type doping 中文意思是什麼
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The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion. 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting
6文章還對立方氨化硼薄膜的成核和生長機理，氮化硼薄膜的n型摻雜機制和bn型）侶i …型）異質結的電流輸運機制進行了探討。 -
In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators
本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。 -
The voltage of lithium - intercalation reaction, impedance and structural stability of intercalation - type cathode material were analysed and calculated. theoritical results show that the reaction voltage depends on the content of lithium and the bond energy, and that the key ways to lower the electrode impedance are to increase the electronic conductivity of the electrode and the diffusion coefficient of lithium ion in the host and to decrease the size of powder. in addition, the thermal stability of lithium - insertion structure can be improved by using crystallographic co - lattice theory and doping treatment
本文從嵌入式陰極材料的嵌鋰反應的電壓、阻抗及結構穩定性的分析和理論計算著手，得到了電壓取決于基體中各種離子間的鍵能及鋰含量、降低電極阻抗的關鍵是提高電子型導電性和li ~ +在基體中的擴散系數及減小粉末粒度的理論依據及其利用晶體的共格原理和摻雜改性的方式來提高材料嵌鋰結構的熱穩定性的設計思路。 -
It is showed that after doping s the bn thin films of n - type conductivity are obtained
研究表明，未摻雜的氮化硼薄膜電阻率為為1 -
2 for the first time, rf sputtering method and vapor doping method have been combined to prepare n type bn films. bn films doped with s are n type conductivity
摻s后的氮化硼薄膜表現出n型導電，未摻雜的氮化硼薄膜的電阻率1 . 8 1011 cm ，摻雜后的氮化硼薄膜的電阻率為7 . 3 107 cm 。 -
Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大 -
It shows that the particle number will fluctuate with the recombination coefficient ; 3 ) the dynamic process of the n - type doped diamond film is simulated. the particle distributions of s, s + and ar + are gotten. the result has important reference to the investigation of n - type diamond film doping at low temperature
（ 3 ）對不同氣壓、偏壓和不同的配比情況下n型硫摻雜的金剛石薄膜的動力學過程進行了模擬，得出了摻雜元素s和s ~ +以及惰性氣體ar ~ +的粒子數分佈，計算結果對摻雜過程的研究有重要的參考價值。 -
Based on the theory of glow discharge, the angle distribution of electron and the recombination process are simulated by adopting monte carlo method. the doping process of n - type diamond film is investigated by this method for the first time. the results indicate : 1 ) the scattering angle of electrons near the substrate is mainly lange - angle, which is helpful to grow diamond film over a large area when glow discharge is kept ; 2 ) after considering the recombination process, the number of particles distribution is provided
主要結果如下： （ 1 ）研究了電子在雪崩碰撞和分解電離后的角分佈情況，結果表明基片附近電子的散射以大角散射為主，在維持輝光放電的條件下，較高的偏壓和工作氣壓對金剛石的橫向連續成膜是有益的； （ 2 ）考慮了低溫合成金剛石薄膜過程中電子與各種碎片粒子的復合過程，給出了不同的復合系數情況下的粒子數分佈，結果顯示各種碎片粒子的分佈隨復合系數的變化會出現粒子數分佈的漲落現象。 -
High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique. successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out
本文研究了在gaas和gap襯底上，本徵型和n型al摻雜zns基單晶薄膜的分子束外延生長，獲得了高質量的單晶外延薄膜。 -
The crystal structure of the quantum paraelectrics is mainly perovskite type, similar to most of the ferroelectrics, and external factors, e. g. impurity doping, may induce ferroelectric phase
量子順電體的結構和鐵電體很相似，大部分屬于abo _ 3的鈣鈦礦結構，所以應力或摻雜等易使之成為鐵電體。 -
The main contents of the thesis are as following : ( 1 ) thermal neutrons irradiating the silicon wafer gives rise to fractional transmutation of silicon into phosphorus and dopes the silicon n - type. the method of p - type doping zno by proton transmutation doping was presented by reference to that of the silicon
本論文的主要內容和結果如下: （ 1 ）借用「熱中子輻照矽片使部分硅嬗變為磷，從而將硅摻雜成n型」的思想，從質子嬗變角度討論了實現zno材料的p型摻雜方案。 -
The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter
使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。 -
The sheet resistivity dramatically decreases to 106 ? / ?. the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too. te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films
，面載流子濃度增大到109 / cm2的數量級，遷移率亦增大到104cm2 / v . s ，摻雜te元素改善了cdte薄膜的電學性質，使其變為良好的p型半導體。 -
Further investigations show that new surface states are derived by the doping, which may lead to the changes of the surface properties of sno _ 2 ( 110 ). it seems that the type of doping atom has great effects on the positions of doping states
值得注意的是， ti摻雜對co吸附影響較小，而摻雜ru原子可顯著增強表面對co的吸附，尤其是五配位sn原子被ru取代后，具有最大的吸附能。 -
In this dissertation polyaniline conjugated conducting polymer with different structural texture and properties is prepared, using ( nhu ) 2s3oa / llci solution system. the molecular structure of undoped polyaniline is characterized. polyaniline with different conductivity can be gotten by changing the type of dopant and doping condition
再採用（ nh _ 4 ） _ 2s _ 3o _ 8 hci溶液體系制備出不同性能的聚苯胺導電聚合物，對不同的鹽酸濃度、不同氧化劑與苯胺的摩爾比、不同的溫度下合成的聚苯胺進行了性能上的比較，並對本徵態聚苯胺的結構進行了表徵。 -
In this paper we mainly study preparation, properties and n - type doping of cubic boron nitride thin films
本文主要研究立方氮化硼的制備、性質和n型摻雜等內容。 -
Then we grew the material with different active layer growth temperature, different v / ratio, different doping concentration and form. after that, we tested these materials by photoluminescence ( pl ) technology, and got the best growth condition according to the results of photoluminescence spectra. our result was that the active layer growth temperature was 700, v / ratio was 60, waveguide layer doping was gradual changed ( n - type doping with sih4 from 190sccm to 590sccm, p - type doping with dmzn from 90sccm to 490sccm )
然後在不同的有源區生長溫度、 /比、摻雜方式及濃度情況下對激光器材料進行外延生長，並利用光熒光（ pl ）技術對不同生長條件下外延材料的光致發光特性進行了測試對比，結果表明在下列條件下生長出來的材料具有更好的光學和電學性能：有源區生長溫度在700 、波導層/比選擇為60 、 n型波導漸變摻雜190sccm - 590sccm的sih _ 4 、 p型波導漸變摻雜90sccm - 490sccm的dmzn 。 -
It is concluded that for cvd method the cubic phase content and adhesion are highly effected by the crystal lattice mismatch between c - bn and substrate materials, however, for sputter method the crystal lattice mismatch between c - bn and substrate materials affects the quality of c - bn thin films very little. 5 n - type doping of bn thin films and preparing of bn ( n - type ) / si ( p - type ) heterojunctions adding s into the mixture of argon and nitrogen used as working gas, we sputtered 1ibn target to deposit bn thin films so as to study the n - type doping of bn thin films, and bn ( n - type ) / si ( p - type ) heterojunctions were prepared
5實現了氮化硼薄膜的n型摻雜，成功制備出bn型）乃…型）異質結並且首次系統研究了其卜v和cv特性我們用射頻濺射法濺射六角氨化硼靶，在工作氣體氮和氮中混入s ，沉積氮化硼薄膜，以研究氮化硼薄膜的n型摻雜，並得到bnh型）侶i …型）異質結。
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