tunneling current 中文意思是什麼

tunneling current 解釋
穿隧電流
  • tunneling : 管道傳送，隧道，管道傳輸
  • current : adj. 1. 通用的，流行的。2. 現在的，現時的，當時的。3. 流暢的；草寫的。n. 1. 水流；氣流；電流。2. 思潮，潮流；趨勢，傾向。3. 進行，過程。
  1. Tunneling process is important in the low to moderate current density range.

    在中等及中等以下電流密度下，隧道穿透過程是重要的。
  2. But there may be no practical way to make these insulating layers much thinner, because current flow by quantum tunneling makes them progressively worse insulators

    但不能讓絕緣層更薄了，因為量子穿隧電流會降低絕緣效果。
  3. So a conclusion can be got that the annealing in n2 raises the la2o2, stability. 3. the exact solution and wkb approximation are compared, the exact solution agrees with the wkb approximation in calculating the mono - layer sio2 tunneling current, but the wkb approximation is inappropriate for the dual layer oxide - lanthanum structure, while the exact algorithm can give a exact result

    比較了wkb和精確解法計算柵介質隧穿電流的方法，精確解法在解決單sio _ 2層和wkb準經典近似有相同的結果，但是wkb不適合計算la _ 2o _ 3 / sio _ 2雙層柵介層的隧穿電流，而精確解法能精確地計算雙層柵介質隧穿電流。
  4. We introduce the fabrication of all samples and anneal of fexcu ( 1 - x ) granular film in detail. the configuration of granule film is investigated by scanning tunneling microscope ( stm ). the matter phase is analyzed by x - ray diffraction ( xrd ). the hysteresis loop of co / al2o3 / feni magnetic tunnel junction is studied by vibrating sample magnetometer ( vsm ). we use microresistance test system ( mts ) to investigate the character of resistance, conductance, voltage and current

    用掃描電子顯微鏡（ stm ）觀察顆粒膜樣品的表面形貌；用x ?射線衍射儀（ xrd ）對顆粒膜樣品進行物相分析；用振動樣品磁強計（ vsm ）對co al _ 2o _ 3 feni隧道結的磁滯回線作了研究；用微電阻測試系統對樣品電阻、電導、電流、電壓相關特性進行詳細的研究。
  5. Hot electron tunneling mechanism of current collapse in gan hfet

    溝道熱電子隧穿電流崩塌模型
  6. The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique

    利用襯底熱電子注入技術，正電荷輔助隧穿電流可被大大的減弱。
  7. Secondly, the transient characteristics of fn tunneling and hot hole ( hh ) stress induced leakage current ( silc ) in ultra - thin gate oxide are investigated respectively in this dissertation

    其次，本文分別研究了fn隧穿應力和熱空穴（ hh ）應力導致的超薄柵氧化層漏電流瞬態特性。
  8. The tunneling current is obstructed when the two ferromagnetic layers have opposite orientations and is allowed when their orientations are the same

    若兩側的鐵磁層磁性方向相反，穿隧電流就被擋住，反之則可通過。
  9. It provided a in - depth discussion about the mechanism of tunneling effect as well as the i - v relation and the expression of tunneling current based on the model of metal - insulator - metal

    對隧道效應理論進行了深入探討，並以金屬?絕緣層?金屬結為模型，討論了隧道效應中的i ? v關系以及針尖一樣品間的隧道電流表達式。
  10. According to the experiments of the production practice in sihe coal mine, and based on studying and analyzing on the current status of the successive coal - mining and fully - excavating equipment, this paper expounds the reasons and necessity of transforming the tunneling equipment and construction technology, introduces the successive excavating equipment developed by sihe coal mine itself and the construction technology, and compares the benefit obtained by the successive excavating equipment

    根據寺河礦的生產實踐經驗，在對連采、綜掘設備現狀進行研究分析的基礎上，闡述了掘進設備及施工工藝變革的原因和必要性，介紹了寺河礦自行研製開發的連掘機及施工工藝，並對連掘機取得的效益進行了比較。
  11. We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures

    對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明，在相當寬廣的非共振電子入射能區，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構，共振減弱；對于電子隧穿不同磁壘磁阱構成的雙磁壘結構，無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振，這時的電子可實現理想的共振隧穿.研究同時表明，磁量子結構中存在著顯著的量子尺寸效應和負微分電導
  12. Current flows through the device by the process of quantum tunneling : a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator

    電子在元件中利用量子穿隧效應流動，少量的電子可穿過絕緣層的障礙到達另一邊。
  13. For the first current plateau ， two kinds of sequential resonant tunneling of - process and - x process are observed in the wide barrier gaas / alas superlattice under various pressures for p < 2kbar ， the high field domain is formed by - process ， while for p > 2kbar ， the high field domain is formed by - x process when the barrier width was decreased to 2nm, we found that ground - state -

    對于寬壘（ > 3 . 5nm ）的gaaa / alas超晶格，當流體靜壓力超過臨界壓力2kbar后，平臺寬度隨壓力的升高而收縮。對于窄壘（ 2nm ） gaaa / alas超晶格， u - i曲線上的平臺將不隨壓力變窄。
  14. Combining the study characteristic and the current construction method of the bi - arch tunnel in domastic and aboard, the paper deeply study the three heading construction method and the benching tunneling construction method

    結合目前國內外對雙連拱隧道的研究特點以及國內外對雙連拱隧道施工方法的現狀，本文針對三導坑法和上下臺階法進行了較為深入的研究工作。
  15. Based on the current studying situation of the stratum displacement caused by shield tunneling and the interaction of soil and lining of tunnel, the thesis has discussed the shield tunneling process, which has significantly influenced the stratum displacement and earth pressure

    本文論述了盾構法隧道對周圍地層的影響和盾構襯砌結構與土體共同作用的研究現狀及存在的主要問題，即目前的研究基本上沒有考慮施工過程的影響。
  16. The maximum one side output power of uncoated lasers attain to 2w and the minimum threshold current is 120ma. thereafter, algalnp and algaas material system lateral real refractive index waveguided 650nm / 780nm double wavelength multiquantum well lasers for dvd - rom driver and dvd player ' s optical pickup system are simulated and designed on the basis of the experiment of conventional lasers and the former research of tunneling cascade devices

    在此之後，結合650nm附近波長的常規algainp gaas多量子阱激光器的實驗結果與以往隧道級聯器件的研究，設計並模擬分析了基於algainp材料與algaas材料的可用於dvd - rom驅動器和dvd播放機光學讀取系統的側向實折射率導引隧道級聯650nm 780nm雙波長多量子阱激光器。
  17. An empirical direct tunneling current expression for ultra - thin oxide nmosfets

    器件的直接隧穿電流經驗公式
  18. The electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena. we have optimized the simulation using matlab software. comparing the processing data, we know that various ode commands solve problems with different difficulties

    本論文主要內容包括以下幾個方面：運用matlab軟體進行模擬計算的演算法優化，從比較摻雜弱耦合gaas / alas超晶格模擬計算的過程數據可得，不同的ode命令可求解問題的難度是不同的：針對較低難度問題，即研究固定偏壓下超晶格縱向輸運的求解問題（ du / dt = 0 ） ，一般首選ode45 。
  19. In order to resolve the questions, a new high k material is developed instead of the traditional sio2 gate dielectric material to reduce the tunneling current

    目前，正在利用介電常數較大的材料來代替傳統的sio _ 2作為柵介材料，來減少隧穿電流。
  20. The calculational result by exact solution shows that the substrate inject current is larger than gate inject current in the same condition. the influence of the thickness of sio2 and la2o3 on the tunneling current is given to compare much different thickness of sio2 and la2o3 tunneling current on the same equivalent oxide thickness ( eot ) condition

    在等效氧化層厚度相同的情況下，比較了幾種不同的sio _ 2層厚度和la _ 2o _ 3層厚度結構的隧穿電流的大小，給出了sio _ 2層厚度和la _ 2o _ 3層厚度對隧穿電流的影響。
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