temperature defect 中文意思是什麼

temperature defect 解釋
反應性溫度筐
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • defect : n. 1. 缺陷，缺點，弱點；短處。2. 不足，缺乏。vi. 叛變；逃走。 He defected to the West. 他叛逃到西方。
  1. They can also be used for fiber sizing, textile finishing, the reinforcing agent for cement and ceramics, and the preparation of various kinds of latex paints, and all kinds of special adhesion agents. the products of vinyl acetate - acrylic ester copolymer emulsion, which have overcome some defect of homopolymerized products, are newly developed. the modified emulsion has stronger water resistance, better flexibility, and lower glass state temperature

    醋-丙共聚系列乳液產品是針對均聚產品的某些缺陷而發展起來的新膠種，它通過醋酸乙烯與丙烯酸脂類共聚改性，提高膠粘劑的耐水性和柔韌性，降低共聚物的玻璃化溫度，使產品對一些均聚乳液難以粘接的材料具有良好的粘接性能，主要產品有：寶麗板膠鋁箔紙膠塑板膠等。
  2. The zn / o ratio, c - axis orented and stress were improved by annealing, and also redusing the defect of zno flim, increasing the size of grain. but too high annealing temperature was adverse to recrystallization of zno thin film

    退火能改善zno薄膜的鋅氧比、 c軸的擇優取向和應力狀態，減少薄膜中的缺陷，使晶粒長大，但是過高的退火溫度不利於zno薄膜的重結晶，使zno薄膜的質量變差。
  3. However, all of them had the same insuperable problem that the epitaxy of gan thin film had to be happened in high temperature no less than 1000 c. as a result, impurity as well as structure defect will be induced

    上述方法均面臨一個問題，那就是gan薄膜的生長要在約1000的溫度下進行，其結果是造成晶格結構缺陷的產生。
  4. Polypropylene ( pp ) is one of the popu1ar plastic that has been applied wideiy. but its defect of upper brittleness at low temperature restricts further application of polypropylene

    聚丙烯（ pp ）作為通用塑料的一個大類，在各個領域得到了廣泛的應用，但pp的耐沖擊性較差，限制了其使用范圍。
  5. The shorter the interval between the two pulses of the current wave, the fewer strikes the varistors can endure. at the same time, the dc ljima changes fast - slowly - fast alone with the experiment continuing. microstructual disorder, such as variations in the height of the electrostatic potential at grain boundaries and electrode protrusions into the zinc oxide varistors, causes substantial temperature rise in a microscopic region around the defect and is the source for failure

    雷電的多重閃擊對雷電過電壓保護器件的影響更加嚴重，本文首次採用不同間歇時間雙脈沖電流沖擊對氧化鋅電阻進行了多次試驗，試驗表明：氧化鋅電阻在雙脈沖電流沖擊下更容易出現老化破壞現象，間歇時間越短，電阻能耐受的沖擊次數越少；此外，直流u _ （ 1ma ）值隨沖擊次數的增加具有快一慢一快的下降過程。
  6. Based on investigating and technical testing, this paper researches the electric upsetting process comprehensively, puts forward a over - all parameters control system, a intelligent upsetting project, a " spherically upsetting method " and a detecting pressure ? ontrolling temperature method innovatively. it is the first time to use the intelligent control theory in electric upsetting, put forward a defect removing experts system and temperature control fuzzy experts system, as following : 1. method of reconstructing intelligent upsetting machine from a traditional one, changing the parameters to controllable

    本文在理論分析、調研和工藝實驗的基礎上深入研究電熱鐓粗工藝，提出了電熱鐓粗工藝全參數控制系統、智能型電鐓機的硬體框架，提出了具有創新性的「球形鐓粗法」及檢測變形阻力? ?控制變形溫度的方法，並首次把智能控制技術運用於電熱鐓粗工藝，提出了電熱鐓粗產品缺陷消除專家系統和溫度控制模糊專家系統。
  7. Main research contents and achievements of this thesis is as follows : l. this paper carries through particular test and analysis to the basic physical - chemical properties of gaojiawang palygorskite, an environmental mineral fibre, by xay, ir, tem, sem etc. this paper has also discoursed upon the development appliance research status in quo and directions of palygorskite. 2. according to the preceding surface modification research achievements to nonmetal mineral materials, the author combines the self characteristics of palygorskite such as the ratio of length and diameter, typical nano - rank particle diameter, big ratio surface area, well - developed crystal growth imperfection and lattice defect etc. the author also designs organising modification ortho - experimentation of palygorskite by adopting iso - propyl alcohol as thinner of wd - 51 and ndz - 401, and acquires the best craft parameters and craft conditions for gaojiawang palygorskite original ore organising modification, namely : wd - 51 concentration 1. 6 % ( wt % ), modification temperature 120 ?, and modification time 60 mins ; ndz - 401 concentration 2. 0 % ( wt % ), c modification temperature 120, modification time 80 mins

    在前人對非金屬礦物材料表面改性的基礎上，結合環境礦物纖維?坡縷石自身的特點（如：長徑比、典型的納米粒徑、大比表面積、發育的晶體生長缺陷和晶格缺陷等） ，通過對坡縷石有機化改性設計正交試驗，採用（ ch _ 3 ） _ 2choh作為稀釋劑，獲得了採用wd - 51和ndz - 401對高家窪坡縷石原礦進行有機化改性的最佳工藝參數和工藝條件，分別為： wd - 51的濃度為1 . 6 （ wt ） ，改性溫度為120 ，改性時間為60min ； ndz - 401的濃度為2 . 0 （ wt ） ，改性溫度為120 ，改性時間為80min 。
  8. The result showed that the size and character of the defect was obtained through infrared temperature testing and simulated temperature distribution, and the accidents were avoided

    研究結果表明，通過紅外溫度檢測及模擬溫度場，可以有效地檢測內部缺陷的性質及大小，從而預防和避免事故發生。
  9. Compared to gan, which is one of the most successful wide - band semiconductor materials at present, zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature than gan ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy ( ~ 60mev for zno, 25mev for gan ), which promises strong photoluminescence from bound excitonic emissions at room temperature ; meanwhile, homogeneous bulk zno is available

    和gan相比， zno薄膜具有生長溫度低，激子復合能高（ zno ： 60mev ， gan ： 21 25mev ） ，受激輻射閾值較低，能量轉換效率很高等優點。有可能實現室溫下較強的紫外受激發射，制備出性能較好的探測器、發光二極體和激光二極體等光電子器件。
  10. As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence

    這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加，同時pl強度在l戶800有一個大的增強。這個結果提示我們，界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。
  11. Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo, tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo. as we know, band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices

    利用mg _ xzn _ （ 1 - x ） o薄膜，可以在保持zno六方纖鋅礦（ wurtzite ）結構的同時有效調節調節薄膜的禁帶寬度，制備出基於氧化鋅的量子阱、超晶格及相關的光電器件，如基於氧化鋅的紫外光探測器、紫外發光二極體和紫外激光二極體等光電子器件。
  12. Mainly directing against leaking of pz900 high temperature flat valve body with hydraulic pressure, utilizing foundry technology theory and metal solidification principle, combineing computer aided design, analyzed casting process and found out the defect causation, the leaking defect resolved

    摘要主要針對pz900高溫平板閘閥閥體試壓滲漏的問題，利用鑄造工藝理論和金屬凝固原理，結合計算機輔助設計，對閥體的鑄造工藝進行了分析，找到了產生缺陷的根本原因，解決了該件的滲漏問題。
  13. Freezer with temperature 4 c degree, but not the frozen compartment. we are not liable for defect items resulted from improper storage or handling

    我們不會對因疏忽而未有妥善存置的貨品作出退貨退款的安排。
  14. In this part, the issues and mechanism of light degradation of b - doped p - type cz - si solar cells are introduced firstly, it was clarified that boron and interstitial oxygen are major components of defect center for light degradation of b - doped cz - si solar cells. then in the experiment the b - doped cz - si is chosen as the substrates and annealled at different temperature

    文中首先介紹了摻硼單晶硅太陽電池的光照衰減問題及衰減機制，然後以p型摻硼單晶硅為實驗樣品，經過不同溫度的熱處理，對影響光衰減的主要因素硼、氧進行了研究。
  15. The effect of many factors on the growth of thin films is especially analyzed and generalized, such as surface topography, structure defect of substrate, deposition temperature, and so on

    特別對基底的表面形貌、結構缺陷、沉積溫度等因素對薄膜生長影響的蒙特卡羅方法模擬的研究進展進行了分析和歸納。
  16. Those samples treated show a major peak at 2. 02ev and a minor one at 2. 13ev at a given low temperature and experiences a blue - peak - shift at room temperature. a defect model is abstract suggested to account for the pl of sintered psc

    經氧化研磨或研磨的樣品在低溫下有較高的發光強度，發光主峰位於2 . 02ev ，在2 . 13ev有一弱峰，室溫下發光峰發生藍移。
  17. In addition, the inner surface temperature with the effect of air convection in the detect is different from the one in terms of considering air heat transfer in the defect as conduction and the effect caused by radiation can be neglected

    考慮缺陷內空氣對流換熱的影響下得出的溫度與純導熱條件下得出的溫度存在較大誤差，輻射的影響可以忽略不計。
  18. Reference to the designation of die casting mould, we put forward some kinds of projects respect to the design and manufacture of dies of the special purpose machine. and we simulate die casting filling process 、 surface defect distribution and temperature field etc. of az91d magnesium alloy shell part with flow3d software

    設計時將參照壓鑄模的設計方法，提出多種方案，並使用flow3d模擬設計軟體來模擬金屬液的填充過程，預測可能產生缺陷的位置，從而決定澆注系統的形狀和分佈，冷卻水道的流向和位置，分流錐的大小和位置。
  19. Ecr - pemocvd has an incomparable property that the growth of high quality gan thin film can be controlled in a low range of temperature from 400 c to 600 c. accordingly, the structure defect and thermal mismatch will be reduced

    Ecr - pemocvd法能夠在400 - 600的低溫下大面積生長gan薄膜，因此減少了晶格缺陷的產生。
  20. We also investigated the effect of c on the samples formed by ion implantation of mn and c. we studied the samples " crystal structure and surface appearance by x - ray diffraction and afm, experimental results revealed that with increasing the annealing temperature, the crystal lattice reformed and defect in the surface reduced gradually

    還進行了mn ~ + 、 c雙離子注入，研究了c對樣品性質的影響。利用x -射線衍射法和原子力顯微鏡對樣品的晶體結構和表面形貌進行了研究。發現隨著退火溫度的升高，樣品的晶格質量得以恢復；注入表面形成的晶格缺陷逐漸減少。
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