thermal annealing 中文意思是什麼
thermal annealing
解釋
加溫退火-
In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper
本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。 -
Wang yongqian, liao xianbo, ma zhixun, et al. solid - phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing [ j ]. applied surface science, 1998 135 : 205
薛清，郁偉中，黃遠明.利用快速退火法從非晶硅薄膜中生長納米硅晶粒[ j ] .物理實驗， 200222 （ 8 ） : 17 -
According to the results of ramman and xrd spectrum, the structural and ramman characteristics of 5 1014cm - 2 dy ions implanted cdte films deposited on ceramic substrate have been studied, and the function of the thermal annealing have been discussed
採用顯微喇曼譜結合xrd ，研究了5 1014cm - 2dy離子注入陶瓷基底上沉積的cdte薄膜的結構和喇曼特性，並討論了離子注入后的退火效應。 -
In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient
本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。 -
The effects of preparation conditions and thermal annealing on the microstructure, magnetic properties and magnetoresistance of fex 1 - x granular films
多晶鈣鈦礦錳氧化物中的巨磁電阻與磁場關系 -
In this dissertation, nanometer zno thin films on si ( 100 ) substrates were prepared by using thermal evaporation technique following by two - step annealing process : high quality zno thin films and mgxzn1 - xo alloy films have been grown on si ( 100 ) substrates with mgo buffer layers by using thermal evaporation technique following by two - step annealing process
本文介紹了採用電子束蒸發方法在si補底上制備出了高純度的金屬鋅膜，然後通過二次退火得到了具有六角結構的高質量氧化鋅多晶薄膜材料，另外，還採用電子束蒸發mgo薄膜作為緩沖層二次退火金屬鋅膜的方法制備出了高質量氧化鋅多晶薄膜材料和mgzno合金薄膜材料。 -
The failure of thermal spray coating of hearth rolls in continuous annealing furnace and the powder material
連續退火爐輥熱噴塗塗層失效方式與塗層材料使用 -
The experimental results show that the produced radiation damage and its thermal annealing behavior are the same for both irradiations in a - al2o3, and that the heavy ion irradiation can well simulate the neutron and / or proton irradiation
實驗表明，兩種情況下輻照后的- al _ 2o _ 3材料中產生的輻照損傷及其退火效應一致，說明採用重離子輻照可以很好地模擬中子或質子輻照。 -
In order to verify the reliability and validity of the heavy ion irradiation simulation of neutron and proton irradiations, radiation damage and its thermal annealing behavior in a - al2o3 irradiated at the equivalent dose by 85 mev 19f ions and by en > 1 mev neutrons, respectively, are studied
為驗證重離子模擬輻照的可行性，首先進行了等效劑量下的中子輻照與重離子輻照后- al _ 2o _ 3樣品中輻照損傷及其退火效應研究。 -
Mathematical modeling and application of radial effective thermal conductivity for coil heat transfer in hph bell - type annealing furnace
罩式退火爐爐內鋼卷徑向非連續介質導熱的模擬研究 -
It was reported that the secondary phase of mnas has been found in gaas substrate by mn - implanted and subsequent rapid thermal annealing
有報道稱採用離子注入的方法將mn ~ +注入到gaas單晶襯底中，經過快速熱退火處理后，發現在晶體中生成了mnas第二相。 -
Now if we suppose that the rated temperature limit of any chip were identical, confining the highest temperature in the rated limit is the most important, for this purpose i apply the principle of annealing algorithm to the optimization of place distribution design. under the unvaried condition of thermal dispersion, we can get the least temperature of the maximum value in some kind of chip array
為了使得電子元件最大溫度負荷在特定散熱狀態下達到最低（低於額定的最高溫度值） ，我們將模擬退火演算法的優化設計思想應用到電子元件陣列的布局優化中，使得在不改變外部散熱條件的情況下，僅僅通過電子元件位置分佈的改變就取得降低其最高工作溫度的效果。 -
In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased
Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。 -
In this paper, we used different doping means to prepare the mn - doped gaas material. firstly, we incorporated mn of different dose into gaas by ion implantation, including the couple - ion implantation with mn + and c, then performed rapid thermal annealing in different temperature. furthermore, we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion
本論文利用不同摻雜方法進行了摻mngaas這種dms材料樣品的制備，首先利用離子注入法對砷化鎵（ gaas ）材料進行不同劑量的錳（ mn ~ + ）離子注入，其中包括加碳（ c ）的雙離子注入，然後在不同溫度下進行快速退火處理；此外還利用擴散法對gaas晶片進行不同mn擴散源（純mn 、及mnas ）的摻雜。 -
The voidage of the electrode was improved and the three phases boundary was ameliorated by the thermal annealing process of air electrode, and the performance of catalyst was improved as a result
並通過電極熱處理工藝，明顯提高電極孔隙率、改善三相界面，提高了催化性能。採用穩態極化曲線測試方法研究sr的摻雜對la _ （ 1 - x ） sr _ xmno _ 3催化性能的影響。 -
In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties
本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。 -
Ni ohmic contacts fabricated by traditional evaporation and thermal annealing on temperature of about 1000 have lower contacts resistances. the testing result on 400 does n ' t show it can keep thermal stability
按常規方法鍍鎳（ ni ）並經1000左右高溫退火得到的歐姆接觸具有更低的室溫比接觸電阻，但400高溫歐姆特性測試表明其熱穩定性不夠好。 -
Synthesis of carbon nanotubes using alumina template and its thermal annealing effects
碳納米管的氧化鋁模板法合成及其退火效應研究 -
Tb doped pt thin films with highly ( 100 ) orientation were prepared. rapid thermal annealing process was used to supply enough energy for the movement of the atoms. so perovskite phase began to form at ( 100 ) orientation which had the lowest surface energy
研究發現， pt / tb薄膜系統為非均相成核，利用快速熱處理工藝可控制原子以高能量遷移，使鈣鈦礦結構晶體以表面能最低的（ 100 ）晶面在薄膜生長方向上結晶生長， pt / tb薄膜出現了（ 100 ）晶浙江大學碩士學位論文面的擇優取向。 -
The main work is as the follows : 1. perovskite batio3 thin films are grown on sio2 / si ( 111 ) substrates by sol - gel process and rapid thermal annealing ( rta ) technique
主要工作如下: 1 .用溶膠-凝膠法和快速退火工藝在sio2 / si （ 111 ）基片上生長了鈣鈦礦結構batio3薄膜。
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