thickness of oxide 中文意思是什麼
thickness of oxide
解釋
之縮寫-
Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。 -
Abstract : taken as materials, ammonium paramolybdate, molybdenum tri - oxide, molyb denum dioxide and molybdenum powder of different layers in thickness are reduced at different temperatures, and by analyzing the grain size, oxygen content and mo rphology of the molybdenum powders obtained, the effects of reduction processing on the grain size and oxygen content of the molybdenum powder of different layer s in the same boat are discussed
文摘:以仲鉬酸銨、三氧化鉬、二氧化鉬和鉬粉為原料，採用不同的溫度和不同的料層厚度進行了還原試驗，分析了所得鉬粉的粒度、氧含量和形貌，剖析了同舟內不同層次鉬粉的粒度和氧含量的變化規律。 -
Influences of the parameters on device performance such as thickness of strained si, ge content, channel doping and thickness of buried oxide are discussed based on given models. the models could be very helpful for device design
根據所建立的模型，針對硅膜厚度、 ge組分、摻雜濃度和埋氧層厚度等參量對薄膜全耗盡型strained - soimosfet器件性能的影響進行詳細討論，為器件結構設計提供了理論基礎。 -
Taken as materials, ammonium paramolybdate, molybdenum tri - oxide, molyb denum dioxide and molybdenum powder of different layers in thickness are reduced at different temperatures, and by analyzing the grain size, oxygen content and mo rphology of the molybdenum powders obtained, the effects of reduction processing on the grain size and oxygen content of the molybdenum powder of different layer s in the same boat are discussed
以仲鉬酸銨、三氧化鉬、二氧化鉬和鉬粉為原料，採用不同的溫度和不同的料層厚度進行了還原試驗，分析了所得鉬粉的粒度、氧含量和形貌，剖析了同舟內不同層次鉬粉的粒度和氧含量的變化規律。 -
Metallic and oxide coatings - measurement of coating thickness - microscopical method
金屬和氧化物鍍層.鍍層厚度的測量.顯微鏡法 -
Test methods for thickness of anodic oxide coatings on aluminium and aluminium alloys - part 1 : microscopical method
鋁和鋁合金陽極氧化塗層厚度的試驗方法.第1部分:顯微鏡法 -
The reason of not uniform of oxide thickness in an inner burning h2 and o2 combination oxidation furnace is analyzed
摘要分析了在採用內燃結構進行氫氧合成氧化過程中，造成氧化層厚度不均勻的原因。 -
The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field
具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。 -
Consequently the titanium oxide film with a high thickness can be considered an important improvement to solve the problem of metal ions release in the tissues surrounding the implant
氧化鈦膜的厚度隨電化學工藝參數的不同而變化，膜本身有著良好的阻止離子釋放作用。 -
Test methods for thickness of metal and oxide coating by microscopical examination of cross - section
金屬和氧化覆蓋層厚度測試方法截面金相法 -
Standard test method for measurement of metal and oxide coating thickness by microscopical examination of a cross section
用橫斷面顯微觀察法測定金屬及氧化層厚度的標準試驗方法 -
Thickness testing method of the metal deposits and aluminum oxide films for the light industrial products. weighing method
輕工產品金屬鍍層和鋁氧化膜的厚度測試方法.測重法 -
The calculational result by exact solution shows that the substrate inject current is larger than gate inject current in the same condition. the influence of the thickness of sio2 and la2o3 on the tunneling current is given to compare much different thickness of sio2 and la2o3 tunneling current on the same equivalent oxide thickness ( eot ) condition
在等效氧化層厚度相同的情況下，比較了幾種不同的sio _ 2層厚度和la _ 2o _ 3層厚度結構的隧穿電流的大小，給出了sio _ 2層厚度和la _ 2o _ 3層厚度對隧穿電流的影響。 -
Effects of process parameters on thickness and hardness of micro - arc oxidation aluminum oxide ceramic coating
鋁合金微弧氧化陶瓷膜性能及其影響因素探討 -
Test methods for thickness of anodic oxide coatings on aluminium and aluminium alloys - part 3 : non - destructive measurement by split - beam microscope
鋁和鋁合金的陽極氧化膜厚度試驗方法.第3部分:用分光束顯微鏡的無損測量 -
With the demands of large integration of capacitors, silicon oxide ( sio2 ) has approached its thickness limitation
隨著電容器件集成度越來越高，以sio2為主的介質膜接近極限厚度，難以滿足要求。 -
Since metal - oxide - semiconductor ( mos ) device appeared, integration of integrated circuit ( ic ) expands as moore law. meanwhile the dimension of device scales down, the thickness of sio2 gate dielectric shrinks as the same law. but as the thickness of sio2 gate dielectric reaches at isa, the gate current rises very quickly and reaches at 1 10a / cm2
自從金屬-氧化物-半導體（ mos ）器件出現以來，集成電路的集成度按照摩爾定律增加，相應地，器件的物理尺寸按照等比縮小的原則不斷縮小， sio _ 2作為柵介質的厚度不斷縮小，特徵尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質的厚度小於1 . 7nm 。 -
The paper analylizes and caculates the operation temperature of the tube through the methods of the inner oxide scale thickness and rigidity. on this basis the paper calculates the remain life of the experimental tubes
利用「內壁氧化層厚度法」和「顯微硬度法」對實驗管件的實際使用溫度進行了分析和計算。
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