threshold current 中文意思是什麼
threshold current
解釋
限界電流；低限電流-
As a mix - mode chip, the application - specific controller including analog signal and digital signal processing block can be applied to receiving, amplifying, processing, controlling signals of pir, and offer a wide application in some fields. in analog circuits, by sub - threshold mosfet, a self - bias current source is presented, which has a high power supply restrain ratio and a complementary to absolute temperature characters
這款晶元是一款數模混合晶元，包括模擬信號處理（含模數介面模塊）和數字信號處理兩大模塊，完整實現對紅外信號的接收、放大、處理、控制，產生有效數字電平驅動繼電器、可控硅等負載，應用於自動燈等多種場合。 -
The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser
大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。 -
In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function
本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。 -
The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers
Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。 -
The second one : we studied the effect of temperature on performance of lds. it was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively. coefficient of temperature shift is 0. 24 / k, wheras characteristic temperature also decrease with rise of temperature
研究了溫度對激光器各參數的影響，隨著溫度的增加，閾值電流呈指數增加，輸出功率和斜率效率分別呈拋物線和指數關系遞減，同時特徵溫度也減少，波長隨溫度的漂移系數為0 . 24nm ，並且總結了一些溫度和結構設計方面的關系。 -
Each virtual - loop ' s output signals mainly derive from the pixel difference between consecutive image frames within the virtual - loop area. when the result of consecutive frame difference is smaller than the threshold, current frame subtracts the background to produce the virtual - loop ' s signals
各個虛擬線圈的輸出信號主要來源於幀間差分，當幀間差分的結果小於判斷閾值時，系統會自動調用減背景圖像處理方法來產生虛擬線圈信號。 -
Vertical - cavity surface - emitting lasers ( vcsel ' s ) have distinct advantages over conventional edge emitting lasers, such as small divergence angle, single longitudinal mode operation and very low threshold current. they are especially suitable for making two - dimensional ( 2 - d ) arrays as well as vcsel ' s based integrate devices
垂直腔面發射半導體激光器（ vcsel ）與傳統的邊發射半導體激光器相比，它具有發散角小、單縱模工作、非常低的閾值電流等優點，尤其它適於二維面陣集成和與其它光電子器件集成。 -
The lowest threshold current 1. 8ma is achieved with continuous - wave at room temperature, the maximum output power is 7. 96mw. for the resesrch work on the fabrication procedures, we discusses selective oxidation and selective wet etching
利用濕法氧化和選擇性腐蝕相結合工藝研製出室溫連續工作的vcsel ，最低閾值電流為1 . 8ma ，輸出功率為7 . 96mw 。 -
Green - mode which provides off - time modulation to linearly decrease the working frequency under light - load conditions and power limiting which will turn off the transistor when peak current of inductor reaches the threshold current
同時該電路集成了能在輕負載情況下自動降低頻率的綠色模式以及能在電感峰值電流過高時關斷調整管的功率限制模塊，降低了系統的功耗。 -
The principle advantages of vcsels over conventional edge - emitting lasers lie in ultralow threshold current, small far - field divergent angle, high modulation frequency, potential for wafer level testing and the ease for single longitudinal mode operation and two - dimension integration. as a result they show considerable promise for applications such as optical fiber communication, parallel optical interconnects, optical information processing and neural networks, etc. a direct coupling theoretical model in quasi - three - dimension for the gain - wave guide vertical - cavity surface - emitting lasers has been created in this paper
它與傳統的邊發射激光器相比具有更優越的特性，例如，具有極低的閾值、較小的遠場發散角、調制頻率高、易實現單縱模工作和二維集成，無須解理封裝即可進行在片測試等，所以，它被廣泛應用於光纖通訊、并行光互聯、光信息處理、光神經網路等領域。 -
Based on these analyses, we see that the si - based quantum - dot laser has higher gain and differential gain, its threshold current is more lower and the threshold current is insensitive to temperature when si - based quantum - dot laser compares with normal semiconductor laser and quantum - well laser
分析表明，與普通激光器和量子阱激光器相比， si基量子點激光器有更高的增益和微分增益，閾值電流更低，閾值電流對溫度更不敏感。 -
The results show that if n - dbr is neglected, the theoretical calculations are in good agreement with the references. but our results also indicate that n - dbr has very important influences on the properties of vcsels and if it is not considered, there must be some errors. and double oxide - confining regions offer a method of decreasing threshold current and controlling high order modes
結果表明，當不考慮n - dbr的影響時，我們的理論計算結果與文獻報道相符；但通過計算可知n - dbr對vcsel特性有較大影響，如果不考慮會帶來誤差；同時雙氧化限制層為vcsel器件提供了一種降低閾值，抑制高階橫模的方法。 -
There are many approaches to achieve the purpose, and one of the perfect them is tunnel - cascaded multi - active regions large cavity ld structure, in which not only the effective thickness of the active region increase but also obtain lds ’ low threshold current and high slope efficiency and other properties
有多種途徑實現ld光束特性的改善，其中採用多有源區隧道結級聯大光腔結構的半導體激光器是既增加有源區等效厚度而又保證ld低閾值電流和高斜率效率等特性的最佳途徑之一。 -
However, ingaas strained - layer single quantum well lasers, optimized for low threshold current and low series resistance, have a highly elliptical beam structure emanating from the laser facet
但是報道的技術中多是針對圓對稱光束或近圓對稱光束。 -
The maximum one side output power of uncoated lasers attain to 2w and the minimum threshold current is 120ma. thereafter, algalnp and algaas material system lateral real refractive index waveguided 650nm / 780nm double wavelength multiquantum well lasers for dvd - rom driver and dvd player ' s optical pickup system are simulated and designed on the basis of the experiment of conventional lasers and the former research of tunneling cascade devices
在此之後，結合650nm附近波長的常規algainp gaas多量子阱激光器的實驗結果與以往隧道級聯器件的研究，設計並模擬分析了基於algainp材料與algaas材料的可用於dvd - rom驅動器和dvd播放機光學讀取系統的側向實折射率導引隧道級聯650nm 780nm雙波長多量子阱激光器。 -
In this paper, after studying the technology of virtual instrument and the characteristics of ld, we developed the ld test system using the design idea of virtual instrument 。 the system is mainly used for test the threshold current, differential efficiency, v - i characteristic and p - i characteristic of ld module
本課題在對虛擬儀器技術和半導體激光器各項性能參數深入研究的基礎上，採用虛擬儀器的設計思想，研究開發了基於虛擬儀器技術的半導體激光器特性參數檢測系統。該系統主要面向組裝后的激光二極體組件，對其進行電流閾值（ ith ） 、光電特性（ p - i ） 、電抗特性（ v - i ）等主要特性的測試。 -
As a result, a theoretical model of fiber grating external cavity semiconductor lasers including the reflectivity distribution of fiber grating has been presented in this paper. based on the model, the laser characteristics such as the threshold current, mode suppression ratio etc. have been specified
利用該模型對光纖光柵外腔半導體激光器的閾值電流、模式抑制比等進行了研究，得到了一些新的結論，並對此結論作出了合理的解釋。 -
Procedures for determining threshold current of semiconductor lasers
半導體激光器閾值電流的測定程序 -
For our laboratory is changing toward industrialization, a lot of work on conventional ingaas / gaas / algaas quantum well laser has been done. how the parameters, such as threshold current density, slope efficiency, fwhm and spectrum width, are influenced and how much the influence is, are discussed by the numbers. the effective means how to improve a certain performance parameter are purposed too
由於本實驗室正處于由試驗研究向產業化邁進的階段，針對常規ingaas / gaas / algaas量子阱激光器做了很多工作，文中系統論述了常規量子阱激光器的各項性能參數?閾值電流密度、斜率效率、遠場發散角、光譜線寬等的影響因素及改進的有效辦法，並針對激光器p ? i線性度不好、遠場發散角出現多瓣的現象，通過理論分析找出原因所在並進行了改進，有效解決了以上問題。 -
Based on the above, we have made a research on the fabrication technology of two - dimensionally ( 2d ) arrayed surface - emiting lasers, and have obtained two - dimensionally arrayed laser primarily with lower threshold current density and higher power output, which will promote the achievement of higher reliability, lower threshold current arrayed surface - emiting lasers laser for high power output
在此基礎上進行了面發射半導體激光器二維（ 2d ）列陣的制備研究，初步獲得了具有較低閾值電流密度和較高功率的45偏轉鏡面發射陣列半導體激光器，為研製高可靠性、高功率、低閾值電流的面發射陣列半導體激光器奠定了一定的基礎。
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