threshold of temperature 中文意思是什麼

threshold of temperature 解釋
感溫閾, 感溫極限
  • threshold : n. 1. 門檻；入口，門口。2. 【心理學】閾限。3. 界限，限度。4. 【物理學】臨界值，閾。5. 入門，開始，開端。
  • of : OF ＝Old French 古法語。
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  1. As a mix - mode chip, the application - specific controller including analog signal and digital signal processing block can be applied to receiving, amplifying, processing, controlling signals of pir, and offer a wide application in some fields. in analog circuits, by sub - threshold mosfet, a self - bias current source is presented, which has a high power supply restrain ratio and a complementary to absolute temperature characters

    這款晶元是一款數模混合晶元，包括模擬信號處理（含模數介面模塊）和數字信號處理兩大模塊，完整實現對紅外信號的接收、放大、處理、控制，產生有效數字電平驅動繼電器、可控硅等負載，應用於自動燈等多種場合。
  2. In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function

    本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
  3. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  4. Increasing ultrasound intensity in the range of cavitation threshold and cavitation peak value, decreasing monomer concentration and increasing the temperature make the induction period shorter. under optimized reaction conditions, the conversion of ba can reach 90 % in 11 min at high n2 flow rate the viscosity average molecular weight of the obtained pba reaches 5. 24 106. the molecular weight of pba varies with ultrasonic irradiation time, indicating that the ultrasonic induced emulsion polymerization is dynamic and quite complicated, polymerization of monomer as well as degradation of polymer occurs concomitantly

    一、實現了無常規化學引發劑存在下的超聲輻照引發丙烯酸正丁酯（ ba ）間歇乳液聚合，制備了pba納米粒子，在11min內轉化率達到90 ，分子量達5 . 24 10 ~ 6 ，隨反應時間的延長而降低，表明超聲輻照引發乳液聚合是一個動態的復雜過程，單體的聚合和聚合物的降解同時發生。
  5. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  6. The second one : we studied the effect of temperature on performance of lds. it was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively. coefficient of temperature shift is 0. 24 / k, wheras characteristic temperature also decrease with rise of temperature

    研究了溫度對激光器各參數的影響，隨著溫度的增加，閾值電流呈指數增加，輸出功率和斜率效率分別呈拋物線和指數關系遞減，同時特徵溫度也減少，波長隨溫度的漂移系數為0 . 24nm ，並且總結了一些溫度和結構設計方面的關系。
  7. After which, the battery will be charged by large constant current to allow the fast charging. finally, the constant voltage charging is adopted to guarantee the battery was charged to its full capacity. under the condition that the temperature has raised to a certain threshold at the constant current charging stage, the over temperature circuit is performing and it provides a compensation current which switches the system to constant temperature charging mode with the intention of protecting the ic

    即在充電初期採用較小的電流對電池進行預處理，對出現過放電的電池進行修復和保護;然後採用較大的恆定電流對電池充電，實現快速充電的目的;最後採用恆定壓充電，確保電池充滿;在恆流充電階段，當晶元溫度上升到一定程度時，晶元過熱保護電路開始工作，該電路以提供充電補償電流的形式使充電進入恆溫充電模式，對晶元進行保護。
  8. Hot stretching ratio ( hsr ) was maintained at 3. 96, cb content was changed. the results indicate that when the cb content increases, the room temperature resistivity of composites decreases. at the cb content of 12phr, the room temperature resistivity of blends sharply reduces, and composites change from insulator to conductor, the value is entitled the percolation threshold ; at the cb content of 20phr, the room temperature resistivity of composites achieves 10 ~ ( 2 ) cm

    結果表明:隨炭黑含量增加，復合材料的體積電阻率降低，當炭黑含量達到12phr （ phr指每一百份樹脂中所含填充物的重量份數）左右時，復合材料的體積電阻率急劇下降，此時一復合材料由絕緣體向導體轉變，這個值被稱為逾滲閥值;當炭黑含量到20phr時，復合材料的體積電阻率達到1 。
  9. When the energy distribution of secondary neutron are represented by evaporation spectrum ( lf = 9 ), care must be taken in describing the nuclear temperature near the threshold

    通過分析發現，評價次級中子能譜數據所採用的蒸發譜模型大都忽略了能級密度參數與激發能之間的關聯。
  10. Theoretically, the deformation of the fiber macro - bends forced by the shape memory alloy wire has been analyzed as the temperature over the acting threshold value of the sma. experimentally, a series results are obtained under the condition of the temperature changed from 60 to 89

    本文理論和實踐兩方面證明了分散式光纖溫度閾值傳感系統作為火災監測系統的可行性，並給出了不同溫度下的實驗結果，對實驗結果進行了分析和討論。
  11. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  12. In the uv light region, the absorption dramatically increases that is caused by the absorption of the films substance, hi addition, as the heat treatment temperature increases the absorption threshold slightly occurs " red shift "

    在紫外區，薄膜的吸光度急劇增大，而且，隨著熱處理溫度的增加，吸收閾值發生輕微的「紅移」 。這種降低是由於薄膜物質的吸收所致。
  13. Meanwhile, the paper analysis shortage of the methods commonly used heating insulating oil, investigate principles of traditional pid control and fuzzy control, integrats the advantage of two control algorithms, makes use of fuzzy + pid control algorithm to control insulating oil temperature, and has designed fuzzy + pid controller. through matlab simulation, validates that wavelet hard threshold vale de - noise method can effectively reduce the impact of random disturbance

    同時，論文分析了常用加熱絕緣油方法的不足，在研究傳統pid控制和模糊控制原理基礎上，綜合兩種控制演算法的優點，在絕緣油介損測量系統中，提出採用模糊+ pid控制演算法對絕緣油溫度進行控制，並實現了模糊+ pid控制器的設計。
  14. Secondly, other parameters such as temperature difference and emissivity of target and sky, molecular absorptive transmittance, instantaneous field of view ( ifov ), contrast threshold and radiant wavelength are discussed in detail

    然後，對目標天空背景溫差、發射率，氣溶膠衰減系數，瞬時視場、對比度探測閾值以及輻射波長等參數作了詳細討論。
  15. The initial development threshold temperature and effective accumulated temperature of whole generation were determined as 8. 40 and 456. 09, respectively

    全世代的發育起點溫度和有效積溫分別為8 . 40和456 . 09日度。
  16. Those substances presented the characteristics such as low threshold value, sensitive under low temperature, and low variance, which caused the complexity of luzhou - flavor liquor flavor and the great difference by tongue tasting

    苦味物質表現出閾值較低、在低溫下較敏感、可變性小、可使濃香型酒風味復雜、舌各部位對苦味的敏感程度差異較大等特徵。
  17. It indicated that the threshold temperature 7j, 1 of three kind of domains are identical. that is to say, when temperature reach 7j, 1, vbl in the walls of the three kinds hard domain begin to lose gradually

    此外，硬磁疇疇壁中vbl的分佈問題至今仍然沒有得到很好的解決，也就是說vbl究竟是充滿整個拉長的疇壁還是部分地佔據呢？
  18. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  19. We deduced a expressions for threshold voltage temperature coefficient of short channel most. and found that the coefficient is almost unchanged in a quite wide temperature range which is higher than the room temperature, but it increased sharply at high temperature

    推導了了一個短溝道most閾值電壓溫度系數表達式；發現短溝道most閾值電壓溫度系數在高於室溫的一個較寬的溫區內近似不變，但在溫度較高時迅速增大。
  20. We also experimentally observed the effect of sodium atom - molecular collisions and sodium atom - atom collisions on the line - shape and intensity of fluorescence spectra. in addition, the optically pumped infrared stimulated emission and energy transfer up - conversion process are observed in pr3 + : y2sio5, and with the threshold energy, temperature dependence and divergence angle for the stimulated radiation are measured

    此外還研究了摻雜在固體y _ 2sio _ 5中的pr ~ （ 3 + ）的光泵紅外受激輻射和能量轉移上轉換，分別測得了紅外受激輻射的閾值能量和發散角，並擬合得出了能量轉移速率。
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