threshold shift 中文意思是什麼
threshold shift
解釋
聽覺閾值差-
Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics
利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法 -
The second one : we studied the effect of temperature on performance of lds. it was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively. coefficient of temperature shift is 0. 24 / k, wheras characteristic temperature also decrease with rise of temperature
研究了溫度對激光器各參數的影響，隨著溫度的增加，閾值電流呈指數增加，輸出功率和斜率效率分別呈拋物線和指數關系遞減，同時特徵溫度也減少，波長隨溫度的漂移系數為0 . 24nm ，並且總結了一些溫度和結構設計方面的關系。 -
An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry
該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。 -
Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。 -
In the uv light region, the absorption dramatically increases that is caused by the absorption of the films substance, hi addition, as the heat treatment temperature increases the absorption threshold slightly occurs " red shift "
在紫外區，薄膜的吸光度急劇增大，而且，隨著熱處理溫度的增加，吸收閾值發生輕微的「紅移」 。這種降低是由於薄膜物質的吸收所致。 -
Similar to hntx - iv, 100 nmol / l hntx - v did n ' t effect the active and inactive kinetics of currents and did n ' t have the effect on the active threshold of sodium channels and the voltage of peak inward currents. however, 100 nmol / l hntx - v caused a 7. 7 mv hyperpolarizing shift in the voltage midpoint of steady - state sodium channel inactivation
1 / liintx一v也不影響ttx一s鈉電流的激活相和失活相，對鈉通道的激活閩值和最大激活電壓也無明顯改變，但能引起鈉通道的半穩態失活電壓有7 -
We analyzed the polarizing character, threshold condition, raman shift of srs in different polarizing pumping light. in addition, the empirical formulas on stimulated raman scattering are given. theoretical analyses and experimental results are in good agreement
對它們在不同偏振態泵浦光激勵下各級stokes的偏振特性、閾值條件、喇曼頻移等各參數進行了分析，並給出了經驗公式，其結果和實驗數據符合良好。 -
Mosfet ; radiation effects ; threshold voltage shift ; radiation sensitivity
Mosfet閾值電壓漂移輻照效應輻照敏感性 -
Simulating threshold voltage shift of mos devices due to radiation in the low - dose range
低劑量輻照條件下的mosfet因輻照導致的閾值電壓漂移的模擬 -
Conversely, critics contend that the doctrine and the fledgling offensive counterspace mission represent the intellectual underpinning of a major shift in us thinking that, whether intentionally or not, could lead to the global community crossing the threshold of combat in space
反過來說，評論家趨向于認為該條令及其催生的進攻性太空反擊任務代表了美國思想領域理性思維的一個主要轉變，無論是否故意這樣，它都會導致國際社會越過太空戰的雷池。
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