temperature homogeneity 中文意思是什麼

temperature homogeneity 解釋
溫度均勻性
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • homogeneity : n. 1. 同種；同質；同性。2. 【數學】齊性，均勻；同一性，均衡性，均勻性。
  1. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  2. Yig and ce : yig precursors were prepared via coprecipitation. by means of improving homogeneity and decreasing synthesis temperature, harmful yfeo3 phase was restrained, the oxidation of ce3 + was under control, and pure phase yig and ce : yig ( x = 0. 2 ) were obtained

    採用共沉澱法合成yig及ce ： yig前驅體，通過提高組分均勻性、降低煅燒溫度等手段，有效地抑制了yfeo _ 3雜相的生成和ce ~ （ 3 + ）離子的氧化，合成了單相yig和ce ： yig 。
  3. Contrasting the results of simulation and the experiment for depositing the 3 inch thin films by icds technique, the center position of substrate and the target is in a 18mm offset, the thickness distribution homogeneity is under 8 %. based on the analyses of the theoretic heat distribution for the radiant heating system, a 3 inch size radiant heater fitting for the requirement is designed and made, whose temperature difference is under 6 %

    其次，對3英寸范圍內的膜厚分佈進行了理論模擬，在此基礎上和試驗結果對比分析，發現：在倒筒靶直流濺射裝置下，如果採用一種讓基片中心和靶中心處于相對偏心距離為18mm的位置來制備3英寸薄膜，其膜厚分佈的均勻度范圍控制在8以內。
  4. In this study, precursors have been prepared by coprecipitation. the precursors prepared by coprecipitation have high purity, homogeneity and reactivity etc. thus it can decrease synthesis temperature and pbo volatility. furthermore the pyrochlore phase is hardly formed during synthesis

    通過化學共沉澱法制備前驅體，使各組份能以原子尺度進行混合，提高反應活性，有效降低合成溫度，最大限度地減少鉛揮發造成的污染，同時避免焦綠石相的生成。
  5. In order to obtain the tolerance requirement for the magnetic field homogeneity of the solenoids in electron cooling device, the source of the magnetic imperfection and its influence on the transverse temperature of electron beam were investigated by means of numerical simulation, and taking the space charge effect of electron beam into account

    摘要分析了直螺線管磁場缺陷的來源，考慮了電子束的空間電荷作用，採用數值方法模擬計算了磁場缺陷對電子束橫向溫度的影響，獲得了電子冷卻裝置中直螺線管磁場的均勻性要求。
  6. To prove the accuracy of the mach number, and the parameter homogeneity of the design nozzle " s exit, cfd calculate has carried on the design results. under the condition of supersonic and hypersonic flow, and a certain range of temperature, and mach number, the conclusion of the influence of specific heat to nozzle design is drawn

    為了驗證所設計的噴管出口馬赫數的大小和噴管出口流場的均勻性，採用nnd格式和b l湍流模型求解雷諾平均n - s方程，對設計結果進行了cfd驗算，得出了在一定溫度范圍內，超音速、高超聲速流動的條件下，不同馬赫數范圍內變比熱容對噴管型面和噴管出口馬赫數的影響。
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