threshold radiation dose 中文意思是什麼

threshold radiation dose 解釋
輻射閾劑量
  • threshold : n. 1. 門檻;入口,門口。2. 【心理學】閾限。3. 界限,限度。4. 【物理學】臨界值,閾。5. 入門,開始,開端。
  • radiation : n. 1. 發光,射光,放熱,放射,發射。2. 【物理學】輻射;放射物;輻射線[熱、能];照射(作用)。3. 【動、植】輻射形;【測】射出測量法;【醫學】射線療法。
  • dose : n 1 (藥的)一服,一劑;藥量,劑量。2 苦藥,討厭的東西。3 (酒中的)配料,增味劑。4 (處罰等)一...
  1. An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry

    該模型物理意義明確,參數提取方便,適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明,盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大,但從mosfet閾值電壓漂移量的擺幅這一角度來看,在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。
  2. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上,對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究,著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移( vth和vit 、 vot )與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  3. Simulating threshold voltage shift of mos devices due to radiation in the low - dose range

    低劑量輻照條件下的mosfet因輻照導致的閾值電壓漂移的模擬
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