transistor effect 中文意思是什麼

transistor effect 解釋
晶體管效應
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  • effect : n 1 結果。2 效能，效果，效力，效應，作用，功效；影響。3 感觸，印象；外觀，現象。4 旨趣，意義。5 ...
  1. Algan gan heterostructure field effect transistor materials grown by molecular beam epitaxy

    生長的跨導為186
  2. To achieve the high impedance required specially designed "electrometer" vacuum tubes, field effect transistor must be used in the input stage.

    為適應高阻抗需要，儀器輸入電路中須用特殊設計的靜電計專用電子管、場效應晶體管。
  3. Metal semiconductor field effect transistor mesfet

    金屬半導體場效應管
  4. Bigfet bipolar isolated - gate field effect transistor

    雙極型絕緣柵
  5. Modulation doped field effect transistor modfet

    調制雜場效應管
  6. Jfet junction type field effect transistor

    結型場效應晶體管
  7. Carbon nanotube field effect transistor

    電界?果
  8. Fet field effect transistor

    場效應晶體管
  9. Field effect transistor

    場效應電晶體
  10. Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits

    半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。
  11. Unipolar field effect type transistor

    單極場效應晶體管
  12. The key parts of barretter are made of irf840 field - effect transistor, the magnetic ring and high frequency choking coil which adopting negative temperature index. such components can provide barretters a wide applicable voltage 160v - 250v. low power consumption, minor temperature rise, stable functions, long life - span

    鎮流器核心元件採用irf840場效應三極體，磁環及高頻扼流圈採用負溫系數，這樣的元件選擇使整流器適用電壓范圍寬160v - 250v ，功耗低，溫升小，性能十分穩定，確保其擁有很長的壽命。
  13. In the case of layout design, discussed the effect and application of the transistor matching in the circuits design deeply. demonstrated the circuit layout check by lvs design

    在電路的版圖設計方面，較深入地討論了晶體管的匹配在電路版圖設計中的作用和應用，通過lvs對電路的版圖檢查進行了具體說明。
  14. Current research of the technique of ga diffusion and the negative resistance effect of open - tube ga - diffusion transistor are emphasized

    重點介紹了目前開管ga擴散工藝的發展現狀和開管擴鐮晶體管負阻效應的研究現狀。
  15. Rapid screening test methods for thermal sensitive parameter of mos field effect transistor

    Mos場效應晶體管熱敏參數快速篩選試驗方法
  16. With the popular sources and models of static power fully discussed at first, the stack effect of transistor - level and logic - level cmos circuits are analyzed in detail according to the broadly adopted uc berkeley bsim model

    這是一款risc指令集的低功耗處理器晶元，它採用哈佛總線結構，兼容了avr指令集，具有4kb片內sram ， 128kbflash （暫時處于片外） ，除了
  17. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146

    半導體分立器件. cs146型硅n溝道耗盡型場效應晶體管.詳細規范
  18. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范
  19. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范
  20. " for their researches on semiconductors and their discovery of the transistor effect

    發明晶體管及對晶體管效應的研究
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