載流子的濃度分佈，建立了應變硅mosfet載流子遷移率的解析模型。 -
Influence of strain on subband structure is described by a factor dk, which is the phonon induced band deformation potential extracted from experiment data. in strained si conduction band, the value of dk is 2. 4 times larger than its si counterpart
在該模型中，應力對子能帶結構的影響通過聲子的形變勢能dk表示， dk為經實驗修正得到的經驗參數，在應變硅導帶中，其值是體硅材料形變勢能的2 . 4倍。 -
Mri scanning, developed in this very building ; the contraceptive pill ; modern infertility treatment ; ultrasound scan for unborn babies ; unlocking the double helix structure of dna ; keyhole surgery ; placing fluoride in the water supply ; the portable defibrillator ; the hepatitis b vaccine ; strained quantum - well lasers which contain the information used in cds, dvds and the internet ; dna fingerprinting. a whole speech could be given that amounted to nothing more than a list of examples
正是在牛津這個地方研究和開發出來的核磁共振掃描、避孕藥、現代不孕癥治療術、胎兒超聲波檢查、解開dna雙螺旋結構之謎、鎖孔外科手術、在供水系統中加氟、便攜式心臟除顫器、乙肝疫苗、在cd 、 dvd光盤上存儲信息的應變量子阱激光器、 dna指紋識別技術等。 -
After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide
其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。 -
Physics device model, component structure design and fabrication technology are discussed based on the thorough analysis of strained silicon and soi physics mechanism. the detail contents are as follows. the analytical threshold voltage model, drain current model and transconductance model are derived from poisson ’ s equation for the fully depleted strained soi mosfet
本論文圍繞這一微電子領域發展的前沿課題，在深入分析應變硅和soi物理機理的基礎上，對器件的物理模型、器件結構設計和工藝實驗等問題作了研究，主要包括以下幾部分:首先，從器件的物理機制出發，建立主要針對薄膜全耗盡型器件的閾值電壓、輸出電流和跨導模型。 -
However, ingaas strained - layer single quantum well lasers, optimized for low threshold current and low series resistance, have a highly elliptical beam structure emanating from the laser facet
但是報道的技術中多是針對圓對稱光束或近圓對稱光束。 -
The structure of the strained quantum well laser has been optimized, not only the well layer, the barrier layer, the waveguide layer and the cladding layer but also the content of al, in have been studied and designed
對應變量子阱激光器的結構進行了優化設計，對半導體激光器的阱層、壘層、波導層和限制層的厚度及in 、 al元素的含量進行了研究和設計。 -
For being with many advantages, it has been an active subject in recent years and much progress has been made. on the basic of analysis of many kinds of led structures, a new kind of strained layer structure has been introduced into our designed hb - led which has been manufactured in our laboratory to demonstrate a even higher efficient light emission. through calculation of led external quantum efficiency, a method for design hb - led top layer was evaluated
本論文分析了當前國內外各種led的結構及其製作工藝，在技術上較為成熟的雙異質結構基礎上，我們在器件的有源區引入應變多量子阱結構，並根據實際需求增加補償應變技術以保證發光層結構的穩定性；通過對器件外量子效率的計算，使得在器件設計有了定量的理論分析依據；並採用先進的渦輪lp - mocvd成功制備出galnp gaalinp應變多量子阱高亮度發光二極體器件。
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