transistor devices 中文意思是什麼

transistor devices 解釋
晶體管器件公司
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  • devices : 措施工藝裝備
  1. The course concentrates on circuits using the bipolar junction transistor, but the techniques that are studied can be equally applied to circuits using jfets, mosfets, mesfets, future exotic devices, or even vacuum tubes

    本課程集中講解使用雙極結晶體管的電路，但所學技術同樣適用於使用jfet ， mosfet ， mesfet ，未來的稀有裝置，甚至真空管的電路。
  2. Based on the analysis of transistor amplifier noise model, we select devices with low noise in reason. and the method how to reduce phase noise and phase jitter is also discussed

    依據晶體管放大器的噪聲模型分析合理選擇了低噪聲的元器件，對降低相位噪聲和相位抖動的方法作了一些探討。
  3. Ti introduces the silicon - based transistor which soon eclipsed germaninum devices in production volume

    Ti公司開發硅晶體管，從而在生產量上迅速超過鍺晶體管。
  4. Semiconductor discrete devices. detail specification for type 3da89 high - frequency power transistor

    半導體分立器件. 3da89型高頻功率晶體管詳細規范
  5. These devices include paper, tape, disc, vcd, semi - transistor storage device, integrated circuit chip and any other form which has the capacity to store information

    載體包括紙張、磁帶、磁盤、光盤、半導體存儲器、集成電路板卡以及其他可存儲計算機軟體的載體。
  6. The fabrication of the nano - structures and the study of nanoelectronic devices ( single electron transistor - set, single electron memory, etc. ) are one of the most important projects of the nanoelectronics and nanotechnology, of a study field with most vitality, progressive future, and it may bring magnitude effect to new technology revolution and industry in future

    納米結構的制備和納米電子器件（單電子晶體管、單電子存儲器等單電子器件）的研究是納米電子技術中最重要的研究內容之一，是最具有生命力、最具有發展前途，對未來新技術革命和產業可能帶來革命性作用的研究領域之一。
  7. The first chapter : generalizing the development situation of magnetic devices the second chapter : discussing mems and its basic situation, which is one of the most techniques in this century. the third chapter : discussing basic construction, operating fundamental and basic character. the forth chapter : design of basic construction, operating fundamental and manufacture technology for silicon magnetic - transistor by mems

    第2章論述了本世紀中最重要技術之一? ? mems技術及其基本概況第3章磁敏三極體的基本結構、工作原理和基本特性第4章採用mems技術製作硅磁敏三極體的基本結構、工作原理和製作工藝。
  8. Semiconductor discrete devices. detail specification for type bt51 npn silicon small power difference matched - pair transistor

    半導體分立器件. bt51型npn硅小功率差分對晶體管詳細規范
  9. Semiconductor discrete devices. detail specification for type 3dg216 npn silicon low - power difference matched - pair transistor

    半導體分立器件. 3dg216型npn硅小功率差分對晶體管詳細規范
  10. Semiconductor discrete devices. detail specification for type 3dk002 power switching transistor

    半導體分立器件. 3dk002型功率開關晶體管詳細規范
  11. Semiconductor discrete devices. detail specification for type 3dk404 power switching transistor

    半導體分立器件. 3dk404型功率開關晶體管詳細規范
  12. From light emitting components ( light emitting diode ? led, led display, infrared emitting diode ), light receiving components ( photo transistor, photo conductive cell ? cds, infrared receiver module ), to different sensing devices, we can offer perfect and complete products

    由發光元件（發光二極體，發光顯示器，紅外線發光二極體） ，感光元件（光敏晶體管，光敏電阻，紅外線接收組件） ，以致到不同功能的感應元件，均有完善及齊備的產品提供。
  13. Elet - v series integrated regulator burn - in system pmwd - v series burn - in system for microwave transistor devices

    Elet - v系列三端集成穩壓器老化系統
  14. Semiconductor discrete devices. detail specification for type 3dg135 silicon ultra high frequency low - power transistor

    半導體分立器件. 3dg135型硅超高頻小功率晶體管詳細規范
  15. Semiconductor discrete devices. detail specification for type 3dg144 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg144型npn硅高頻低噪聲小功率晶體管詳細規范
  16. Semiconductor discrete devices. detail specification for type 3dg143 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg143型npn硅高頻低噪聲小功率晶體管詳細規范
  17. Semiconductor discrete devices. detail specification for type 3dg142 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg142型npn硅高頻低噪聲小功率晶體管詳細規范
  18. One of the important research directions is the fabrication of nano electrical devices including transistor and sensor by bottom - up method using carbon nanotubes as building block

    一個主要的研究方向是以碳納米管為模塊，採用自下而上的構築方式制備納電子器件（包括晶體管、傳感器等） 。
  19. The dominance and properties of the cmos integrated reference were also described, and the research meaning was pointed out. related device theory and process model used in design were described. the temperature related model and the influencing factor of two active devices, subthreshold mosfet and pnp substrate transistor, based on cmos process were analyzed and compared, and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference

    闡述了設計中相關的器件理論與工藝模型，對cmos工藝下的兩種有源器件，即亞閾值工作狀態下的金屬場效應晶體管（ mosfet ）及襯底pnp雙極型晶體管（ bjt ）的溫度模型及其影響因素進行了分析和比較，指明襯底pnp雙極型晶體管更適合作為基準源的溫度補償元件。
  20. Semiconductor discrete devices detail specification for type 3dg44 silicon uhf low - noise transistor

    半導體分立器件. 3dg44型硅超高頻低噪聲晶體管.詳細規范
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