threshold gate 中文意思是什麼

threshold gate 解釋
閾值門
  • threshold : n. 1. 門檻;入口,門口。2. 【心理學】閾限。3. 界限,限度。4. 【物理學】臨界值,閾。5. 入門,開始,開端。
  • gate : n 1 大門,扉,籬笆門,門扇。2 閘門;城門;洞門;隘口,峽道。3 【冶金】澆注道,澆口,切口;【無線...
  1. Additionally, target detection will take into account a target ' s radar cross section ( rcs ), its aspect angle, and its air speed ( targets below the threshold gate will not be detected )

    外加目標的確定怎加了計算目標的rcs值當空速低於這個門限的時候目標將無法被察覺
  2. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型,用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線;分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響;論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性,分別模擬了室溫下和300時sicpmos器件的輸出特性,分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  3. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析,對所得結果從器件內部物理機制上進行了討論,最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深(凹槽深度)的增大,槽柵器件的閾值電壓升高,亞閾斜率退化,漏極驅動能力減弱,器件短溝道效應的抑制更為有效,抗熱載流子性能的提高較大,且器件的漏極驅動能力的退化要比改變結深小.因此,改變槽深加大負結深更有利於器件性能的提高
  4. Results show that threshold voltage uniformity of mesfet fabricated in planar selectively implanted process is better than that of in recessed - gate process

    結果表明,採用平面工藝制備的gaasmesfet閾值電壓均勻性比採用挖槽工藝制備的gaasmesfet閾值電壓均勻性更好。
  5. In order to study the influence of different process on the threshold voltage uniformity, gaas mesfets are fabricated both in recessed - gate process and planar selectively implanted process

    分別對採用隔離注入挖槽工藝和平面選擇離子注入自隔離工藝制備的gaasmesfet閾值電壓均勻性進行了比較研究。
  6. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上,對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究,著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移( vth和vit 、 vot )與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  7. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝,開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  8. And facing the heavenly threshold. this is just the famous grotesque rock " golden cock crowing towards the heavenly gate " one can also see the stone engraving of " hearing a cock crowing in the sky " on the rock

    站在寺前向上可以看到天都峰上一塊面向天門,形如公雞的巖,正在鳴叫飛翔。這就是著名的奇石「金雞叫天門」 。還可看到刻在上面的大字「空中聞雞鳴」 。
  9. Then he went to the gate facing east. he climbed its steps and measured the threshold of the gate ; it was one rod deep

    6他到了朝東的門,就上門的臺階,量門的這檻,寬一竿。又量門的那檻,寬一竿。
  10. The synthesis of arbitrary boolean functions based on threshold logic gate

    基於閾值邏輯門的任意布爾函數綜合
  11. The model of threshold voltage solves the problems of nonuniformly doped channel, short channel effect, implantation for adjusting threshold voltage, edge capacitance of gate, etc. not only the model can be used in ldmos, but it can perfectly describe the short channel effect of threshold voltage for all other mos devices

    其中,閾值電壓模型解決了溝道非均勻摻雜、短溝道效應,調閾值注入,柵邊緣電容等問題。該模型不僅適用於ldmos ,也可以很好地描述所有的mos器件閾值電壓的短溝道效應,嚴格證明了短溝道效應會引起閾值電壓的減小。
  12. The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions

    主要研究結果如下:首先,利用襯底熱空穴( shh )注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量,定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響,討論了不同應力條件下的閾值電壓變化。
  13. The analytical solutions to 1d schr ? dinger equation ( in depth direction ) in double - gate ( dg ) mosfets are derived to calculate electron density and threshold voltage

    摘要推導了雙柵mosfet器件在深度方向上薛定諤方程的解析解以求得電子密度和閾電壓。
  14. An analytical model for threshold voltage of grooved - gate mosfet ' s

    的閾值電壓解析模型
  15. During the course of modeling ldmos, the paper puts forward the method in which maxwell function in the static system is applied in analysis compute of ldmos threshold voltage. schwarz - chritoffel transformation method is used to solve the gate self - capacitance with limited size. at the same time, it also provides the method which computes the drain and source self - capacitance by conformal transformation and the equivalent - voltage sharing - charge model

    在對ldmos的建模過程中,本文提出了將靜電系統中麥克斯韋方程用於ldmos閾值電壓的分析計算的方法,引入了許瓦茲-克利斯多菲變換來求解了有限尺寸的柵自電容,並提出了用保角變換和等電壓電荷共享模型來計算漏與源的自電容的方法。
  16. After a great amount of detailed computer simulations and concise qualitative and quantitative theoretical analysis, the turbo codes " parameters and fpga specific hardware implementation architecture suitable for being integrated into dtv systems are determined. furthermore, the codec is completely designed with verilog hdl, ending with an occupation of less than a 600 - thousand - gate fpga chip. at this lowest hardware cost, a white noise snr threshold of 1. 8db at a net stream rate of 6mbps is achieved, which exceeds all other existent dtv systems " performance

    經過大量詳細的計算機軟體模擬和簡明扼要的定性與定量的理論分析,最終確定了數字電視系統中適合採用的turbo碼參數及針對fpga特殊構架的硬體實現結構,並用verilog硬體描述語言完成了turbo碼編譯碼器的完整設計,以佔用不到一片60萬門fpga晶元的較少的硬體資源取得了在6mbps凈碼率下1 . 8db的白噪聲信噪比門限這一遠遠超過現有任何數字電視系統的性能。
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