transistor bipolar 中文意思是什麼

transistor bipolar 解釋
非結晶型半導體物質
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  • bipolar : adj. 1. 【電學】兩極的，雙極的。2. 有兩種相反性質[見解]的。3. 關于或涉及地球兩極地區的。n. -ity
  1. Bigfet bipolar isolated - gate field effect transistor

    雙極型絕緣柵
  2. Hetero - junction bipolar transistor hbt

    異質接面雙載子晶體管
  3. Bipolar junction transistor - bjt

    雙極結型晶體管
  4. Bipolar junction transistor, bjt

    雙載子晶體管
  5. Bipolar junction transistor

    雙極面結型晶體管
  6. Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits

    半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。
  7. The course concentrates on circuits using the bipolar junction transistor, but the techniques that are studied can be equally applied to circuits using jfets, mosfets, mesfets, future exotic devices, or even vacuum tubes

    本課程集中講解使用雙極結晶體管的電路，但所學技術同樣適用於使用jfet ， mosfet ， mesfet ，未來的稀有裝置，甚至真空管的電路。
  8. High power solid modulator with insulated gate bipolar transistor

    絕緣柵控雙極晶體管大功率固態調制器
  9. In the synchronous " model, based on the idea of polygonal flux linkage locus, by means of constructing the switch state period table of three phrase voltage inverter is required. in the brushless model, the igbt ( isolated gate bipolar transistor ) switch state period table is gained by gal ( generic array logic ) which analyzes the signal of position feed - back

    在同步方式下，基於多邊形磁鏈軌跡法的思想，用作圖法求得三相電壓型逆變器的pwm波形序列；在無刷直流方式下，用gal對位置反饋信號進行邏輯綜合，得到開關管的導通規律。
  10. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  11. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  12. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  13. Insulated gate bipolar transistor modules arm and pair of arms

    絕緣柵雙極型晶體管模塊.臂和臂對
  14. A modern power electron power component igbt ( insulate - gate bipolar transistor ) is used as the main power switch component of power converter. it takes 80c196mc single - chip as core processor

    電源變換器的功率開關器件採用現代電力電子功率器件igbt （ insulategatebipolartransistor ，絕緣柵雙極型晶體管） ，控制系統以80c196mc單片機作為控制核心。
  15. Heterojunction bipolar transistor, hbt

    異質接面雙載子晶體管
  16. This paper demonstrates how to generate variable pwm waveform based on standard cpld device, the proposed circuit is incorporated with mcu to provide simple and effective solution for high - performance pwm converters. in the brushless model, the igbt ( isolated gate bipolar transistor ) switch state period table is gained by mc33035 which analyzes the signal of position feed - back

    這部分功能在cpld器件中用vhdl語言開發實現，其isp （在系統編程）方式使得設計與維護都比傳統方法方便靈活，由於逆變器開關元件的觸發信號是由硬體來產生的，因此更容易實現準確的高速實時控制。
  17. With respect to a bipolar transistor, the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction

    就雙極型晶體管而言，其門電流等於或超過必要的值，使發射極集電極充分導通的一種狀態。
  18. In a bipolar transistor, the control area or the electrical connection to the control area

    在雙極晶體管中，指控制區域或和控制區相連的導電連接。
  19. Ibm journal of research and development, 2000 offers great background on challenges facing chip designers, and how and why cmos have displaced bipolar transistor designs note especially table 1 !

    ， 2000年）則對晶元設計以及cmos如何取代和為什麼要取代二極體的問題給出了大量的背景知識（特別要注意其中的表1 ） 。
  20. A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy. the sige hbt

    室溫下該晶體管的直流電流增益為30到50 ，基極開路下，收集極-發射極反向擊穿電壓
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