transition resistance 中文意思是什麼
transition resistance
解釋
過渡電阻- transition : n 轉變，演變，變遷，變化；飛越；過渡期；【音樂】變調，轉調；【修辭學】語次轉變；【語法】轉換；【...
- resistance : n. 1. 抵抗，反抗，抗拒，抵禦；敵對，抵抗力，反抗力，阻力，【生物學】抗病性。2. 【電學】電阻；阻抗；電阻器。
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The second part analyses the resistance during the reform program which mainly arising from the following aspectsrthe ideological obstacle on the reformation ; the difficulties on the function transition of the local govemment ; the inconvertible vested interest of the local government ; the legal system of administrative organizations is not in perfect condition ; lack of authorized restrictive mechanism ; the limit maneuver of people diversion ; social welfare system reform and other auxiliary reforms are backward
第二部分分析了市縣鄉政府機構改革的阻力。即在市縣鄉政府機構改革問題上存在著思想障礙；職能轉換難；部門利益化的阻礙；行政組織法制不健全，缺乏權威有效的制約機制；人員分流的迴旋餘地小；社會保障制度改革和其它配套改革滯后等。 -
In order to avoid gas blast because of short circuit, it should popularize shielded mine cable under coal mine. except insulated surface of part products adopting tinnint brass wires and nylon wires, its protective shield adopting conducting rubber and shielded layer which transition resistance not bigger than 3k. the protective layer adopt high machinery chloroprene rubber which is fireproof
為防止電纜相間短路而造成瓦斯氣體爆炸，在煤礦井下應大力推廣使用屏蔽礦用電纜，除部分產品的絕緣表面採用鍍錫銅絲和尼絲交叉紡織之外，其外屏蔽型電纜的保護屏蔽採用導電橡皮及屏蔽層，其屏蔽層的過渡電阻不大於 -
The temperature dependences on the resistance in all the thin films show that in the low temperature range the width of eg band level changes the transports, but in the high temperature range the thin films forms the small polarons hopping conductivity. the phase transition induced by the current is explained by the demagnetization and lattice distortion
在高溫部分，材料呈現小極化子跳躍形式輸運特徵；實驗研究了不同偏置電流對薄膜的相變影響，表明電場可以引起材料中磁性的變化和晶格畸變，導致相變溫度點向低溫方向移動；材料的光致相變研究表明光子能量、光強和極化方向對輸運性質有影響。 -
The properties of lacamno3 films were enhanced dramatically with a post annealing treatment in high temperature and high oxygen pressure. the films show the highest so far tmi, which reaches the 300k, the transition of resistivity is kept in a narrow temperature range and the temperature coefficient of resistance ( tcr ) is about 5 - 8 %
以高溫、高氧壓的條件對薄膜進行後退火處理，薄膜性質得到極大改善，轉變溫度點提高到了300k ，電阻?溫度系數也達到了5 - 8 ，不僅提高了轉變溫度點，而且使轉變保持在一個較窄的溫度區間內。 -
This part point out the necessity and resistance of gbm reform in our country economic society transition period, and propose that the accession to the wto is the push pharmaceutical of gbm reform
指出了我國經濟社會轉型時期政本管理模式變革的必要性及其阻力，並提出入世是政本管理模式變革的推動劑。 -
By reducing bromine content and adding aluminum hydroxide in the surface of substrate for the printed circuit board, comparative tracking index ( cti ) of the substrate is improved significantly, meanwhile the size stability, heat resistance, the glass transition temperature of the substrate are improved too
摘要通過降低印製電路板的基板表層的嗅含量並加入氫氧化鋁，顯著提高了基板的相比漏電起痕指數（ cti ） ，並同時提高了基板的尺寸穩定性、耐熱性、玻璃化溫度。 -
The experimental results of the flow characteristics of the mmc heat sink indicate that the critical reynolds number signifying the transition from laminar flow to turbulent flow is in advance ; under the same experimental conditions, the variation in entrance direction of the microchannel inlet and outlet has little effect on the microchannel ; the experimental values of the friction factor of the de - ionized water in a microchannel agree well with those calculated using the theoretical laminar formula ; furthermore, a comparison of the experimental results and simulation results shows that navier - stokes equation and rng - turbulence model can be used to model the laminar and turbulence flow regions in a microchannel ; meanwhile, the correlations of the flow resistance in the turbulent flow regions for the de - ionized water as the working fluids are obtained from experiments
對歧管式單通道熱沉流動特性的研究結果表明，微通道內流體流態由層流向紊流轉變的臨界雷諾數提前;改變流體的進出口方向對熱沉總壓降造成的影響很小;摩擦系數的實驗值與理論值較接近;數值模擬結果能夠與實驗值較好吻合;並由實驗給出了紊流區流動阻力的實驗關聯式。此外，選用十二烷基硫酸鈉（ sodiumdodecylsulphate ， sds ）以及烷基多糖苷（ alkylpolyglycoside ， apg ）作為減阻添加劑，研究了表面活性劑添加對微通道流動特性的影響。 -
The transition resistance with shield of masterstrok core converted into 20 is not more 3k
主線芯屏蔽層的過渡電阻換算到 -
The results of simulation show that the two algorithms are dependable and high precision, almost without any alteration when fault type, transition resistance and system parameter change
模擬結果表明，本文提出的兩種雙端故障測距新演算法具有可靠性高、測距精度高的特點，完全不受故障類型、過渡電阻和系統參數的影響。 -
By means of resistance and capacitance coupled negative feedback method to control the plasma discharge development process and prevent the transition from glow discharge to spark discharge in a pin - to - plate static air plasma generator, a stable alternative current atmospheric glow discharge is produced successfully
在靜態大氣壓空氣針板等離子體發生器中，採用阻容耦合負反饋方法控制等離子體放電發展過程，成功地抑制了輝光放電向火花放電的過渡，產生了穩定的交流輝光放電。 -
On the other hand, relationship between doping concentration, phase transition temperature, magnitude of resistance change and hysteresis width was investigated
在此基礎上，本文進一步探討了摻雜濃度與vo _ 2薄膜相變溫度、電阻突變數量級以及熱滯寬度的關系。 -
Then, the effect of vacuum annealing temperature on vo _ 2 thin film phase transition temperature, magnitude of resistance change and hysteresis width by doping zr ~ ( 4 + ) was discussed
（ 2 ）本文以摻鋯為例，探討了不同的真空退火溫度對vo _ 2薄膜的相變溫度、電阻突變數量級以及熱滯寬度有何影響。 -
Results show that the increase of semiconductor - metal phase transition temperature and the decrease extent of resistance is linear to zr ~ ( 4 + ) doping content, while the hysteresis width of vo _ 2 thin film fluctuates with zr ~ ( 4 + ) doping content
實驗結果表明:隨zr含量的增加， vo _ 2薄膜的半導體-金屬轉變溫度和電阻突變數量級呈線性下降，同時，隨摻雜量的增加， vo _ 2薄膜的熱滯寬度的變化規律是先減小后增大。 -
Vo _ 2 is a typical thermochromic material. with the increase of temperature, the semiconductor - to - metal transition will occur at 68 c ; with the abrupt change of vo _ 2 crystal structure, electrical resistance and optical index of refraction transmissivity and reflectivity will change, which results in great application potentials in many fields
Vo2是一種相變型金屬氧化物，隨溫度的升高，在相變溫度（ tc = 68 ）發生從低溫單斜結構向高溫四方金紅石結構的轉變，同時，伴隨著電阻率和紅外光透過率的突變。 -
The photo - induced phase transition of the different light intensities, photo - energies and directions of the polarized light is investigated. it suggested that the photo excites the down spin eg electrons and destroys the spin order system of the thin films. the relation between the he - ne laser reflectivity of the thin film, applied current and resistance was analyzed by the optics theory of solid state physics
光子通過激發e _ g向下電子的躍遷，從而改變材料自旋極化方向，影響體系的輸運行為；首次研究了cmr薄膜的激光反射率和偏置電流的關系，並用固體光學理論對其定性分析，表明反射率的變化是由於電場引起材料的晶格畸變，改變了極化率，從而導致材料的折射率和反射率發生改變。 -
Below 280k the degenerated states were relieved and the electrons turned to the ordered states from the disordered, leading to the resistance increase suddenly and the transition from the cubic to the tetragonal structure
280k以後， mn原子軌道電子態的簡並被解除，電子由無序向有序狀態轉變，電阻隨溫度的降低，急劇增加，材料結構由立方相向四方相轉變。 -
Compared with testing results at different annealing temperatures ranging from 350 to 500 c, it was found that vo _ 2 film annealed at 450 c exhibits lower phase transition temperature and significant resistance change
通過對比不同退火溫度下的測試結果可知:經450退火后的摻雜vo _ 2薄膜與其它退火溫度所得的vo _ 2薄膜相比，具有較低的相變溫度以及較為明顯的電阻突變數量級。 -
The transition to the turbulent flow happened when the reynolds numbers ( based on the height of mini - channel ) were between 1200 and 1400. and it was found that the critical reynolds numbers became larger when the friction - resistance factor got smaller
流動在雷諾數（通道高度雷諾數）為1200 1400時發生轉捩，且摩阻越小的通道發生轉捩的雷諾數越大。 -
The results indicates that superconducting mgb2 thin films can be prepared by hfcvd in a single - step with the maximum critical transition temperature tc of 36k ; the best critical transition temperature tc of thin films grown by hpcvd in a single - step is 34k. the optimal zero resistance temperature tco of thin films fabricated ex situ is 37 k by post - annealing of precursor b film at 800 for 1 h under high mg vapor pressure
實驗結果表明，用hfcvd法在400原位制備了臨界溫度為36k的mgb2超導薄膜；用hpcvd法在700原位制備了臨界溫度為34k的mgb2超導薄膜；將300制備的前驅物b膜在mg蒸氣中800保溫1h非原位退火，制備了臨界溫度為37k的mgb2超導薄膜。 -
The other is based on genetic arithmetic. simulation results show that the results could be got easily, stably accurately by three methods, which is totally not affected by the type of fault, transition resistance, system parameters and avoiding the fake root problem
大量模擬結果表明：本文提出的三種方法計算較為簡單，穩定性好，具有很高的精度，完全不受故障類型、過渡電阻和系統參數的影響，且有效避免了偽根問題。
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