thin dielectric film 中文意思是什麼

thin dielectric film 解釋
電介質薄膜
  • thin : adj （thinner; thinnest）1 薄的 （opp thick）; 瘦的 （opp fat stout）; 細小的；【印刷】細體的。2 ...
  • dielectric : adj. 非傳導性的，絕緣的，介電的。n. 電介質，電介體，絕緣體。
  • film : n 1 薄層，薄膜；薄霧，輕煙；細絲狀的東西。2 【攝影】感光乳劑，照相軟片，電影膠片；影片。3 〈 pl ...
  1. Within the framework of the tim ( transverse field model ), using the eft ( effective field theory ) and the mft ( mean field theory ), considering the long - range effects and the interfacial effect, we studied the transition properties of the ferroelectric thin film, pyroelectric coefficient and dielectric susceptibility and triple hysteresis loop of the ferroelectric bilayer structure theoretically

    我們應用平均場、有效場等方法，在橫場伊辛模型框架內，考慮贗自旋間長程相互作用和界面效應，對鐵電薄膜、雙層薄膜的相變、熱釋電、介電，以及電滯回線等性質進行了較深入的研究。
  2. In order to demonstrate the dielectric properties of sto thin film, the sandwich - type capacitors and interdigitated capacitors were fabricated

    為了測量sto薄膜的介電性能，做成平板電容器和叉指電容器兩種結構的電容器。
  3. Dielectric thin film was an important kind of electronic thin films, which has wide applications in microelectronic and photo - electronic technology

    介電膜，是一種重要的電子薄膜。在微電子技術和光電子技術中有著廣泛的應用。
  4. The dielectric properties of bst thin film were measured at room temperature and liquid nitrogen temperature with the parallel - plate capacitor structure. the dielectric constant and loss tangent were 1200 and 0. 0045 respectively at 1mhz, and 77k

    77k時，薄膜的相對介電常數『和最大介電損糧御心沁分別為1200和0 .惻5 ;外加直流偏廠巨30v ， bst薄膜的介電可調性能為60 % ;性能因數k值達到133 。
  5. Srtio _ 3 ( sto ) thin films exhibit a large electric field dependence of dielectric permittivity. the microwave surface resistance of yba2cu3o7 - x ( ybco ) is much lower than that of the normal conductor. the typical value of rs for ybco epitaxial thin film is smaller than 1 m

    在低溫下， srtio _ 3 （簡寫為sto ）薄膜具有強烈的非線性介電性質，即:介電常數隨外加直流電場變化而變化; yba2cu3o7 - x （簡寫為ybco ）具有極低的微波表面電阻， rs （ 10ghz ， 77k ） < 1m ，而且它們的晶體結構相似，晶格常數匹配以及化學性質相容。
  6. The dielectric constant of srtio3 ( sto ) thin films is voltage - dependent near the curie temperature tc ( about 40k ). and no dispersion in is observed in sto at frequencies up to 10 ghz. yba2cu3o7 - x ( ybco ) high temperature superconducting thin film has very low microwave surface resistance

    Srtio3 （ sto ）薄膜在其居里溫度附近（ ~ 40k ）具有介電常數隨電場強度變化而變化的性質，同時sto在10ghz以下介電常數沒有頻率色散性。
  7. The la - modified thin films with 220nm thickness exhibited diffuse phase transition through the testing of temperature dependence of dielectric permittivity. the abnormal dielectric phenomenon was explained according to the observed relaxor behavior. the influence of post - annealing on the properties of the ferroelectric thin - film capacitors is another component of this thesis

    在薄膜的介電性質方面，通過對介電溫譜的測試，發現對于厚度薄至220nm的薄膜，摻鑭后同樣會導致馳豫型的鐵電相變，並依此解釋了介電常數的「反常」現象。
  8. Sectional specification : fixed capacitors for direct current with electrodes of thin metal foils and a polycarbonate film dielectric ; german version en 131700 : 1997

    分規范.帶金屬箔和聚碳酸脂膜介質電極的直流電用固定
  9. Blank detail specification - fixed capacitors for direct current with electrodes of thin metal foils and a polycarbonate film dielectric - assessment level e ; german version en 131701 : 1997

    空白詳細規范.帶金屬箔電極和聚碳酸脂薄膜介質的固定
  10. Blank detail specification - fixed capacitors for direct current with electrodes of thin metal foils and a polycarbonate film dielectric - assessment level ez ; german version en 131702 : 1997

    空白詳細規范.帶金屬箔電極和聚碳酸脂薄膜介質的固定
  11. In this thesis, the millimeter - wave thin film dielectric phase shifter was investigated, which has significantly potential application in t / r module of phased array radar

    =本文對毫米波有源相控陣雷達t / r組件中有重要應用前景的薄膜介質移相器展開研究。
  12. As a class of material with special appearance, thin film has particular optical, mechanical, electroniccal and magnetical properties, and was used as the basic material in many new application fields, such as microelectronics, optoelectronics, magnetoelectrics, overhardening of cutting tools, sensors and the application of solar energy, etc. as a prospective dielectric material, tio _ ( 2 ) thin film was used in thin film technique, which brings a great interest to the researchers of all over the world

    作為特殊形態材料的薄膜，具有特殊的光、機、電、磁等性能，已經成為微電子學、光電子學、磁電子學、刀具超硬化、傳感器和太陽能利用等新型應用領域的材料基礎。 tio _ 2作為一種極具前景的介質材料被應用到薄膜技術中來，引起了國內外研究者的極大興趣。
  13. Antireflection coating. a thin, dielectric or metallic film applied to an optical fiber surface to reduce its reflection and thereby increase its transmitting ability

    抗反光塗層。一種薄的絕緣體或金屬薄膜（或者是類似薄膜） ，貼在光纖表面以減少反射，並以此而提高光纖的發射能力。
  14. After the analysis of some structures commonly used in dielectric phase shifter, a new structure named distributed capacitor - loaded phase shifter was carried out. it is comprised of a high - impedance transmission line periodically loaded with bst ( baxsr1 - xtio3 ) thin film capacitors

    在對現有的幾種薄膜介質移相器結構進行分析的基礎上，提出了一種新型的分散式電容負載型薄膜介質移相器結構，它由高阻傳輸線和周期性負載的鈦酸鍶鋇薄膜電容構成。
  15. Thin - film area : the area to deposit " dielectric layer " and " metal layer " as the conducted or insulated films, also has cmp ( chemical - mechanical _ polish ) to planarize the chips on the wafer ' s surface and add high ( low ) temprature rtp ( rapid - thermal - process ) to the wafer

    薄膜區：專門沉積「介電層」 ， 「金屬層」等導電或不導電薄膜的區域，併兼做晶圓表面器件之平坦化及高（低）溫快速熱退火製程。
  16. The effect of oxygen pressure on the dielectric properties of pulsed laser deposited la - doped pbtio3 thin film

    摻雜鈦酸鉛薄膜介電性能的影響
  17. The natures of the probe and formation mechanisms in these techniques are different ; therefore, the images of spm can reflect different properties of sample surface. in this work, related properties of ferroelectric thin film were investigated as followed : the main factors determining the image formation of piezoresponse force microscopy ( pfm ) and scanning nonlinear dielectric microscopy ( sndm ) were studied. to avoid the misreading of the same conductive tip with different state, a new method of polarization distribution mapping with nonconductive tip was proposed, and the result of experiment demonstrated that the polarization distribution of ferroelectric thin films could be characterized well by the new approach

    本工作主要分為以下幾個部分:從研究鐵電薄膜的壓電響應力顯微鏡（ pfm ）和掃描非線性介電顯微鏡（ sndm ）成像的影響因素入手，討論了針尖對成像質量的影響;為降低實驗成本、減小導電探針針尖狀態變化對鐵電薄膜微區電性能測試的負面影響，提出了以非導電探針檢測微區極性分佈的方法，並在現有spa - 300hv型spm的實驗平臺上以pfm模式成功實現了新方法對鐵電薄膜極性分佈的表徵。
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