stress annealing 中文意思是什麼

stress annealing 解釋
消除應力退火
  • stress : n 1 壓力,壓迫,緊迫,緊張。2 【語音】重音;重讀;【詩】揚音;語勢,著重點。3 重要(性),重點,...
  • annealing : 熱處理
  1. C. j. tsai and k. h. yu, " stress evolution during isochronal annealing of ni / si system " ; thin solid films, 350, 91 ( 1999 )

    郭升鑫、蔡哲正,在鈷/鈦/矽與鈷/鎳/矽系統不同中間層對鈷矽化物生成的影響,興大工程學刊,第十一卷,第一期、 53頁, 2000
  2. The zn / o ratio, c - axis orented and stress were improved by annealing, and also redusing the defect of zno flim, increasing the size of grain. but too high annealing temperature was adverse to recrystallization of zno thin film

    退火能改善zno薄膜的鋅氧比、 c軸的擇優取向和應力狀態,減少薄膜中的缺陷,使晶粒長大,但是過高的退火溫度不利於zno薄膜的重結晶,使zno薄膜的質量變差。
  3. Influence of annealing conditions on stress impedance effect of fecunbsib amorphous alloy strip

    非晶帶材應力阻抗效應的影響
  4. Stress relief annealing

    消除應力退火
  5. The alloys, which were cold - worked followed by recrystallization annealing, display cyclic softening in the range of low strain because the cyclic stress - strain curve lies below the monotonic stress - strain curve, and show cyclic hardening in the range of high strain because the cyclic stress - strain curve lies above the monotonic stress - strain curve

    在低應變范圍,冷加工后經再結晶退火處理的錯合金的循環應力一應變曲線位於單調拉伸曲線的下方,表現為循環軟化;在高應變范圍則位於單調拉伸曲線的上方,表現為循環硬化。
  6. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示,對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝,應用於重摻硼樣品時沒有潔凈區形成,所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片,硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍:直拉重摻硼硅單晶中氧沉澱的研究促進效果;大量空位的引入,有利於釋放氧沉澱生長過程的內應力,適當增加重摻硼樣品氧沉澱密度,減少其尺寸,並伴有層錯生成。
  7. Secondly, the following two subjects are discussed according to the calculation of short - circuit current : ( l ) to verify the dynamic stability condition of wires by using simulated annealing algorithm ( sa ), the paper calculates the maximum value of rectangle wires " short - circuit electrodynamic stress and gets the conditions of their having the maximum value. furthermore, some concerned data about the verifying of copper wires are given by analysing vibration spectrum of the electrodynamic stress ; ( 2 ) in order to get the heat withstand conditions of wires, the paper discusses some common calculation methods, and then tries to study the problem applying artificial neural network ( ann ) based on heat principle of metals. the model is shown to be feasible

    其次,在電路中短路電流計算的基礎上, ( 1 )進行母線的短路動穩定校驗計算:採用模擬退火演算法( sa演算法)計算了矩形母線短路電動力的最大值及其取極值的條件,獲得了更為一般的結果,進而通過短路電動力的頻譜分析,給出了銅質母線的有關短路校驗計算數據; ( 2 )進行母線的短路熱穩定校驗計算:討論了熱穩定校校的幾種常用計算方法,從導體或電器的發熱機理出發,運用人工神經網路理論對母線的熱穩定問題進行計算,通過算例比較,證明該方法用於熱穩定計算是可行的。
  8. And is applied the annealing treatment to eliminate internal stress. therefore, this machine has very strong rigidity. the slide rail of

    本機機體採用fc25以上之鑄鐵造而成,並經退火內應力消除處理,剛性特強,
  9. First, based on comprehension analysis of the present study status on optimizing method to displacement back analysis in underground engineering home and abroad, intelligent optimizing method, which fits the features of underground engineering, has been developed by introducing annealing algorithm and genetic algorithm and improving them. second, according to practical features of nonlinear displacement for underground engineering, the mechanical model on back analysis to initial ground stress and mechanical parameters of surrounding rock mass in underground engineering is established, which is based on the measuring results of displacement of convergence in underground holes. while, by introducing finite element method and combining improved annealing algorithm and improved genetic - annealing algorithm, the theory and method of elastic - plastic displacement back analysis to surrounding rock in underground engineering has been founded

    首先,本文在綜合分析國內外地下工程優化位移反分析方法研究現狀的基礎上,引進模擬退火與遺傳演算法,並對其進行改進,建立了適合於地下工程問題特點的智能優化演算法;其次,根據地下工程非線性特點,基於地下工程洞周收斂位移量測結果,建立了用於地下工程初始地應力與圍巖力學參數反演分析的力學模型,並引進有限元分析手段,結合改進模擬退火演算法與改進遺傳-模擬退火演算法,分別建立了基於這兩種智能優化演算法的地下工程圍巖彈塑性位移反分析理論與方法,並開發了相應的分析計算程序,為地下工程圍巖穩定性與開挖順序優化分析奠定了基礎;然後,在上述基礎上,根據地下工程開挖施工順序優化設計的特點,建立了基於圍巖塑性區面積的地下工程開挖施工順序優化分析模型,基於改進模擬退火演算法與改進遺傳-模擬退火演算法建立了地下工程開挖施工順序優化分析方法,並開發了相應的分析計算程序;最後,將上述分析計算程序用於工程實例分析,探討了其應用方法,證明了該文研究成果的合理性和可靠性。
  10. As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence

    這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加,同時pl強度在l戶800有一個大的增強。這個結果提示我們,界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。
  11. Stress relieving annealing temperature

    應力退火溫度
  12. In contrast, the lcmo thin films grown on lao substrates show an in - plane compressive stress. the afm images suggest that at the annealing temperature range between 650 and 750, with the annealing temperature increase, the grain sizes increase, the rms increase

    沉積在sto基片上的lcmo薄膜在面內方向受張應力作用,垂直方向上的晶格常數相對縮小,沉積于lao基片上的lcmo薄膜在面內方向受壓應力作用,垂直方向上的晶格常數相對增大。
  13. The film stress decreased with increasing annealing temperature, while increases with increasing oxygen argon ratio

    薄膜應力隨著退火溫度的增加而減小,隨著氧氬比的增大而增大。
  14. After annealing, the refractive index of the film decreases. and, the annealing process release the stress of the films, which give the film a higher density

    退火使薄膜的折射率將低,釋放膜層中的應力,膜層結構更加緻密。
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