switching transistor 中文意思是什麼
switching transistor
解釋
開關晶體管- switching : 變換
- transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
-
In all interleaving two - transistor forward switches, zero voltage switching can be obtained which can apparently improve the power density. however the isolated boost converters need to resolve two problems
但是隔離boost變換器需要重點解決兩個問題: 1 ）減小功率開關關斷時兩端浪涌電壓; 2 ）隔離boost變換器的起動。 -
Transistor is viewed as a very important amplification and switching device in micro - electric field
晶體管可以說它是微電子中非常重要的器件，它最主要的功能是電流放大和開關作用。 -
The interleaving two - transistor forward converter succeeds to the advantages of the two - transistor forward converter, it has two units working alternately, the power loss of the converter is distributed and the output voltage ripple frequency is twice of the switching frequency
交錯並聯結構式的雙管正激變換器，繼承了雙管正激變換器的優點，兩個並聯單元互補工作，分擔了功率損耗，等效占空比擴大了一倍，輸出電壓的脈動頻率變為功率管開關頻率的兩倍。 -
Semiconductor discrete device. detail specification for type 3dk40 power switching transistor
半導體分立器件. 3dk40型功率開關晶體管詳細規范 -
Semiconductor discrete device. detail specification for type 3dk39 power switching transistor
半導體分立器件. 3dk39型功率開關晶體管詳細規范 -
Semiconductor discrete device. detail specification for type 3dk312 power switching transistor
半導體分立器件. 3dk312型功率開關晶體管詳細規范 -
Semiconductor discrete devices. detail specification for type 3dk002 power switching transistor
半導體分立器件. 3dk002型功率開關晶體管詳細規范 -
Semiconductor discrete devices. detail specification for type 3dk404 power switching transistor
半導體分立器件. 3dk404型功率開關晶體管詳細規范 -
Semiconductor discrete device. detail specification for type 3dk406 high - voltage and power switching transistor
半導體分立器件. 3dk406型高壓功率開關晶體管詳細規范 -
Semiconductor discrete device. detail specification for type 3dk100 npn silicon low - power switching transistor
半導體分立器件. 3dk100型npn硅小功率開關晶體管詳細規范 -
Semiconductor discrete device. detail specification for type 3dk106 npn silicon low - power switching transistor
半導體分立器件. 3dk106型npn硅小功率開關晶體管詳細規范 -
Semiconductor discrete device. detail specification for type 3dk6547 high - voltage and power switching transistor
半導體分立器件. 3dk6547型高壓功率開關晶體管詳細規范 -
In this paper, a phase shifting pulse width modulated ( pwm ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi - conductor device - insulated gate bipolar transistor ( igbt )
本文採用最新的逆變思想與新型的開關器件?絕緣柵型雙極晶體管（ igbt ） ，研製出了移相式pwm軟開關高壓逆變電源。逆變技術發展至今，已經逐漸向大功率方向發展。 -
Transistor switching circuit
晶體管開關電路 -
Serial - parallel combined two - transistor forward converter is presented for high input voltage and high power application, and the operation principle of the topology is analyzed in this paper. all switches are turned off with zero voltage switching, and the two switches of them are turned on with zero current and zero voltage switching. the difference of input capacitances, conducting voltage drop of switches, duty cycle and windings of the transformer of the combined converter influences the voltage balance of the input capacitors
本文介紹了雙管正激變換器的兩種穩定工作狀態，詳細分析了帶lcd無損箝位網路的並?並組合式雙管正激變換器的工作原理，該組合式變換器中的開關管實現了零電壓關斷，並介紹了該電路拓撲的特點和lcd網路參數設計，採用pspice軟體進行了模擬和分析，最後，研製出一臺2 . 3kw樣機。 -
Switching time of the new type transistor is shortened 3 times
新型晶體管的開關時間縮短為三分之一 -
The switching time of this new transistor reduced three times
這種新晶體管的開關時間將縮短三分之二。 -
Switching time of the new - type transistor is shortened five times
新型晶體管的開關時間縮短了五分之四。 -
The switching time of the new - type transistor is shortened three times
新型晶體管的開關時間縮短了三分之二。 （或- - -縮短為三分之一。 ）
分享友人