surface doping 中文意思是什麼

surface doping 解釋
表面摻雜
  • surface : n 1 表面;地面;水面;廣場,空地。2 外觀,外表,皮毛。3 【幾】面;切口;【航空】翼面。adj 表面的...
  • doping : 半導體中的攙雜質
  1. On the base of these theory calculations, we passivated the front - surface both of different surface doping concentration solar cells by a thin layer of thermally grown sio2. the results show that the in heavy surface doping concentration cell is lower compared to the cell in light surface doping concentration. the majority of improvement in comes from the emitter surface passivation

    接著採用sio2作為鈍化膜,從實驗上比較了在不同表面濃度下單晶硅太陽電池的鈍化效果,結果表明在高表面濃度下其開路電壓比低表面濃度下的開路電壓低,這開路電壓的提高主要來源於降低了前表面復合。
  2. In this dissertation, refining grains, depositing conductibility carbon film on the surface of the particles and doping mg ~ ( 2 + ) into the lattice of lifepo4 were adopted to improve the electro - chemical performance of the cathode material. the cathode material lifepo4 mainly has two flaws, the low conductibility and the slow li + ion diffusion, which have a bad influence on the performance of the cathode material

    論文主要針對制約正極材料lifepo _ 4性能的兩大致命的缺點,即低的電子導電率和低的鋰離子擴散速率,採取材料顆粒的細化、顆粒表面沉積碳導電層以及mg ~ ( ~ ( 2 + ) )離子摻雜等措施對其進行改性探索,以提高正極材料lifepo _ 4的電化學性能。
  3. The components, microstructure, luminousness, thickness and surface topography of the films were analysised via xrd, uv ? vis, xps, ellipsometric examination and stm. the photocatalytic properties of these fims are characterized by the decomposition rate of methylene blue or rhodamine b. the effect of sputtering power, temperature, o2 mass flow, bias, w - doping and sputtering time on photocatalytic properties are discussed

    採用x射線衍射儀、紫外-可見光分光光度計、 x光電子能譜儀、薄膜厚度測試儀及掃描探針顯微鏡等測試手段,研究分析了薄膜的組分、結構、透光率、膜厚和表面形貌等。
  4. Then we studied the effect of junction uniformity on the aluminum - alloyed back surface field to solar cell performance. the formation theory of aluminum - alloyed back surface field, the effect parameters to the doping concentration and the junction depth were analyzed

    比較了兩種商業太陽電池的雜質濃度分佈及結深情況;敘述了鋁背場的作用及形成原理,對影響鋁背場表面濃度和結深的參數作了分析。
  5. The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface

    實驗研究了快速熱擴散( rtd ) :通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性,發現: 1 )此樣機的溫度場在空間分佈上是均勻的; 2 )快速熱擴散可以比傳統擴散快3倍的速度進行擴散; 3 )在擴散溫度和摻雜磷源相同的條件下,與傳統擴散相比,快速熱擴散將雜質向結更深的地方推進。
  6. We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism

    我們採用原子力顯微鏡( afm )方法觀察薄膜的顯微結構,利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論,認為400的襯底溫度對硅襯底薄膜是合適的,與結構分析的結果一致。通過對薄膜磁性能的分析和研究,我們得出一些有意義的結果:適量過渡金屬離子fe 、 co摻雜的zno薄膜,在室溫下具有鐵磁性,而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值,而且結構最好的薄膜磁性不一定最好。
  7. This kind of catalyst was very fine, with strong interaction between the support and the active component particle, and high dispersion of such particles on the surface of the support. yield of carbon nanotubes can also be improved greatly by the doping of molybdenum to catalyst

    本文所採用的檸檬酸法瞬時燒爆工藝制備的催化劑,顆粒小,載體與活性組分接觸好,活性組分分散均勻,可望實現單壁納米碳管的大規模製備。
  8. For ti doped surface, in most cases, the doping states

    對于未摻雜表面,吸附氫后,表層橋氧原子將缺失。
  9. Further investigations show that new surface states are derived by the doping, which may lead to the changes of the surface properties of sno _ 2 ( 110 ). it seems that the type of doping atom has great effects on the positions of doping states

    值得注意的是, ti摻雜對co吸附影響較小,而摻雜ru原子可顯著增強表面對co的吸附,尤其是五配位sn原子被ru取代后,具有最大的吸附能。
  10. Ohmic contacts on h2 - thermally - treated 6h - sic surface by evaporating aluminum without annealing have contact resistances of 8 10 - 3 - cm2 on room temperature and keep fairly good thermal stability under the temperature of 400. its ohmic properties do n ' t depend on the doping concentrations of the substrate, which enables us to form ohmic contacts on low dropped substrate especially on epitaxial layer

    通過氫氣處理6h - sic表面並鍍鋁后直接形成的歐姆接觸室溫比電阻率達到8 10 ~ ( - 3 ) ? cm ~ 2 ,溫度不超過400時該接觸具有較好的穩定性,其歐姆特性不依賴于襯底的摻雜濃度,是一種適宜在低摻雜襯底特別是sic外延片上制備歐姆接觸的有效方法。
  11. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題,本文根據科學院創新工程研究工作的需要,開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究,獲得的主要結果如下:系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響,發現多孔硅與襯底並不是嚴格的四方畸變,在多孔硅/硅襯底的界面上,多孔硅的晶格與襯底完全一致,但在孔的邊緣,多孔硅的晶格發生弛豫。
  12. It had many great merits such as excellent optical properties, low - cost and easiness to handle which offered promising prospects in the filed of self - cleaning, anti - fog and so on. the hydrophilicity of tio2 was influenced by many factors such as crystal structure, surface morphology, band gap, etc. preparing method and doping element would take effect on the properties of the film

    Tio _ 2薄膜的親水性能受到結構形貌及其禁帶寬度的影響,銳鈦礦相的tio _ 2具有最好的親水特性;平整均勻的表面不僅有利於水的鋪展,而且透光率高,適于玻璃鍍膜;薄膜禁帶寬度降低有利於提高光能的利用率。
  13. The doping of europium did not induce any new luminescent centers, but caused the luminescent efficiency of defects to increase greatly. 4. by changing the rinse times during the synthesis of zns nanocrystallite, the surface state was studied

    4通過改變zns納米晶制備過程中清洗的次數,比較了清洗前後發光強度的變化,分析了自激活發光中心在納米晶中的分佈狀況,即自激活發光中心傾向于占據表面格位。
  14. ( 2 ) doping a little of ag to tio2 film is good for increasing the content of hydroxy and bridging oxygen on the film surface, and improving the photocatalytic activity and hydrophilicity. but the hydrophilicity decreases as the doping ag increases to a certain content. the surface bridging oxygen has a larger impact on the film hydrophilicity than the hydroxy

    3 、在本文所研究的膜材料及膜結構中, tioz / ( tio2一a1203一sno戶復合疊層膜與同等條件下制得的純tio :膜及其它所薄膜相比,既具有高的光催化活性,又具有優良的超親水特性,這是本論文最重要的研究結果。
  15. The regulation of acid catalytic property of molecular sieve can be realized via surface modification of mesoporous molecular sieve by means of introducing doping metals into skeleton or loading active species onto matrix during synthesizing precursor for mesoporous molecular sieve

    在合成介孔分子篩的前驅物中摻雜其他金屬元素而將其引入骨架或將活性組分負載到介孔分子篩的基體上,可以實現對介孔分子篩表面進行表面修飾與改性,以調變分子篩表面的酸催化性能。
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