under annealing 中文意思是什麼

under annealing 解釋
不完全退火
  • under : adv 1 在下，從屬著，服從著。 bring under get under keep under 等〈參看各該動詞條〉。 The ship wen...
  • annealing : 熱處理
  1. One is to improve the photoconductivity by annealing the mpc film under magnetic field ; the other is to form composite multi - layer film of zno / pbpc and sno / pbpc, to change the spectral response range of mpc films

    一是通過磁場熱處理提高酞菁薄膜的光電導性能；二是通過將p型酞菁與n型材料異質復合，改變光譜響應范圍。
  2. The corrosion behavior of nanocrystalline ( nc ) copper bulks with various grain sizes prepared from igc ( inert gas condemsation ) and vacuum annealing in comparison with conventional microcrystalline ( mc ) copper ( as - rolled and electrolytic ) in acid copper sulphate solution and neutral solution containing chlorides under free corrosion conditions and anodic polarizations has been studied using potentiodynamic polarization, potentiometric analysis, cyclic voltammetry and electrochemical impedance spectroscopy. x - ray diffraction was used to estimate the grain size of the annealed nc copper. field emission gun scanning electron microscopy and x - ray energy - dispersive spectroscopy was used to characterize the surface morphology and analyze the surface composition after the polarization and potentiometric test of both nc and mc copper

    本文研究了用igc （惰性氣體蒸發凝聚原位溫壓法）制備並真空退火到不同晶粒尺寸的納米晶銅和微米晶銅（冷軋紫銅、電解銅）在酸性硫酸銅溶液和中性含氯溶液中，在自腐蝕狀態和陽極極化狀態下的腐蝕性能。使用了動電勢極化、電位測定、循環伏安法（ cv ）和電化學阻抗譜（ eis ）等方法。 x -射線衍射（ xrd ）的方法用來估算納米晶銅晶粒尺寸。
  3. The hydrogen source used is high purity of 99. 9999 %. for comparison, the annealing treatments were processed under ambient pressure in air and nitrogen atmosphere respectively

    在kno3溶液中進行液相攙雜的納米碳管，其儲氫能力明顯提高，並且隨摻雜濃度增加而提高。
  4. And then, we measured x - ray diffractive spectrum of samples and investigated the crystal lattice structure of samples treated under different annealing temperature and different implantation condition comparing the diffraction peaks

    然後，通過x射線衍射測量了樣品的衍射譜，通過比較不同樣品衍射峰的形狀，了解了不同退火溫度及注入條件下樣品的晶格結構情況。
  5. Besides, scan rate and cycle period also affect the result ; co - deposition of dualistic oxide is a focus of research, as an element in the same group, ir is selected. deposition rate of composition is decreased by the adding of ir composition, and when the proportion of ir exceeded 50 %, composition procession can be ceased. but cooperation of ir and ru oxide can highly increase the specific capacitance of active material ; annealing treatment under a certain temperature can help to change the hydrate ru composition into mixture state ru oxide, accordingly increase the stabilization of active material

    研究表明:電解液的配製過程中，氯化釕濃度、溶液ph值、陳化時間、溶液溫度對電鍍效果均有影響，其中溶液ph值是最主要的影響因素;在儀器的使用條件探索中，理論結合實驗確定了本電鍍液體系循環伏安電勢窗的理想范圍，並發現循環伏安掃描速度和掃描周期對電鍍結果也有較大影響;混合氧化物的共沉澱是目前研究熱點，在此選用與釕同一族的銥作為共沉澱元素，銥的加入會阻礙氧化物的沉積速度，銥的比例超過50 %會使沉積作用停止，但是二元氧化物的協同作用使沉積的活性物質比容量大大提高;一定溫度下退火后處理作用會使水合釕化物轉變成混合價態的氧化釕，從而提高活性物質的穩定性。
  6. The tbzre glass has great forming ability, which can form glassy body under relative slow cooling ratio. moreover, the technique of glass ' s annealing is easy. the npre - 1 glass has strong viscosity

    其中亞碲酸鹽玻璃（ tbzre ）成玻能力強，在較慢的冷卻速率下也能得到非晶玻璃；且退火工藝簡單，退火溫度下保持一小時后再冷卻到室溫即可。
  7. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  8. The effects of the sulfidation parameters on the microstructure and photoelectrical characteristics of fes _ 2 thin films have been investigated by the sulfidation annealing for the fe films under different temperature, time and pressure

    本文採用不同的硫化溫度、時間和壓力對相同厚度的fe膜進行硫化處理來研究硫化參數對薄膜組織和光電性能的影響。
  9. Another possible reason for this phenomenon is that with higher temperature, the mobility near defects of carbon atoms in grown carbon nanotubes would be also elevated, which gave carbon atoms higher mobility and have chance to readjus to decrease or eliminate some defects. a series of pretreatments and modifications including purification, annealing and doping were performed before hydrogen storage experiments carried out at room temperature under modest pressure ( 12mpa )

    在氮氣中進行退火處理納米碳管的儲氫性能高於在空氣中退火的納米碳管，主要原因是在空氣中退火時，納米碳管的表面引入了大量的氧官能團，而氧官能團能夠占據納米碳管的缺陷位，減少了氫的可吸附位置，阻礙氫進入納米碳管，從而降低了納米碳管的儲氫能力。
  10. Under a unified frame, different despeckling sub - algorithms are designed to despeckle different kinds of regions : a modified acmap algorithm ( simulated annealing correlated neighborhood map despeckling algorithm ) is used to depress the speckle in homogeneous regions, and the macro structural information is introduced into the despeckling algorithm in heterogeneous regions to protect the structures

    在統一的框架下，針對不同的描述模型的特點設計了相應的相干斑抑制方法。針對平穩區域設計了改進的acmap演算法（基於模擬退火和相關鄰域的最大后驗估計相干斑抑制演算法） ，針對非平穩區域將分割得到的宏觀結構信息引入到演算法中，有效的保護了宏觀結構性信息。
  11. Now if we suppose that the rated temperature limit of any chip were identical, confining the highest temperature in the rated limit is the most important, for this purpose i apply the principle of annealing algorithm to the optimization of place distribution design. under the unvaried condition of thermal dispersion, we can get the least temperature of the maximum value in some kind of chip array

    為了使得電子元件最大溫度負荷在特定散熱狀態下達到最低（低於額定的最高溫度值） ，我們將模擬退火演算法的優化設計思想應用到電子元件陣列的布局優化中，使得在不改變外部散熱條件的情況下，僅僅通過電子元件位置分佈的改變就取得降低其最高工作溫度的效果。
  12. The new vibrational infrared absorption band at about 485cm - 1 was annealed at about 400. it was difficult to annealing v - o complex in fast neutron irradiated si under 600 for 1h

    同時快中子輻照后硅中產生v - o復合體等缺陷，在低於600 、 1小時的退火也難以消除，表明快中子輻照直拉硅中的氧相關缺陷更加復雜。
  13. Annealing the v2o5thin film at 480, under l - 2pa for 20 minutes, the vo2 polycrystalline thin film with the resistivity change larger than 3 orders through the transition temperature was obtained. the transition temperature was influenced by the heating condition in vacuum

    實驗證明，選擇合適的成膜熱處理條件和真空烘烤條件是實現sol - gelv _ 2o _ 5結構向vo _ 2結構成功轉換的關鍵。
  14. The calculation determined the main point defect under different cd pressure and the reaction enthalpies and entropies and the equilibrium constants in ( cd, zn ) te according to the quasi - chemical equations written for cdte sublattice. also the recipe of two - zone annealing process for cd0

    根據計算結果，確定了不同氣氛條件下cd _ （ 1 - x ） zn _ xte （ x = 0 . 05 ）晶體中佔主要地位的點缺陷和相關偽化學反應式的反應焓、反應熵及平衡常數，給出了兩溫區本徵退火的具體參數。
  15. We have studied the influence of growth parameters of buffer layer under large flux of reactant materials and found that parameters such as v / ratio, growth temperature and ammonia flux during annealing have evident influences on the growth of buffer layer, while other parameters like growth pressure, pressure during annealing and ramping rate show little influence

    在大源流量流下，研究了gan緩沖層各生長參數的影響規律，發現對緩沖層生長影響顯著的條件有生長比、生長溫度、退火時的氨氣流量。而緩沖層生長壓力、退火壓力及退火時間的影響相對較小。
  16. In experiments carried out under small reactant source flux, it was found that parameters such as v / ratio, growth pressure, thickness of buffer layer, ammonia flux during annealing and ramping rate have strong influence on the growth of buffer layer, while the influence of tmga flux and pressure during annealing can be omitted

    在小反應源氣流下，發現對緩沖層生長影響顯著的條件包括生長比，生長壓力，緩沖層厚度，退火時氨氣流量及退火速率。而ga源流量，退火壓力及的影響相對較小。
  17. The test results show that the grain sizes do not reduce further after 6 passes of ecap, the slip systems of ferrite is mainly belonging to { 110 } < 111 > and { 112 } < 111 > slip system family during the first and the second pass of the ecap with route c, and under the annealing conditions of 300 ~ 550 x lh, ultrafme grains are thermally stable

    研究發現，在c方式ecap變形中，各道次ecap變形細化程度不同， 1道次細化效果最大，隨后道次細化作用逐步減少，變形6道次為實驗用鋼的ecap晶粒細化的極限。鐵素體c方式ecap變形第1和第2道次的主要滑移系為{ 110 } < 111 >和{ 112 } < 111 > 。
  18. The main work in this thesis includes two contents as follow : 1 we have investigated the properties of ohmic contact between metal electrode ( al and ti / al electrode ) and n - gan dealed under different annealing conditions. by using xrd sims analytic methods and i - v measuremnet, we analysed the interface between metals and gan, and suggested that it is effect to decrease the value of the ohmic contact

    主要工作如下： 1 、研究了al單層及ti al雙層電極與n型si基gan和al _ 2o _ 3基gan在不同退火條件下的歐姆接觸情況，並用x射線衍射譜（ xrd ） ，二次離子質譜（ sims ）對界面固相反應進行了分析。
  19. The results indicates that superconducting mgb2 thin films can be prepared by hfcvd in a single - step with the maximum critical transition temperature tc of 36k ; the best critical transition temperature tc of thin films grown by hpcvd in a single - step is 34k. the optimal zero resistance temperature tco of thin films fabricated ex situ is 37 k by post - annealing of precursor b film at 800 for 1 h under high mg vapor pressure

    實驗結果表明，用hfcvd法在400原位制備了臨界溫度為36k的mgb2超導薄膜；用hpcvd法在700原位制備了臨界溫度為34k的mgb2超導薄膜；將300制備的前驅物b膜在mg蒸氣中800保溫1h非原位退火，制備了臨界溫度為37k的mgb2超導薄膜。
  20. Ohmic contacts on h2 - thermally - treated 6h - sic surface by evaporating aluminum without annealing have contact resistances of 8 10 - 3 - cm2 on room temperature and keep fairly good thermal stability under the temperature of 400. its ohmic properties do n ' t depend on the doping concentrations of the substrate, which enables us to form ohmic contacts on low dropped substrate especially on epitaxial layer

    通過氫氣處理6h - sic表面並鍍鋁后直接形成的歐姆接觸室溫比電阻率達到8 10 ~ （ - 3 ） ? cm ~ 2 ，溫度不超過400時該接觸具有較好的穩定性，其歐姆特性不依賴于襯底的摻雜濃度，是一種適宜在低摻雜襯底特別是sic外延片上制備歐姆接觸的有效方法。
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