upper bubble 中文意思是什麼

upper bubble 解釋
垂直度盤水準器
  • upper : adj 1 (更)上面的,上方的,上部的;較高的;上級的;(議會)上院的;(衣服)穿在外面的。2 上流的...
  • bubble : n 1 泡,水泡;氣泡;泡沫。2 幻想,妄想,泡影;欺詐性的投機事業。3 冒泡,起泡,沸騰(聲)。4 泡泡...
  1. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面:首次採用硅( 100 )襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子,通過退火處理成功制備了sige - oi新結構,即sige - simox工藝,證實了以45kev注入3 10 ~ ( 17 ) 7cm ~ ( - 2 )劑量的氧離子,隨后在氧化層的保護下經1250 , ar + 5 o _ 2氣氛的高溫退火( 5小時)過程,可以制備出sige - oi新型材料;實驗中觀察到退火過程中的ge損失現象,分析了其原因是ge揮發( ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛)和ge擴散( ge穿過離子注入形成的氧化埋層而進入si襯底中) ,其中ge擴散是主要原因;根據實驗結果及實驗中出現的問題,對下一步工作提出兩個改進的方案:一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路,二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分,從而部分解決sige
  2. Liquid drains from the upper surface of the bubble and it soon becomes unstable.

    液體從氣泡表面排出,氣泡很快變得不穩定。
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