tem micrograph 中文意思是什麼

tem micrograph 解釋
透射電子顯微鏡顯微照片
  • tem : 登
  • micrograph : n. 微寫器;【物理學】微動擴大測定器;顯微(鏡)制圖[照相、照片]。
  1. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡( sem ) 、透射電境( tem )等分析技術,對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態,形核與熱處理溫度、時間的關系等進行了研究。
  2. Finally build the foundation to prepare the composites of structure and m - type ferrite with structure and function properties. the constituent phases, microstructure and crystal dimension and crystal coalescence, mechanical properties, magnetic properties of the composites were investigated by means of x - ray diffraction ( xrd ), scanning electron micrograp h ( sem ) and transmission electron micrograph ( tem ), mechanical testing instrument, vibrating sample magnetometer ( vsm ) respectively

    採用xrd技術鑒定復合材料的物相,利用sem , tem來分析srfe12o19及其復合材料的結構形貌,顆粒大小及結合情況,使用伺服材料實驗機、洛氏硬度計及振動樣品磁強計( vsm )測試了復合陶瓷的抗彎強度、硬度及其磁性能,並探討它們之間關系。
  3. For xrd, ellipsometry examinations, single - side - polished si ( lll ) wafers were used as substrates and for resistance measurement, glass was used and for infrared examination, double - side - polished si ( lll ) wafers were used and for ultraviolet - visible spectrophotometry, double - side - polished quartz wafers were used and for tem micrograph and electron diffraction pattern observation, cu nets deposited by formvar film were used. the cu - mgf2 cermet films were from 50 to 600nm thick

    用於xrd分析、橢偏測量的單拋si ( 111 )晶片和電阻測試的載玻片上淀積膜厚約為600nm ;用於ir測試的雙拋si ( 111 )晶片和uv測試的石英玻璃片上淀積膜厚約為250nm ;用於透射電鏡分析的樣品則淀積在400目銅網上的支撐formvar膜上,膜厚約為50 100nm 。
  4. Xrd, transmission electron micrograph ( tem ) and polarized optical micrograph ( pom ) were used to measure the structure of nanocomposites, the nonisothermal crystallization kinetics of pp / pp - g - mah / org - mmt was studied by differential scanning calorimetry ( dsc ), and their mechanical properties were tested

    採用熔融插層法制備了聚丙烯接枝物蒙脫土納米復合材料,通過xrd 、 tem 、 pom和dsc研究了納米復合材料的結構及結晶動力學,並測試其力學性能。
  5. Polyethylene ( pe ) / pe - g - mah / org - mmt nanocomposites were prepared by melt intercalation. xrd, and transmission electron micrograph ( tem ) were used to measure the structure of nanocomposites, the nonisothermal crystallization kinetics of pp / pp - g - mah / org - mmt was studied by differential scanning calorimetry ( dsc ), and their mechanical properties were tested

    採用熔融插層法制備了聚乙烯接枝物蒙脫土納米復合材料,通過xrd 、 tem和dsc研究了pe pe - g - mah org - mmt納米復合材料的結構及結晶動力學,並測試其力學性能。
  6. High quality znsxse1 - x thin film grown at the optimized temperature had the smoothest surface with lowest rms value of 1. 2 nm and tem cross - sectional micrograph showing a well defined columnar structure. the dependence of substrate temperature, deposition rate and alloy composition to the structure of the film was discussed in the thesis. the developed theory named " quasi - structure area mode " can successfully explain the film growth mechanism of polycrystalline znsxse1 - x thin films deposited on ito substrate by mbe

    研究了採用mbe系統沉積zns _ xse _ ( 1 - x )多晶薄膜的生長機理,分析了襯底溫度、沉積速率及薄膜組分對薄膜微結構的影響,提出的「類結構區域模型」可以較完整地解釋ito襯底上zns _ xse _ ( 1 - x )多晶薄膜生長的機理。
  7. Nanocrystalline cerium ( iv ) oxide ( ceo2 ) powders were prepared by means of different methods, sol - gel method, precipitation method and electrochemical method. the powders were analyzed by using x - ray diffraction ( xrd ) and transmission electron micrograph ( tem ). ceo2 powders in different ways were compared from shape of particles and preparation technics

    本文主要採用液相法中的溶膠-凝膠法、均勻沉澱法和電化學法制備了ceo _ 2納米粉體,通過x -衍射、透射電子顯微鏡等手段對所制備的納米粒子進行了表徵,並從粒子的形態及制備工藝上進行了比較。
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