subthreshold 中文意思是什麼

subthreshold 解釋
adj. 形容詞 （藥劑量）次於最低限度的，不足以起作用的。

  1. We have studied pharmacodynamics of valepotriates through observing its effects on the times of spontaneous motion in mice, the sleep time of sodium pentobarbital ( superthreshold doses ), sleep rate of sodium pentobarbital ( subthreshold doses ), the number of writhes induced by acetic acid and seizures rate of metrazol. the experiment results proved that valepotriates could significantly decrease the times of spontaneous motion, prolong the sleep time of sodium pentobarbital ( superthreshold doses ), enhance the sleep rate of sodium pentobarbital ( subthreshold doses ), reduce the number of writhes induced by acetic acid and reduce the seizures rate of metrazol, so it showed high central inhibition effect, thus offer scientific foundation for its further exploitation and utilization

    通過研究蜘蛛香中總纈草素對小鼠自發活動的影響、對戊巴比妥鈉睡眠時間的影響、對戊巴比妥鈉閾下劑量的影響、對小鼠扭體反應的影響、對戊四氮誘發驚厥的影響發現：總顆草素能明顯抑制小鼠的自主活動，顯著延長戊巴比妥鈉致小鼠睡眠時間，明顯提高閾下劑量戊巴比妥鈉小鼠入睡數，對抗戊四氮誘發的小鼠驚厥，顯示出較好的中樞抑制作用，為蜘蛛香的進一步研究開發提供了科學依據。
  2. The experiments on the effects of the uniform magnetic field in mice autonomic action and nembutal subthreshold - hypnosis was carried out. the results showed that the field had definite effects of sedation and hypnosis

    用均勻交變磁場對小白鼠的自主活動及戊巴比妥鈉閾下催眠影響進行了實驗研究.結果表明，所用磁場具有一定的鎮靜、催眠作用
  3. Subthreshold micropulse diode laser treatment of macular edema

    閾下微脈沖半導體激光治療黃斑水腫
  4. A review of the researches about the subthreshold priming on the judgments of metamemory

    閾下啟動與元記憶判斷研究綜述
  5. The study shows that the impact of incomplete ionization on sic mosfet is more notable in subthreshold region than in strong inversion region

    對于sicmosfet ，雜質不完全離化的影響主要在亞閾區。
  6. The results of the analysis show that the impact of incomplete ionization on sic mosfet is more notable in subthreshold region than in strong inversion region

    分析結果表明不完全離化對sicmosfet的影響主要集中在亞閾區。
  7. Under self - heating stress, a general degradation in subthreshold characteristic was observed, which is the consequence of defect generation along overall channel

    這主要是由於在自加熱應力下，整個溝道中都出現了缺陷態的產生，從而使器件的亞閾值擺幅發生了退化。
  8. When the input noise is the single - peak gaussian noise, the noise can improve the signal correlation only for the sub - threshold signal, i. e. subthreshold stochastic resonance ( sr ) exists

    當輸入噪聲為單峰高斯噪聲時，輸入信號在閾下時噪聲才能改善信號的相關性，即隨機諧振現象存在。
  9. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  10. However, when the input noise is the double - peak gaussian mixture noise, the noise can improve the signal correlation for the subthreshold signal and the suprathreshold signal, i. e., both sr and suprathreshold stochastic resonance ( ssr ) often occurs

    而當輸入噪聲為雙峰高斯混合噪聲時，不僅輸入信號在閾下時隨機諧振現象有時存在，而且輸入信號在閾上時噪聲往往也能改善信號的相關性，即閾上隨機諧振現象存在。
  11. Results the results showed that the water extract of fructus schisandrae chinensis could markedly inhibit spontaneous motion, enhance the sleeping number of pentobarbital sodium ( subthreshold dosage ) and prolong the sleeping time of pentobarbital sodium ( superthreshold dosage )

    結果北五味子水提取物能明顯減少小鼠自主活動次數，增加閾下劑量戊巴比妥鈉致小鼠睡眠只數，延長閾上劑量戊巴比妥鈉致小鼠睡眠時間。
  12. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  13. Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel, the quasi - two - dimensional analysis methods are used to deduced the drain current, threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6. 0 simulation output. the degradations of device output conductance, subthreshold conduction and rf characteristics are also analyzed

    針對mos器件熱載流子退化所引入的界面態，根據其沿溝道非均勻分佈的模型，採用準二維分析方法對退化后器件的漏源電流、閾值電壓和飽和區溝道電場作了詳細的理論推導，並與實驗結果和器件二維數值模擬軟體minimos6 . 0的計算結果進行了驗證比較。
  14. The dominance and properties of the cmos integrated reference were also described, and the research meaning was pointed out. related device theory and process model used in design were described. the temperature related model and the influencing factor of two active devices, subthreshold mosfet and pnp substrate transistor, based on cmos process were analyzed and compared, and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference

    闡述了設計中相關的器件理論與工藝模型，對cmos工藝下的兩種有源器件，即亞閾值工作狀態下的金屬場效應晶體管（ mosfet ）及襯底pnp雙極型晶體管（ bjt ）的溫度模型及其影響因素進行了分析和比較，指明襯底pnp雙極型晶體管更適合作為基準源的溫度補償元件。
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